1.6 Scope of the Dissertation

The significant progress achieved in recent years on the SiC material development opened the possibility to realize SiC's unique features on electronic devices. That makes it now of great significance in the organization of this dissertation to briefly address both the SiC device technology, the modeling of material parameters and the results of numerical investigations.

Chapter 2 reviews the SiC process technology including fundamentals of the material properties, crystal growth, choice of polytype, ion implantation, contacts and interconnects, etching, insulators, and packaging.

Modeling and implementation of specific SiC material electronic transport equations and their boundary conditions, bandgap structure, carrier mobility and high field velocity saturation, dielectric and thermal properties, generation and recombination, incomplete ionization, and the relevant parameters based on the large amount of data published recently are covered in Chapter 3.

Quantitative evaluation of the applicability of the models and parameters, predictive simulation regarding the design and optimization of state-of-the-art semi-conducting (rectifiers, switches) and semi-insulating (RF transistors) SiC devices are presented in Chapter 4.

Chapter 5 gives a summary and conclusions of the dissertation.

T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation