| BTE |
... |
BOLTZMANN's transport equation |
| BZ |
... |
Brillouin zone |
| CMOS |
... |
Complementary MOS |
| CV |
... |
Capacitance-voltage |
| DIBL |
... |
Drain-induced barrier lowering |
| nMOS |
... |
n-type MOS |
| pMOS |
... |
p-type MOS |
| EUV |
... |
Extreme ultra violet |
| FET |
... |
Field-effect transistor |
| GIDL |
... |
Gate induced drain leakage |
| HOT |
... |
Hybrid orientation technology |
| ITRS |
... |
International technology roadmap for semiconductors |
| LOCOS |
... |
Local oxidation of Si |
| MOS |
... |
Metal-oxide-semiconductor |
| MOSFET |
... |
MOS field-effect transistor |
| PIF |
... |
Profile interchange format |
| RTA |
... |
Relaxation-time approximation |
| SGOI |
... |
SiGe on insulator |
| SIMOX |
... |
Separation-by-implanted-oxygen |
| SMT |
... |
Stress memorization technique |
| SOI |
... |
Si on insulator |
