When no native oxide is present, a flat interface representing a Si-ambient interface is grown into SiO with a thickness dependent on the oxidation time, temperature, ambient (wet-HO or dry-O), pressure, and the crystal orientation of the underlying silicon. The modifications and requirements of the LS method to include oxidation are presented in Section 3.2.1.
When no native oxide is present, the oxidation process begins with , as shown in Figure 6.1a, where the surfaces representing the Si-SiO interface and SiO-ambient interface are overlapping. As the oxidation process begins, the Si-SiO interface goes deeper into the initial Si wafer, while the SiO-ambient interface moves towards the ambient.
Using the Massoud model, after 100 minutes of oxidation of a (100) oriented silicon wafer in a dry ambient at 1atm pressure and 1000 C temperature, an oxide with a thickness of 66.5nm is grown, depicted in Figure 6.1.