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Philippe Dollfus

Biography

Philippe Dollfus received the Ph. D. degree in sciences from the University of Paris-Sud, Orsay, France, in 1989. He joined the Centre National de la Recherche Scientifique (CNRS) in 1989 as a researcher at the Institut d’Electronique Fondamentale (IEF), Orsay, France. He currently heads a group of computational nanoelectronics. He has been involved in the development of the Monte Carlo technique for transport and device simulation. His original research interests were focused on transport physics in III-V and IV-IV transistors, transient radiation effects in SOI MOSFETs and spintronics in semiconductor structures. His research activity currently includes the physics and modelling of quantum transport in advanced nanodevices, including multi-gate nano-MOSFET, quantum dots, resonant tunnelling diodes, quantum wires, carbon nanotubes and graphene. He is member of the editorial board of Journal of Computational Electronics.

Wigner-specific research

[1] Querlioz, Damien and Dollfus, Philippe: “The Wigner Monte-Carlo Method for Nanoelectronic Devices: A Particle Description of Quantum Transport and Decoherence”, John Wiley & Sons, 2013.

[2] Schwaha, Philipp and Querlioz, Damien and Dollfus, Philippe and Saint-Martin, Jerome and Nedjalkov, Mihail and Selberherr, Siegfried: “Decoherence effects in the Wigner function formalism”, Journal of Computational Electronics, Vol.12, No.3, p.388–396, 2013.

[3] Querlioz, Damien and Saint-Martin, Jerome and Dollfus, Philippe: “Implementation of the Wigner-Boltzmann transport equation within particle Monte Carlo simulation”, Journal of Computational Electronics, Vol.9, No.3-4, p.224–231, 2010.

[4] Querlioz, Damien and Nguyen, Huu-Nha and Saint-Martin, Jerome and Bournel, Arnaud and Galdin-Retailleau, Sylvie and Dollfus, Philippe: “Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport”, Journal of Computational Electronics, Vol.8, No.3-4, p.324–335, 2009.

[5] Nguyen, Huu-Nha and Querlioz, Damien and Galdin-Retailleau, Sylvie and Bournel, Arnaud and Dollfus, Philippe: “Wigner Monte Carlo simulation of CNTFET: Comparison between semi-classical and quantum transport”, Proc. IWCE, p.257–260, 2009.

[6] Querlioz, Damien and Saint-Martin, Jerome and Bournel, Arnaud and Dollfus, Philippe: “Wigner Monte Carlo simulation of phonon-induced electron decoherence in semiconductor nanodevices”, Physical Review B, Vol.78, No.16, p.165306, 2008.

[7] Querlioz, Damien and Saint-Martin, Jerome and Do, V-N and Bournel, Arnaud and Dollfus, Philippe: “A study of quantum transport in end-of-roadmap DG-MOSFETs using a fully self-consistent Wigner Monte Carlo approach”, Nanotechnology, IEEE Transactions on, Vol.5, No.6, p.737–744, 2006.

[8] Querlioz, Damien and Dollfus, Philippe and Do, Van-Nam and Bournel, Arnaud and others: “An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs”, Journal of Computational Electronics, Vol.5, No.4, p.443–446, 2006.

Affiliation(s)

  • Research Director, CNRS, Université Paris-Sud, France

Email

Additional information

dollfus_philippe.txt · Last modified: 2015/07/22 12:02 by weinbub