Rudolf Strasser, and
Institute for Microelectronics, TU Vienna, Gußhausstraße 27-29, A-1040 Vienna, Austria
Phone: +43/1/58801-5239, FAX: +43/1/5059224
E-mail: firstname.lastname@example.org, WWW: http://www.iue.tuwien.ac.at
Abstract.- With shrinking device dimensions and decreasing product-development cycles, fully-automated TCAD analysis of complete semiconductor processes and devices is becoming increasingly important. We present a programmable simulation environment for VLSI technology analysis, focusing on high-level tasks including response surface modeling (RSM) and optimization. Based on process and device simulation capabilities with heterogeneous simulation tools, split-lot experiments can be defined for fabrication process flows and simulation sequences. The parallel and distributed execution of independent split tree branches allow a fast computation of large-scale experiments. A persistent run data base keeps all simulation results and prevents unnecessary re-computations. Special emphasis has been put on establishing in an object-oriented fashion a uniform and easy-to-use interface for applications and extensions supplied by the user. The combination of a comfortable, intuitive visual user interface with the flexibility and versatility of a high-level programming language for TCAD applications results in a powerful tool for TCAD integration, development, and production use.