Simulation of Semiconductor Processes and Devices 2007

• Editor: Grasser, Tibor; Selberherr, Siegfried
• Published: 2007, 460 pages, 450 figures
• ISBN: 978-3-211-72860-4
• Information from Amazon

Abstract:
This volume contains the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. This volume covers device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation. It also covers user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation as well as simulation of such devices as microsensor and optoelectronics devices and benchmarking, calibration, and verification of simulators.