Staff Person Publications

Publications Stanislav Vitanov

34 records

Publications in Scientific Journals

5.		Kuzmik, J., Vitanov, S., Dua, C., Carlin, J.-F., Ostermaier, C., Alexewicz, A., Strasser, G., Pogany, D., Gornik, E., Grandjean, N., Delage, S., Palankovski, V. (2012). Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors. Japanese Journal of Applied Physics, 51(5R), 054102. https://doi.org/10.1143/jjap.51.054102 (reposiTUm)

4.		Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rödle, T., Selberherr, S. (2012). Physics-Based Modeling of GaN HEMTs. IEEE Transactions on Electron Devices, 59(3), 685–693. https://doi.org/10.1109/ted.2011.2179118 (reposiTUm)

3.		Maroldt, S., Wiegner, D., Vitanov, S., Palankovski, V., Quay, R., Ambacher, O. (2010). Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz. IEICE Transactions on Electronics, E93-C(8), 1238–1244. (reposiTUm)

2.		Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2010). High-Temperature Modeling of AlGaN/GaN HEMTs. Solid-State Electronics, 54(10), 1105–1112. https://doi.org/10.1016/j.sse.2010.05.026 (reposiTUm)

1.		Vitanov, S., Palankovski, V. (2008). Normally-Off AlGaN/GaN HEMTs With InGaN Cap Layer: A Simulation Study. Solid-State Electronics, 52(11), 1791–1795. https://doi.org/10.1016/j.sse.2008.07.011 (reposiTUm)

Contributions to Books

1.		Vitanov, S., Nedjalkov, M., Palankovski, V. (2007). A Monte Carlo Model of Piezoelectric Scattering in GaN. In T. Boyanov, S. Dimova, K. Georgiev, G. Nikolov (Eds.), Numerical Methods and Applications (pp. 197–204). Springer-Verlag, Berlin-Heidelberg. https://doi.org/10.1007/978-3-540-70942-8_23 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

27.		Vitanov, S., Kuzmik, J., Palankovski, V. (2011). Normally-Off InAlN/GaN HEMTs With N<sup>++</Sup> GaN Cap Layer: A Simulation Study. In 2011 International Semiconductor Device Research Symposium (ISDRS), College Park, MD, USA. https://doi.org/10.1109/isdrs.2011.6135161 (reposiTUm)

26.		Aloise, G., Vitanov, S., Palankovski, V. (2011). Performance Study of Nitride-Based Gunn Diodes. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference, Expo - Nanotech 2011 (p. 4), Boston, USA. (reposiTUm)

25.		Vitanov, S., Kuzmik, J., Palankovski, V. (2011). Study of the Conduction Properties of the N++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs. In Annual Journal of Electronics (pp. 113–116), Sozopol, Bulgaria. (reposiTUm)

24.		Aloise, G., Vitanov, S., Palankovski, V. (2011). Temperature Dependence of the Transport Properties of InN. In Official Proceedings of Microtherm 2011 (p. 6), Lodz, Poland. (reposiTUm)

23.		Vitanov, S., Palankovski, V. (2010). Electron Mobility Models for III-Nitrides. In Annual Journal of Electronics (pp. 18–21), Sozopol. (reposiTUm)

22.		Vitanov, S., Palankovski, V. (2010). High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs. In Proceedings of the Junior Scientist Conference (pp. 59–60), Vienna, Austria. (reposiTUm)

21.		Vitanov, S., Palankovski, V., Selberherr, S. (2010). Hydrodynamic Models for GaN-Based HEMTs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (p. 4), Montreux, Austria. (reposiTUm)

20.		Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2010). Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (p. 4), Montreux, Austria. (reposiTUm)

19.		Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2009). A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs With Recessed Gates. In HETECH 2009 Book of Abstracts (pp. 109–110), Smolenice Castle, Slovakia, Austria. (reposiTUm)

18.		Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2009). High-Temperature Modeling of AlGaN/GaN HEMTs. In 2009 International Semiconductor Device Research Symposium, College Park, MD, USA. https://doi.org/10.1109/isdrs.2009.5378300 (reposiTUm)

17.		Vitanov, S., Palankovski, V. (2009). Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs. In Annual Journal of Electronics (pp. 144–147), Sozopol. (reposiTUm)

16.		Vitanov, S., Palankovski, V. (2008). Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation. In Junior Scientist Conference Proceedings (pp. 221–222), Vienna, Austria. (reposiTUm)

15.		Vitanov, S., Palankovski, V. (2008). Monte Carlo Study of Transport Properties of InN. In Springer Proceedings in Physics (pp. 97–100). https://doi.org/10.1007/978-1-4020-8425-6_24 (reposiTUm)

14.		Vitanov, S., Palankovski, V. (2008). Simulation of AlGaN/GaN HEMTs With InGaN Cap Layer. In The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4 (pp. 67–70), Sozopol. (reposiTUm)

13.		Vitanov, S., Palankovski, V., Pozzovivo, G., Kuzmik, J., Quay, R. (2008). Systematical Study of InAlN/GaN Devices by Numerical Simulation. In HETECH 2008 Book of Abstracts (pp. 159–160), Smolenice Castle, Slovakia, Austria. (reposiTUm)

12.		Vitanov, S., Vitanov, P., Palankovski, V. (2008). Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon. In 23^rd European Photovoltaic Solar Energy Conference (pp. 1743–1745), Valencia. (reposiTUm)

11.		Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S. (2007). Hydrodynamic Modeling of AlGaN/GaN HEMTs. In Simulation of Semiconductor Processes and Devices 2007 (pp. 273–276), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_65 (reposiTUm)

10.		Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2007). Modeling of Electron Transport in GaN-Based Materials and Devices. In AIP Conference Proceedings, Vol. 893 (pp. 1399–1400). (reposiTUm)

9.		Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2007). Modeling of Electron Transport in GaN-based Materials and Devices. In 28^th International Conference on the Physics of Semiconductors (p. 244), Vienna, Austria, Austria. (reposiTUm)

8.		Vitanov, S., Palankovski, V. (2007). Monte Carlo Study of Transport Properties of InN. In The 13^th International Conference on Narrow Gap Semiconductors (p. 99), Guildford. (reposiTUm)

7.		Vitanov, S., Palankovski, V. (2007). Normally-Off AlGaN/GaN HEMTs With InGaN Cap Layer: A Theoretical Study. In 2007 International Semiconductor Device Research Symposium, College Park, MD, USA. https://doi.org/10.1109/isdrs.2007.4422390 (reposiTUm)

6.		Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S. (2007). Predictive Simulation of AlGaN/GaN HEMTs. In 2007 IEEE Compound Semiconductor Integrated Circuits Symposium, San Antonio. https://doi.org/10.1109/csics07.2007.31 (reposiTUm)

5.		Vitanov, S., Nedjalkov, M., Palankovski, V. (2006). A Monte Carlo Model of Piezoelectric Scattering in GaN. In Sixth International Conference on Numerical Methods and Applications Abstracts (p. B-75), Borovets. (reposiTUm)

4.		Palankovski, V., Vitanov, S., Quay, R. (2006). Field-Plate Optimization of AlGaN/GaN HEMTs. In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, San Antonio. https://doi.org/10.1109/csics.2006.319926 (reposiTUm)

3.		Vitanov, P., LeQuang, N., Harizanova, A., Nichiporuk, O., Ivanova, T., Vitanov, S., Palankovski, V. (2006). New Surface Passivation and Local Contacts on the Backside for Thin Mc-Si Solar Cells. In World Renewable Energy Congress IX Book of Abstracts (p. 564), Firenze. (reposiTUm)

2.		Vitanov, P., Vitanov, S., Palankovski, V. (2006). Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells. In 21st European Photovoltaic Solar Energy Conference (pp. 1475–1478), Dresden. (reposiTUm)

1.		Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2006). Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs. In TARGET Days 2006 Book of Proceedings (pp. 81–84), Frascati. (reposiTUm)

Doctor's Theses (authored and supervised)

1.		Vitanov, S. (2010). Simulation of High Electron Mobility Transistors Technische Universität Wien. https://doi.org/10.34726/hss.2010.21514 (reposiTUm)