Tibor Grasser
Univ.Prof. Dipl.-Ing. Dr.techn., Head of Institute


Tibor Grasser is a professor of microelectronics reliability and an IEEE Fellow. He has been the head of the Institute for Microelectronics since 2016. He has edited various books, e.g. on advanced device modeling (World Scientific), the bias temperature instability (Springer) and hot carrier degradation (Springer), is a distinguished lecturer of the IEEE EDS, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011). He currently serves as an Associate Editor for the IEEE Transactions on Electron Devices following his assignment as Associate Editor for Microelectronics Reliability (Elsevier) and has been involved in various outstanding conferences such as IEDM, IRPS, SISPAD, ESSDERC, and IIRW. Prof. Grasser's current research interests include theoretical modeling of performance aspects of 2D and 3D devices (charge trapping, reliability), starting from the ab initio level over more efficient quantum-mechanical descriptions up to TCAD modeling. The models developed in his group have been made available in the most important commercial TCAD environments.


Welcome to the 32nd annual research review of the Institute for Microelectronics! Our permanent staff members, financed by the Austrian Federal Ministry of Education, Science and Research, have changed from last year and consist of eight full-time and four part-time employees. These include, five professors, one assistant professor, two senior scientists, a secretary and one part-time and two full-time technical assistants. In addition, one federally funded post-doctoral researcher and five doctoral researchers are working on exciting research problems. A further nineteen scientists and eight post-doctoral researchers are presently funded through projects supported by our industrial partners, the Austrian Science Fund (FWF), the Austrian Research Promotion Agency (FFG) and the Christian Doppler Gesellschaft (CDG).

Over the last year, three direct industrially funded projects, one by the Federal Ministry Republic of Austria (“Modeling of Radiation Effects in Flash Memories”), one by Associations, Foundations, Awards (“Efficient Quantum Transport Model for TCAD Applications”) and one by the Austrian Science Fund (“Single-Trap Characterization Methodology for Nanoscale MOSFETs”), have been successfully completed. The CDG projects on “High performance Technology CAD” and “Nonvolatile Magnetoresistive Memory and Logic”, as well as three projects funded by the FWF and the three FFG projects, “Innovative Communication Electronics for Aircraft Engines”, “Innovative Networks for networked Aircraft Subsystems” and “Technology Computer Aided Design of Negative Capacitance and Ferro-Electric Transistors”, are proceeding according to plan.

We are very pleased that our industrial partners have continued and extended their support for projects covering a wide range of topics, including reliability at cryogenic temperatures, the potential and risks of pilot technologies in regards to reliability, manufacturing and application of power semiconductors, efficient quantum transport modeling for TCAD applications, advanced MOSFET reliability characterization using array structures, modeling of hot-carrier degradation in Si-transistors and quantum mechanical simulation of tandem solar cells to study the influence of technological parameters on efficiency.

It is a great pleasure for us to report that three directly funded projects, namely “Reliability at cryogenic temperatures”, “Quantum Mechanical Calculation of Electronic Parameters” and “Highly efficient characterization of transistor arrays”, three FWF projects, “Ultimate Scaling and Performance Potential of MoS2 FETs”, “Numerical Constraints for the Wigner and the Sigma Equation” and “General Nano-Electromagnetic Quantum Phase Space Model” as well as one H2020 project, “Modeling Unconventional Nanoscaled Device FABrication” and one Christian Doppler Laboratory, “Single-Defect Spectroscopy in Semiconductor Devices”, have been started during the past year.

We are exceptionally proud of our Institute's continuously high academic and scientific output. This is reflected in our large number of long-term projects and in our high number of publications, especially when it comes to contributing to and participating in international conferences. We are aware, however, that this success would not be possible without the continuous support of our collaborators within academia and industry. We would therefore like to explicitly express our gratitude for their trust in our scientific work. In this regard, we are entering into the next year of our Institute, as ever, with high expectations.