|Worked for IµE from 01-03-2012 to 30-11-2017.|
|Biography (as of 30-11-2017):|
Thomas Windbacher was born in Mödling, Austria, in 1979. He studied physics at the Technische Universität Wien, where he received the degree of Diplomingenieur in October 2006. He joined the Institute for Microelectronics in October 2006 and finished his doctoral degree on engineering gate stacks for field-effect transistors in 2010. From 2010 until the beginning of 2012 he worked as a patent attorney candidate in Leoben. In March 2012 he rejoined the Institute for Microelectronics, where he currently works on the modeling and simulation of magnetic device structures.