We are proud to announce that our recently published paper titled "Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors" has been featured in Nature Communications Engineering.

In this paper we present a novel method based on optical spectroscopy for characterizing electrically active defects in Power-MOSFETs in much greater detail than was previously possible. Our method potentially opens up new ways to further improve these transistors, which are crucial for efficient power conversion.

This work has been performed in cooperation with Infineon Technologies AG and contributions from our colleagues Aleksandr, Christian, Dominic, Michael and Tibor.

Congratulations to all co-authors!