Staff Person Publications

Publications Yannick Wimmer

34 records

Publications in Scientific Journals

9.		Goes, W., Wimmer, Y., El-Sayed, A.-M., Rzepa, G., Jech, M., Shluger, A. L., Grasser, T. (2018). Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence. Microelectronics Reliability, 87, 286–320. https://doi.org/10.1016/j.microrel.2017.12.021 (reposiTUm)

8.		Wimmer, Y., El-Sayed, A.-M., Gös, W., Grasser, T., Shluger, A. L. (2016). Role of Hydrogen in Volatile Behaviour of Defects in SiO₂-based Electronic Devices. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, 472(2190). https://doi.org/10.1098/rspa.2016.0009 (reposiTUm)

7.		Sharma, P., Tyaginov, S., Jech, M., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2016). The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in N- And P-Channel LDMOS Devices. Solid-State Electronics, 115, 185–191. https://doi.org/10.1016/j.sse.2015.08.014 (reposiTUm)

6.		Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2015). Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs. Microelectronics Reliability, 55(9–10), 1427–1432. https://doi.org/10.1016/j.microrel.2015.06.021 (reposiTUm)

5.		Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J. M., Minixhofer, R., Ceric, H., Grasser, T. (2015). Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation. IEEE Transactions on Electron Devices, 62(6), 1811–1818. https://doi.org/10.1109/ted.2015.2421282 (reposiTUm)

4.		Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Kaczer, B., Grasser, T. (2015). On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation. Japanese Journal of Applied Physics, 54(4S), 04DC18. https://doi.org/10.7567/jjap.54.04dc18 (reposiTUm)

3.		El-Sayed, A.-M., Wimmer, Y., Goes, W., Grasser, T., Afanas’ev, V. V., Shluger, A. L. (2015). Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide. Physical Review B, 92(014107). https://doi.org/10.1103/physrevb.92.014107 (reposiTUm)

2.		Tyaginov, S., Wimmer, Y., Grasser, T. (2014). Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment. Facta Universitatis - Series: Electronics and Energetics, 27(4), 479–508. https://doi.org/10.2298/fuee1404479t (reposiTUm)

1.		Bina, M., Tyaginov, S., Franco, J., Rupp, K., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T. (2014). Predictive Hot-Carrier Modeling of N-Channel MOSFETs. IEEE Transactions on Electron Devices, 61(9), 3103–3110. https://doi.org/10.1109/ted.2014.2340575 (reposiTUm)

Contributions to Books

1.		Waldhoer, D., El-Sayed, A.-M. B., Wimmer, Y., Waltl, M., Grasser, T. (2020). Atomistic Modeling of Oxide Defects. In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 609–648). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_18 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

18.		Waldhoer, D., Wimmer, Y., El-Sayed, A., Goes, W., Waltl, M., Grasser, T. (2019). Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects. In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989889 (reposiTUm)

17.		Grasser, T., Waltl, M., Rzepa, G., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Reisinger, H., Kaczer, B. (2016). The “permanent” Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing. In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574504 (reposiTUm)

16.		Wimmer, Y., Goes, W., El-Sayed, A., Shluger, A., Grasser, T. (2015). A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide. In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292254 (reposiTUm)

15.		Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015). A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme. In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063763 (reposiTUm)

14.		Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015). Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs. In Abstracts of the 26^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (p. 60), Maastricht. (reposiTUm)

13.		Grasser, T., Waltl, M., Wimmer, Y., Goes, W., Kosik, R., Rzepa, G., Reisinger, H., Pobegen, G., El-Sayed, A., Shluger, A., Kaczer, B. (2015). Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes. In 2015 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2015.7409739 (reposiTUm)

12.		Wimmer, Y., Gös, W., El-Sayed, A., Shluger, A., Grasser, T. (2015). On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 97–98), Urbana-Champaign, IL, USA. (reposiTUm)

11.		Grasser, T., Waltl, M., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Kaczer, B. (2015). On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation. In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112739 (reposiTUm)

10.		Kaczer, B., Franco, J., Cho, M., Grasser, T., Roussel, P., Tyaginov, S., Bina, M., Wimmer, Y., Procel, L., Trojman, L., Crupi, F., Pitner, G., Putcha, V., Weckx, P., Bury, E., Ji, Z., De Keersgieter, A., Chiarella, T., Horiguchi, N., Groeseneken, G., Thean, A. (2015). Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs. In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112706 (reposiTUm)

9.		Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015). Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China. https://doi.org/10.1109/ispsd.2015.7123471 (reposiTUm)

8.		Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T. (2014). A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs. In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931570 (reposiTUm)

7.		Goes, W., Waltl, M., Wimmer, Y., Rzepa, G., Grasser, T. (2014). Advanced Modeling of Charge Trapping: RTN, 1/F Noise, SILC, and BTI. In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931567 (reposiTUm)

6.		Rupp, K., Bina, M., Wimmer, Y., Jungel, A., Grasser, T. (2014). Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation. In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931639 (reposiTUm)

5.		Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Kaczer, B., Ceric, H., Grasser, T. (2014). Dominant Mechanisms of Hot-Carrier Degradation in Short- And Long-Channel Transistors. In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049512 (reposiTUm)

4.		Rudolf, F., Wimmer, Y., Weinbub, J., Rupp, K., Selberherr, S. (2014). Mesh Generation Using Dynamic Sizing Functions. In Proc. 4th European Seminar on Computing (p. 191), Pilsen, Czech Republic. (reposiTUm)

3.		Grasser, T., Goes, W., Wimmer, Y., Schanovsky, F., Rzepa, G., Waltl, M., Rott, K., Reisinger, H., Afanas'ev, V., Stesmans, A., El-Sayed, A., Shluger, A. (2014). On the Microscopic Structure of Hole Traps in pMOSFETs. In 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2014.7047093 (reposiTUm)

2.		Wimmer, Y., Tyaginov, S., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Minixhofer, R., Ceric, H., Grasser, T. (2014). Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors. In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049511 (reposiTUm)

1.		Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Wimmer, Y., Kaczer, B., Grasser, T. (2013). Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 98–101), S. Lake Tahoe. (reposiTUm)

Doctor's Theses (authored and supervised)

1.		Wimmer, Y. (2017). Hydrogen Related Defects in Amorphous SiO2 and the Negative Bias Temperature Instability Technische Universität Wien. https://doi.org/10.34726/hss.2017.51306 (reposiTUm)

Diploma and Master Theses (authored and supervised)

5.		D. Waldhör: "Potential Energy Surface Approximations for Nonradiative-Multiphonon Charge Transitions in Oxide Defects"; Supervisor: T. Grasser, Y. Wimmer; Institut für Mikroelektronik, 2018; final examination: 2018-10-05.

4.		Waldhör, D. (2018). Potential Energy Surface Approximations for Nonradiative Multiphonon Charge Transitions in Oxide Defects Technische Universität Wien. https://doi.org/10.34726/hss.2018.58665 (reposiTUm)

3.		M. Bellini: "Ab Initio Study of Hexagonal Boron Nitride and Molybdenum Disulfide"; Supervisor: T. Grasser, M. Jech, Y. Wimmer; Institut für Mikroelektronik, 2017; final examination: 2017-03-09.

2.		Y. Wimmer: "Untersuchung neuartiger SiNx-Antireflexschichten für Silizium-Solarzellen"; Supervisor: J. Summhammer; Atominstitut, 2012; final examination: 2012-06-01.

1.		Wimmer, Y. B. (2012). Untersuchung Neuartiger SiNx-Antireflexschichten Für Siliziumsolarzellen Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-46692 (reposiTUm)