Our papers titled Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs and Parameter–Free Modeling of Hot–Carrier Degradation have been accepted at the 65th International Electron Devices Meeting (IEDM). The 1st work is co-authored by Christian, Tibor, Michael and our industrial partners from Global TCAD Solutions, KAI, Infineon and IMEC will be presented by Christian while the 2nd one which is a collaboration of Markus, Michael, Tibor and our colleagues from IMEC will be presented by Markus.
The event will take place in December 7-11, 2019 Hilton San Francisco and we wish our colleagues a successful IEDM 2019!
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Michael Waltl | Single-Defect Spectroscopy in Semiconductor Devices
Christian Doppler Laboratory at the Institue for Microelectronics