Abkürzungen

BiCMOS
,,Bipolar Complementary Metal Oxide Semiconductor``
CED
,,Critical Damage-Energy-Density``
CMOS
,,Complementary Metal Oxide Semiconductor``
CPU
,,Central Processing Unit``
CVD
,,Chemical Vapour Deposition``
ECAD
,,Electronic Computer Aided Design``
IC
,,Integrated Circuit``
JESSI
,,Joint European Sub-Micron Silicon Initiative``
LAT
,,Large-Angle-Tilt``
LATID
,,Large-Angle-Tilt Implanted Drain``
LATIPS
,,Large-Angle-Tilt Implanted Punch-Through Stopper``
LDD
,,Lightly Doped Drain``
LOCOS
,,Local Oxidation of Silicon``
MCIMPL
Monte Carlo Simulator für die Ionen implantation
MMS
Massenmittelpunktsystem
MOS
,,Metal Oxide Semiconductor``
MOSFET
,,Metal Oxide Semiconductor Field-Effect Transistor``
NMOS
,,N-Channel Metal Oxide Semiconductor``
PIF
,,Profile Interchange Format``

PKA
,,Primary Knock-on Atom``
PMOS
,,P-Channel Metal Oxide Semiconductor``
PROMPT
,,Process Optimization in Multi ple Dimensions for Semiconductor Technology``
RSCE
,,Reverse Short Channel Effect``
RTA
,,Rapid Thermal Annealing``
SIMS
,,Secondary Ion Mass Spectrometry``
SRS
,,Split-Level Related Split``
TCAD
,,Technology Computer Aided Design``
TEM
,,Transmission Electron Microscopy``
TRS
,,Trajectory Related Split``
ULSI
,,Ultra Large Scale Integration``
X-TEM
,,Cross-section Transmission Electron Microscopy``
VISTA
,,Viennese Integrated System for Technology CAD Applications``
ZKW
Zweikörperwechselwirkung