We are excited to share our new publication on stability benchmarking for 2D-material-based transistors, a topic that has become more important as 2D MOSFETs move from lab prototypes toward real technology integration:
In this paper our colleagues, Alexander Karl, Axel Verdianu, Dominic Waldhör et al. proposed a standardized approach to characterize and report hysteresis in transfer characteristics, addressing a key issue in the field: hysteresis values are often reported without consistent measurement conditions, making fair comparison across devices and gate stacks nearly impossible.
In this work, they:
✅ Provide a comprehensive analysis of dominant hysteresis mechanisms
✅ Suggest practical ways to experimentally distinguish these mechanisms
✅ Propose a standardized measurement scheme to improve comparability
✅ Enable stability projection from thicker prototypes down to scaled devices
If you work on 2D electronics, gate stack engineering, or reliability modeling, feel free to reach out. We are happy to discuss our results!