The Institute for Microelectronics, TU Wien is a research institute focused on the reliability of circuit components (especially transistors). In addition to conventional Si transistors, the behavior of SiC devices designed for high-power applications and modern devices employing 2D materials are also at the center of interest. In the broad field of reliability of microelectronic components, the Institute for Microelectronics is most outstanding by providing a strong experimental, simulation and modelling expertise. The prototype devices which are provided by our partners are typically measured employing the modern electronics laboratory, and afterwards the experimental data are explained with the aid of physical computer simulations. For the characterization of transistors, the Institute for Microelectronics has a modern laboratory equipped with commercial and custom-built measurement instruments. The scientists at the Institute for Microelectronics are also actively working on the continuous development and improvement of physics-based defect models, in order to accurately explain the real behavior of the transistors. The models employed are implemented into elaborate 2D/3D device simulator MinimosNT, but are also available in the compact 1D reliability simulator, Comphy. Another essential research focus of the Institute for Microelectronics is put on density function theory simulations to confirm the physical plausibility of the model parameters.
Within the course of this work, the extensive knowledge, models and methods developed for single transistors should be propagated to the circuit simulation level. The circuit simulations will be performed using a toolset provided by Cadence. As behavioral models are required to describe the circuit elements, the implementation should be performed in Verilog-A. Starting from linking Comphy (a Python based tool) to Verilog-A, the reliability models should be successively implemented in Verilog-A, to ensure high computational efficiency for complex circuit simulations. The final goal of this work is to investigate basic electronic circuits (gates, ring oscillators) but also complex electronic applications (SRAM, OPAMP, etc.) considering the physical based models.
For this position a considerable interest and existing in-depth knowledge in one or more of the following areas are advantageous to complement our team:
As a teaching institution knowledge transfer and close cooperation with students are of high importance. The applicant will have the opportunity to work with students in a Master’s level course and to supervise Master’s and Bachelor theses. The applicant is expected to be a team player, eager, proactive, and self-reliant. The candidate is further required to present research findings at international conferences (for which funding is available) as well as to publish in international journals. The workplace will be located in the heart of Vienna at the Institute for Microelectronics, TU Wien.
The position is intended for PhD Students/Research Assistant. Applications of post-doctoral researchers may also be considered for this position, if an outstanding working and research experience in this field can be provided.
This position is subject to the collective agreement of TU Wien for workers and employees, employment group B1 (40 hours/week). The monthly salary is paid 14 times and the gross annual salary is approximately EUR 41 100.
From October 1st, 2020
Please provide a detailed CV, your collective certificates, your Master’s thesis or PhD thesis (weblink or PDF), and a single-page motivation letter (discussing relevant previous experience related to the desired skills and experience).
Please submit your application to firstname.lastname@example.org
The position will remain open until filled