T_SI - Sillicon Thickness
T_OX - Oxide Thickness
W_FIN - Fin Width
H_FIN - Fin Height
L_G - Gate Lenght
All model-parameters are represented in milimeters.

Type: MOSFET with T_OX 0,9 nm and L_G 26 nm¹⁾
Source: Impact of Transistor Architecture

Type: Single-Gate with T_OX 1,2 nm and L_G 60 nm
Source: Advanced Depleted-Substrate Transistors

The main idea of a Double Gate MOSFET is to control the Si channel very efficiently by choosing the Si channel
width to be very small and by applying a gate contact to both sides of the channel. This concept helps to suppress
short channel effects and leads to higher currents as compared with a MOSFET having only one gate.

Type: Double-Gate FinFET with T_OX 1,2 nm, W_FIN 40 nm, H_FIN 50 nm and L_G 60 nm
Source: Advanced Depleted-Substrate Transistors

Type: Double-Gate FinFET with T_OX 1,2 nm, W_FIN 12 nm, H_FIN 24 nm and L_G 22 nm
Source: Types of multigate MOSFET

Type: Double-Gate MOSFET with T_OX 1,5 nm and L_G 25 nm
Source: Double-Gate MOSFET

Type: Double-Gate MOSFET with T_OX 2 nm and L_G 20 nm
Source: Double-Gate MOSFET

Type: Double-Gate MOSFET with T_OX 1 nm and L_G 5,6 nm
Source: Nano Devices (SILVACO)

Type: Double-Gate with asymmetric oxide thickness with T_OX-Top 2 nm, T_OX-Bottom 3 nm and L_G 20 nm
Source: Double-Gate SOI Devices

In a tri-gate transistor, the gate surrounds the channel on all three sides and has much better control so that all the charge below
the transistor is removed (i.e. fully depleted). The stronger control decreases sub-threshold leakage, so the transistor is much better
at shutting off. This reduces (or eliminates) dopant variability as well, because less (or no) doping is needed to control the channel.

Type: Tri-Gate with T_OX 1 nm and L_G 5,6 nm
Source: Nano Devices (SILVACO)

Type: Tri-Gate with T_OX 1,2 nm, W_FIN 12 nm, H_FIN 15 nm and L_G 22 nm
Source: Types of multigate MOSFET

Type: Tri-Gate with T_OX 1,2 nm, W_FIN 71,4 nm, H_FIN 41,7 nm and L_G 60 nm
Source: Advanced Depleted-Substrate Transistors

Type: Tri-Gate with T_OX 1,2 nm, W_FIN 55 nm, H_FIN 36 nm and L_G 60 nm
Source: Advanced Depleted-Substrate Transistors

Type: Bulk Tri-Gate with T_OX 1,2 nm, W_FIN 12 nm, H_FIN 15 nm and L_G 22 nm
Source: Types of multigate MOSFET

Type: Bulk Tri-Gate with T_OX 0.85 nm, W_FIN 8 nm, Tapering Angle of 84° and L_G 24 nm
Source: Impact of Transistor Architecture

Gate-all-around FETs are similar in concept to FinFETs except
that the gate material surrounds the channel region on all sides.

Type: All-Around-Gate with T_OX 1 nm and L_G 5,6 nm
Source: Nano Devices (SILVACO)

Type: All-Around-Gate with T_OX 1,2 nm, W_FIN 12 nm, H_FIN 15 nm and L_G 22 nm
Source: Types of multigate MOSFET

Type: Four-Gate with T_OX 1 nm and L_G 5,6 nm
Source: Nano Devices (SILVACO)

FlexFET is a SOI IDG-CMOS technology with a damascene metal top gate
and an implanted JFET bottom gate that are self-aligned in a gate trench.

Type: FlexFET with T_SI 4 nm, T_OX 11 nm and L_G 32 nm
Source: Design of a 32nm Independently-Double-Gated FlexFET SOI Transistor

Type: Omega-Gate with T_OX 1,2 nm, W_FIN 10 nm, H_FIN 12 nm and L_G 22 nm
Source: Types of multigate MOSFET

Type: Pi-Gate with T_OX 1,2 nm, W_FIN 10 nm, H_FIN 12 nm and L_G 22 nm
Source: Types of multigate MOSFET

The following tutorials have been created using the screen-recording software Kazam.