Our manuscripts titled Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations and Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications have been accepted at the International Conference on Simulation of Semiconductor Processes and Devices. The conference will take place in September 4-6, 2019 in Udine, Italy.
Our manuscripts titled Parallelized Construction of Extension Velocities for the Level-Set Method has been accepted at the Internation Conference on Parallel Processing and Applied Mathematics. The conference will take place in September 8, 2019 in Bialystok, Poland.
Our manuscripts titled Simulation of the Effect of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics and A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing have been accepted by IEEE Transactions on Electron Devices Journal and by Advances in Computational Mathematics Journal, respectively.
Our manuscripts titled A Flexible Shared-Memory Parallel Mesh Adaptation Framework has been accepted at the 19th International Conference on Computational Science and its Applications. The conference will take place in July 1-4, 2019 in Saint Petersburg, Russia.
Our manuscript titled An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching has been accepted for oral presentation at the 6th International Atomic Layer Etching Workshop (ALE2019). The conference will take place July 21-24, 2019 in Bellevue, WA, USA
Vito’s paper “Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide” has been accepted for publication in the Journal of Applied Physics.
Our papers, both spearheaded by Vito, “ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation” and “Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide” have been accepted for publication in the Journal of Physical Chemistry A and in the IEEE Transactions on Electron Devices, respectively.
Our manuscript titled Using Graph Partitioning and Coloring for Flexible Coarse-Grained
Shared-Memory Parallel Mesh Adaptation has been accepted for presentation as a research note at the International Meshing Roundtable (IMR). The conference will take place September 18-21, 2017 in Barcelona, Spain.
Our papers entitled Accelerated Direct Flux Calculations
Using an Adaptively Refined Icosahedron and An Empirical Model for Electrical Activation of
Phosphorus and Nitrogen Implanted Silicon Carbide have been accepted for presentation at the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). The conference will take place September 7-9, 2017 in Kamakura, Japan.
Our manuscript titled Evaluation of the Shared-Memory Parallel Fast Marching Method for
Re-Distancing Problems has been accepted for presentation as a PhD showcase at the International Conference on Computational Science and Its Applications (ICCSA) 2017. The conference will take place July 3-6, 2017 in Trieste, Italy.