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cad_models [2014/10/25 18:55] resutik [MOSFET and Single-Gate] |
cad_models [2014/12/02 01:09] (current) resutik |
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**Type:** **Double-Gate FinFET** with **T<sub>OX</sub>** 1,2 nm, **W<sub>FIN</sub>** 40 nm, **H<sub>FIN</sub>** 50 nm and **L<sub>G</sub>** 60 nm\\ | **Type:** **Double-Gate FinFET** with **T<sub>OX</sub>** 1,2 nm, **W<sub>FIN</sub>** 40 nm, **H<sub>FIN</sub>** 50 nm and **L<sub>G</sub>** 60 nm\\ | ||
**Source:** [[http://internationalsematech.org/meetings/archives/reliability/20021028/09_Chau_Depleted_Substrate.pdf|Advanced Depleted-Substrate Transistors]] | **Source:** [[http://internationalsematech.org/meetings/archives/reliability/20021028/09_Chau_Depleted_Substrate.pdf|Advanced Depleted-Substrate Transistors]] | ||
+ | {{:double_gate_finfet_me.jpg?direct&200 |Double_Gate_FinFET_meshed}}\\ | ||
+ | {{:double_gate_finfet_sim.jpg?direct&200 |Double_Gate_FinFET_simulated}}\\ | ||
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**Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | **Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | ||
{{:double_gate_finfet2_meshed.jpg?200 |Double_Gate_FinFET2_meshed}}\\ | {{:double_gate_finfet2_meshed.jpg?200 |Double_Gate_FinFET2_meshed}}\\ | ||
- | {{:double_gate_finfet2_simulated.jpg?200 |Double_Gate_FinFET2_simulated_without_contacts}}\\ | + | {{:double_gate_finfet2_simulated.jpg?200 |Double_Gate_FinFET2_simulated}}\\ |
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**Source:** [[http://www.nextnano.de/nextnano3/tutorial/2Dtutorial_DGMOS_5nm.htm|Double-Gate MOSFET]] | **Source:** [[http://www.nextnano.de/nextnano3/tutorial/2Dtutorial_DGMOS_5nm.htm|Double-Gate MOSFET]] | ||
{{:double_gate_mosfet_meshed.jpg?200 |Double_Gate_MOSFET_meshed}}\\ | {{:double_gate_mosfet_meshed.jpg?200 |Double_Gate_MOSFET_meshed}}\\ | ||
- | {{:double_gate_mosfet_simulated.jpg?200 |Double_Gate_MOSFET_simulated_without_contacts}}\\ | + | {{:double_gate_mosfet_simulated.jpg?200 |Double_Gate_MOSFET_simulated}}\\ |
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**Source:** [[http://www.nextnano.com/nextnano3/tutorial/2Dtutorial1.htm|Double-Gate MOSFET]] | **Source:** [[http://www.nextnano.com/nextnano3/tutorial/2Dtutorial1.htm|Double-Gate MOSFET]] | ||
{{:double_gate_mosfet2_meshed.jpg?200 |Double_Gate_MOSFET2_meshed}}\\ | {{:double_gate_mosfet2_meshed.jpg?200 |Double_Gate_MOSFET2_meshed}}\\ | ||
- | {{:double_gate_mosfet2_simulated.jpg?200 |Double_Gate_MOSFET2_simulated_without_contacts}}\\ | + | {{:double_gate_mosfet2_simulated.jpg?200 |Double_Gate_MOSFET2_simulated}}\\ |
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**Source:** [[http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2006/may/a2/a2.html|Nano Devices (SILVACO)]] | **Source:** [[http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2006/may/a2/a2.html|Nano Devices (SILVACO)]] | ||
{{:double_gate_mosfet3_meshed.jpg?200 |Double_Gate_MOSFET3_meshed}}\\ | {{:double_gate_mosfet3_meshed.jpg?200 |Double_Gate_MOSFET3_meshed}}\\ | ||
- | {{:double_gate_mosfet3_simulated.jpg?200 |Double_Gate_MOSFET3_simulated_without_contacts}}\\ | + | {{:double_gate_mosfet3_simulated.jpg?200 |Double_Gate_MOSFET3_simulated}}\\ |
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**Type:** **Double-Gate with asymmetric oxide thickness** with **T<sub>OX-Top</sub>** 2 nm, **T<sub>OX-Bottom</sub>** 3 nm and **L<sub>G</sub>** 20 nm \\ | **Type:** **Double-Gate with asymmetric oxide thickness** with **T<sub>OX-Top</sub>** 2 nm, **T<sub>OX-Bottom</sub>** 3 nm and **L<sub>G</sub>** 20 nm \\ | ||
**Source:** [[http://online.sfsu.edu/mahmoodi/papers/paper_C38.pdf|Double-Gate SOI Devices]] | **Source:** [[http://online.sfsu.edu/mahmoodi/papers/paper_C38.pdf|Double-Gate SOI Devices]] | ||
- | {{:double_gate_mosfet_with_asymmetrick_oxide_thickness_meshed.jpg?200 |Double_Gate_MOSFET_with_asymmetric_oxide_thickness_meshed}}\\ | + | {{:double_gate_mosfet_with_asymmetrick_oxide_thickness_meshed.jpg?200 |Double_Gate_MOSFET_asymmetric_meshed}}\\ |
- | {{:double_gate_mosfet_with_asymmetric_oxide_thickness_simulated.jpg?200 |Double_Gate_MOSFET_with_asymmetric_oxide_thickness_simulated_without_contacts}}\\ | + | {{:double_gate_mosfet_with_asymmetric_oxide_thickness_simulated.jpg?200 |Double_Gate_MOSFET_asymmetric_simulated}}\\ |
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**Source:** [[http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2006/may/a2/a2.html|Nano Devices (SILVACO)]] | **Source:** [[http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2006/may/a2/a2.html|Nano Devices (SILVACO)]] | ||
{{:tri_gate2_meshed.jpg?200 |Tri_Gate2_meshed}}\\ | {{:tri_gate2_meshed.jpg?200 |Tri_Gate2_meshed}}\\ | ||
- | {{:tri_gate2_simulated.jpg?200 |Tri_Gate2_simulated_without_contacts}}\\ | + | {{:tri_gate2_simulated.jpg?200 |Tri_Gate2_simulated}}\\ |
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**Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | **Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | ||
{{:tri_gate3_meshed.jpg?200 |Tri_Gate3_meshed}}\\ | {{:tri_gate3_meshed.jpg?200 |Tri_Gate3_meshed}}\\ | ||
- | {{:tri_gate3_simulated.jpg?200 |Tri_Gate3_simulated_without_contacts}}\\ | + | {{:tri_gate3_simulated.jpg?200 |Tri_Gate3_simulated}}\\ |
\\ \\ \\ \\ \\ \\ | \\ \\ \\ \\ \\ \\ | ||
- | {{:tri_gate4.jpeg?200 |}} | + | {{:tri_gate4.jpeg?200 |Tri_Gate4}} |
**Type:** **Tri-Gate** with **T<sub>OX</sub>** 1,2 nm, **W<sub>FIN</sub>** 71,4 nm, **H<sub>FIN</sub>** 41,7 nm and **L<sub>G</sub>** 60 nm\\ | **Type:** **Tri-Gate** with **T<sub>OX</sub>** 1,2 nm, **W<sub>FIN</sub>** 71,4 nm, **H<sub>FIN</sub>** 41,7 nm and **L<sub>G</sub>** 60 nm\\ | ||
**Source:** [[http://internationalsematech.org/meetings/archives/reliability/20021028/09_Chau_Depleted_Substrate.pdf|Advanced Depleted-Substrate Transistors]] | **Source:** [[http://internationalsematech.org/meetings/archives/reliability/20021028/09_Chau_Depleted_Substrate.pdf|Advanced Depleted-Substrate Transistors]] | ||
+ | {{:tri_gate4_me.jpg?direct&200 |Tri_Gate4_meshed}}\\ | ||
+ | {{:tri_gate4_sim.jpg?direct&200 |Tri_Gate4_simulated}}\\ | ||
\\ \\ \\ \\ \\ \\ | \\ \\ \\ \\ \\ \\ | ||
- | {{:tri_gate5.jpg?200 |}} | + | {{:tri_gate5.jpg?200 |Tri_Gate5}} |
**Type:** **Tri-Gate** with **T<sub>OX</sub>** 1,2 nm, **W<sub>FIN</sub>** 55 nm, **H<sub>FIN</sub>** 36 nm and **L<sub>G</sub>** 60 nm\\ | **Type:** **Tri-Gate** with **T<sub>OX</sub>** 1,2 nm, **W<sub>FIN</sub>** 55 nm, **H<sub>FIN</sub>** 36 nm and **L<sub>G</sub>** 60 nm\\ | ||
**Source:** [[http://internationalsematech.org/meetings/archives/reliability/20021028/09_Chau_Depleted_Substrate.pdf|Advanced Depleted-Substrate Transistors]] | **Source:** [[http://internationalsematech.org/meetings/archives/reliability/20021028/09_Chau_Depleted_Substrate.pdf|Advanced Depleted-Substrate Transistors]] | ||
+ | {{:tri_gate5_me.jpg?direct&200 |Tri_Gate5_meshed}}\\ | ||
+ | {{:tri_gate5_sim.jpg?direct&200 |Tri_Gate5_simulated}}\\ | ||
\\ \\ \\ \\ \\ \\ | \\ \\ \\ \\ \\ \\ | ||
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**Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | **Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | ||
{{:bulk_tri_gate_meshed.jpg?200 |Bulk_Tri_Gate_meshed}}\\ | {{:bulk_tri_gate_meshed.jpg?200 |Bulk_Tri_Gate_meshed}}\\ | ||
- | {{:bulk_tri_gate_simulated.jpg?200 |Bulk_Tri_Gate_simulated_without_contacts}}\\ | + | {{:bulk_tri_gate_simulated.jpg?200 |Bulk_Tri_Gate_simulated}}\\ |
\\ \\ \\ \\ \\ \\ | \\ \\ \\ \\ \\ \\ | ||
- | {{:bulk_tri_gate2.jpeg?200 |}} | + | {{:bulk_tri_gate2.jpeg?200 |Bulk_Tri_Gate2}} |
**Type:** **Bulk Tri-Gate** with **T<sub>OX</sub>** 0.85 nm, **W<sub>FIN</sub>** 8 nm, **Tapering Angle** of 84° and **L<sub>G</sub>** 24 nm\\ | **Type:** **Bulk Tri-Gate** with **T<sub>OX</sub>** 0.85 nm, **W<sub>FIN</sub>** 8 nm, **Tapering Angle** of 84° and **L<sub>G</sub>** 24 nm\\ | ||
**Source:** [[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6585747|Impact of Transistor Architecture]] | **Source:** [[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6585747|Impact of Transistor Architecture]] | ||
+ | {{:bulk_tri_gate2_me.jpg?direct&200 |Bulk_Tri_Gate2_meshed}}\\ | ||
+ | {{:bulk_tri_gate2_sim.jpg?direct&200 |Bulk_Tri_Gate2_simulated}} | ||
\\ \\ \\ \\ \\ \\ | \\ \\ \\ \\ \\ \\ | ||
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that the gate material surrounds the channel region on all sides. | that the gate material surrounds the channel region on all sides. | ||
- | {{:all_around_gate.jpeg?200 |}} | + | {{:all_around_gate.jpeg?200 |All_Around_Gate}} |
**Type:** **All-Around-Gate** with **T<sub>OX</sub>** 1 nm and **L<sub>G</sub>** 5,6 nm\\ | **Type:** **All-Around-Gate** with **T<sub>OX</sub>** 1 nm and **L<sub>G</sub>** 5,6 nm\\ | ||
**Source:** [[http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2006/may/a2/a2.html|Nano Devices (SILVACO)]] | **Source:** [[http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2006/may/a2/a2.html|Nano Devices (SILVACO)]] | ||
\\ \\ \\ \\ \\ \\ | \\ \\ \\ \\ \\ \\ | ||
- | {{:all_around_gate2.jpeg?200 |}} | + | {{:all_around_gate2.jpeg?200 |All_Around_Gate2}} |
**Type:** **All-Around-Gate** with **T<sub>OX</sub>** 1,2 nm, **W<sub>FIN</sub>** 12 nm, **H<sub>FIN</sub>** 15 nm and **L<sub>G</sub>** 22 nm \\ | **Type:** **All-Around-Gate** with **T<sub>OX</sub>** 1,2 nm, **W<sub>FIN</sub>** 12 nm, **H<sub>FIN</sub>** 15 nm and **L<sub>G</sub>** 22 nm \\ | ||
**Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | **Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | ||
+ | {{:all_around_gate2.jpg?direct&200 |All_Around_Gate2_meshed}}\\ | ||
+ | {{:all_around_gate2_simul_me.jpg?direct&200 |All_Around_Gate2_simulated}}\\ | ||
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**Source:** [[http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2006/may/a2/a2.html|Nano Devices (SILVACO)]] | **Source:** [[http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2006/may/a2/a2.html|Nano Devices (SILVACO)]] | ||
{{:four_gate4.jpg?200 | Four_Gate_meshed}}\\ | {{:four_gate4.jpg?200 | Four_Gate_meshed}}\\ | ||
- | {{:four_gate_sim_without_contacts.jpg?200 |Four_Gate_simulated_without_contacts }} | + | {{:four_gate_sim_without_contacts.jpg?200 |Four_Gate_simulated}} |
\\ \\ \\ \\ \\ \\ | \\ \\ \\ \\ \\ \\ | ||
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FlexFET is a SOI IDG-CMOS technology with a damascene metal top gate\\ | FlexFET is a SOI IDG-CMOS technology with a damascene metal top gate\\ | ||
and an implanted JFET bottom gate that are self-aligned in a gate trench.\\ \\ | and an implanted JFET bottom gate that are self-aligned in a gate trench.\\ \\ | ||
- | {{:flexfet.jpeg?200 |}} | + | {{:flexfet.jpeg?200 |FlexFET}} |
**Type:** **FlexFET** with **T<sub>SI</sub>** 4 nm, **T<sub>OX</sub>** 11 nm and **L<sub>G</sub>** 32 nm\\ | **Type:** **FlexFET** with **T<sub>SI</sub>** 4 nm, **T<sub>OX</sub>** 11 nm and **L<sub>G</sub>** 32 nm\\ | ||
**Source:** [[http://www.americansemi.com/32nm_IDG_Flexfet_SOI_Transistor.pdf|Design of a 32nm Independently-Double-Gated FlexFET SOI Transistor]] | **Source:** [[http://www.americansemi.com/32nm_IDG_Flexfet_SOI_Transistor.pdf|Design of a 32nm Independently-Double-Gated FlexFET SOI Transistor]] | ||
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**Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | **Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | ||
{{:omega_gate_meshed.jpg?200 |Omega_Gate_meshed}}\\ | {{:omega_gate_meshed.jpg?200 |Omega_Gate_meshed}}\\ | ||
- | {{:omega_gate_simulated.jpg?200 |Omega_Gate_simulated_only_drain+channel+source}}\\ | + | {{:omega_gate_simulated.jpg?200 |Omega_Gate_simulated}}\\ |
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**Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | **Source:** [[http://www.nature.com/nature/journal/v479/n7373/fig_tab/nature10676_F5.html|Types of multigate MOSFET]] | ||
{{:pi_gate_meshed.jpg?200 |Pi_Gate_meshed}}\\ | {{:pi_gate_meshed.jpg?200 |Pi_Gate_meshed}}\\ | ||
- | {{:pi_gate_simulated.jpg?200 |Pi_Gate_simulated_only_drain+channel+source}}\\ | + | {{:pi_gate_simulated.jpg?200 |Pi_Gate_simulated}}\\ |
\\ \\ \\ \\ \\ \\ | \\ \\ \\ \\ \\ \\ | ||