A. Summary of Model Parameters

Table A.1: Summary of $\alpha$-SiC model parameters.

		4H-SiC		6H-SiC
SYMBOL	UNIT	$n$	$p$	$n$	$p$
BAND STRUCTURE
m $_{\nu}^{\ast}$	1	0.39	0.82	0.71	0.80
C $_{\nu}^\mathrm{BGN}$	eV	$2.0\times 10^{-2}$	$9.0\times 10^{-3}$	$9.0\times 10^{-3}$	$9.0\times 10^{-3}$
N $_{\nu}^\mathrm{BGN}$	cm$^{-3}$	$1.0\times 10^{17}$	$1.0\times 10^{17}$	$1.0\times 10^{17}$	$1.0\times 10^{17}$
$E_{g}^{T_{0}}$	eV	3.265		3.023
$\alpha ^{E_{g}}$	eV/K	$3.3\times 10^{-2}$		$3.3\times 10^{-2}$
$\beta ^{E_{g}}$	K	$1.0\times 10^{5}$		$1.0\times 10^{5}$
CARRIER MOBILITY
$\mu_{\nu\perp}/\mu_{\nu\parallel}$	1	0.8	1	5	1
$\mu _{\nu\perp,300}^\mathrm{max}$	cm$^2$/Vs	950	125	420	100
$\mu _{\nu\perp,300}^\mathrm{min}$	cm$^2$/Vs	40	16	30	6.8
$N_{\nu}^{\mathrm{ref}}$	cm$^{-3}$	$1.94\times 10^{17}$	$1.76\times 10^{19}$	$1.1\times 10^{18}$	$2.1\times 10^{19}$
$\alpha_{\nu}^{\mu}$	1	0.61	0.34	0.59	0.31
$\beta_{\nu}^{\mu}$	1	-0.5	-0.5	-0.5	-0.5
$\gamma_{\nu}^{\mu}$	1	-2.4	-2.15	-2.5	-2.15
ELECTRON SATURATION VELOCITY
$v_{\nu,300}^{\mathrm {sat}}$	cm/s	$2.2\times 10^{7}$	-	$1.9\times 10^{7}$	-
$\alpha _{\nu,300}^\mathrm{sat}$	1	1.2	-	1.7	-
$\delta_{\nu}^\mathrm{sat}$	1	-0.44	-	-1.0	-
$\beta _{\nu}^\mathrm{sat}$	1	1.0	-	1.25	-

Table A.2: Summary of additional $\alpha$-SiC model parameters.

		4H-SiC		6H-SiC
SYMBOL	UNIT	$n$	$p$	$n$	$p$
GENERATION AND RECOMBINATION
$N_{\nu}^\mathrm{SRH}$	cm$^{-3}$	$6.0\times 10^{17}$	$3.0\times 10^{17}$	$6.0\times 10^{17}$	$3.0\times 10^{17}$
$\gamma_{\nu}^\mathrm{SRH}$	1	0.3	0.3	0.3	0.3
$\tau_{\nu}^\mathrm{max}$	s	$1.0\times 10^{-7}$	$2.0\times 10^{-8}$	$1.0\times 10^{-7}$	$2.0\times 10^{-8}$
$C^\mathrm{AU}_{\nu}$	cm$^{6}$/s	$3.0\times 10^{-29}$	$3.0\times 10^{-29}$	$3.0\times 10^{-29}$	$3.0\times 10^{-29}$
$a_{\nu}$	cm$^{-1}$	$3.44\times 10^6$	$3.5\times 10^6$	$1.66\times 10^6$	$2.5\times 10^6$
$b_{\nu}$	V/cm	$2.58\times 10^7$	$1.7\times 10^7$	$1.27\times 10^7$	$1.48\times 10^7$
$\hbar \omega_{op}$	meV	106		106
INCOMPLETE IONIZATION
$\Delta E_\mathrm{d,a}$	meV	N $_{\mathrm h}$: $50\pm 5$ N $_{\mathrm k}$: $90\pm 5$	Al: $220\pm 20$ B: $330\pm 30$	N $_{\mathrm h}$: $80\pm 5$ N $_{\mathrm k_1}$: $140\pm 5$ N $_{\mathrm k_2}$: $145\pm 5$	Al: $220\pm 20$ B: $330\pm 30$
g $_\mathrm{D,A}$	1	2	4	2	4
DIELECTRIC AND THERMAL PROPERTIES
$\varepsilon_{\perp}/\varepsilon_{\parallel}$	1	9.76/9.98		9.66/10.03
$\kappa_{\perp}/\kappa_{\parallel}$	1	0.7		0.7
A$_{c}$	Jkg$^{-1}$K$^{-1}$	1026		1026
B$_{c}$	Jkg$^{-2}$K$^{-1}$	0.201		0.201
C$_{c}$	Jkg$^{-3}$K$^{-1}$	0		0
D$_{c}$	Jkg$^{-1}$K	$-3.66\times 10^{7}$		$-3.66\times 10^{7}$
A$\kappa$	cmKW$^{-1}$	$2.5\times 10^{-3}$		$2.5\times 10^{-3}$
B$\kappa$	cmW$^{-1}$	$2.75\times 10^{-4}$		$2.75\times 10^{-4}$
C$\kappa$	cm/KW$^{-1}$	$1.3\times 10^{-6}$		$1.3\times 10^{-6}$
$\kappa_0$	W/cmK	4.9		4.9
$\alpha^\kappa$	1	-1.5		-1.5
METAL-SEMICONDUCTOR CONTACT
$A^*$	Acm$^{-2}$K$^{-2}$	146	-	72	-
${\mathrm{q}}\,\chi$	eV	4.17	-	4.15	-
${\mathrm{q}}\,\phi_{\mathrm{m}}$	eV	Ti:  4.28                              Ni:  5.10                              Au:  5.15
${\mathrm{q}}\,\phi_{\mathrm{B}}$(Si)	eV	Ti:  1.12                              Ni:  1.69                              Au:  1.81
${\mathrm{q}}\,\phi_{\mathrm{B}}$(C)	eV	Ti:  1.25                              Ni:  1.87                              Au:  2.07

T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation