Physical Quantities

Symbol		Unit		Description
$e_{ij},\gamma_{ij}$		1		Engineering strain component $(i,j)$
$\varepsilon _{ij}$		1		Component $(ij)$ of the strain tensor
$T_{ij}$		GPa		Component $(ij)$ of the stress tensor
$C_{ijkl}$		GPa		Component $(ijkl)$ of the elastic stiffness tensor
$c_{ij}$		GPa		Component $(ij)$ of the contracted stiffness tensor
$S_{ijkl}$		GPa$^{-1}$		Component $(ijkl)$ of the elastic compliance tensor
$s_{ij}$		GPa$^{-1}$		Component $(ij)$ of the contracted compliance tensor
$\ensuremath {\mathrm{q}}\ensuremath {\chi_\mathrm{S}}$		eV		Electron affinity of the semiconductor
$D_n$		m$^2$s$^{-1}$		Electron diffusion coefficient
$D_p$		m$^2$s$^{-1}$		Hole diffusion coefficient
$E$		Vm$^{-1}$		Electric field
$\epsilon$		eV		Energy
$\epsilon _c$		eV		Conduction band edge energy
$\epsilon _v$		eV		Valence band edge energy
$E_g$		eV		Band gap energy
$\Phi$		V		Potential
$\ensuremath {\mathrm{q}}\ensuremath {\Phi_\mathrm{MS}}$		eV		Work function difference between metal and semiconductor
$D(\epsilon )$		m$^{-3}$eV$^{-1}$		Density of states
$\ensuremath{\hbar\omega}$		eV		Phonon energy
$\ensuremath{{\mathbf{J}}_n}$		Am$^{-2}$		Electron current density
$\ensuremath{{\mathbf{J}}_p}$		Am$^{-2}$		Hole current density
$k$		m$^{-1}$		Wave number
$\mathbf{k}$		m$^{-1}$		Wave number vector
$\epsilon_r$		1		Relative dielectric permittivity
$\mu_r$		1		Relative magnetic permeability
$\mu_n$		m$^2$V$^{-1}$s$^{-1}$		Electron mobility
$\mu_p$		m$^2$V$^{-1}$s$^{-1}$		Hole mobility
$\mu_\ensuremath{{\mathrm{eff}}}$		m$^2$V$^{-1}$s$^{-1}$		Effective electron mobility
$m$		kg		Mass
$\ensuremath{m_\mathrm{eff}}$		kg		Carrier effective mass in the semiconductor

Symbol		Unit		Description
$n$		m$^{-3}$		Electron concentration
$\ensuremath {n_\mathrm{i}}$		m$^{-3}$		Intrinsic concentration
$\ensuremath {N_\mathrm{D}}$		m$^{-3}$		Concentration of donors
$\ensuremath {N_\mathrm{A}}$		m$^{-3}$		Concentration of acceptors
$\ensuremath {N_\mathrm{c}}$		m$^{-3}$		Effective density of states of the conduction band
$\ensuremath {N_\mathrm{v}}$		m$^{-3}$		Effective density of states of the valence band
$p$		m$^{-3}$		Hole concentration
$t$		s		Time
$\tau_i$		s		Momentum relaxation time
$T$		K		Temperature
$v$		ms$^{-1}$		Velocity
$\mathbf{v}$		ms$^{-1}$		Velocity vector
$\ensuremath{V_\mathrm{GS}}$		V		Gate-source voltage
$\ensuremath{V_\mathrm{DS}}$		V		Drain-source voltage