| BJT | ... | Bipolar junction transistor |
| BTI | ... | Bias temperature instability |
| CETD | ... | Critical electron trap density |
| CHE | ... | Channel hot electron |
| CMOS | ... | Complementary MOS |
| CV | ... | Capacitance-voltage |
| DAHC | ... | Drain avalanche hot carrier |
| DCIV | ... | Direct current current voltage |
| DOS | ... | Density of states |
| DRAM | ... | Dynamic random access memory |
| DUT | ... | Device under test |
| ESD | ... | Electrostatic discharge |
| ESR | ... | Electron spin resonance |
| GPV | ... | Gate pulsed voltage |
| HBM | ... | Human body model |
| IV | ... | Current-voltage |
| MOS | ... | Metal-oxide-semiconductor |
| MOSFET | ... | MOS field-effect transistor |
| NBT | ... | Negative bias temperature |
| NBTI | ... | Negative bias temperature instability |
| nMOSFET | ... | n-channel MOSFET |
| pMOSFET | ... | p-channel MOSFET |
| SDR | ... | Spin dependent recombination |
| SGHE | ... | Secondary generated hot electron |
| SHE | ... | Substrate hot electron |
| SILC | ... | Stress-induced leakage current |
| SNM | ... | Static noise margin |
| SRAM | ... | Static random access memory |
| SRH | ... | Shockley-Read-Hall |
| TAT | ... | Trap assisted tunneling |
| TCAD | ... | Technology computer-aided design |
| TDDB | ... | Time dependent dielectric breakdown |
| VTC | ... | Voltage transfer characteristic |
| VLSI | ... | Very large scale integration |