D.1.1 The Model FNPure

The tunnel current density is computed via expression (3.117) where $A$ and $B$ are fitting parameters. The model keywords are stated in Table D.1.

Table D.1: FNPure tunneling model keywords.

Symbol	Keyword	Type	Unit
$A$	a	Quantity	AV$^{-2}$
$B$	b	Quantity	mV$^{-1}$
	consistent	Boolean

An example input deck is

   Phys
   {
      tunnel = addNearestInterfaces("Device", "GateInsulator");
      +GateInsulator
      {
         Electron
         {
            tunnel = "FNPure";
            Tunnel
            {
               FNPure
               {
                  a = 9.946316e-7 "A/V^2";
                  b = 2.635706e10 "V/m";
                  consistent = no;
               }
            }
         }
         Hole
         {
            tunnel = "FNPure";
            Tunnel
            {
               FNPure
               {
                  a = 4.013e-7   "A/V^2";
                  b = 6.4216e12  "V/m";
               }
            }
         }
      }
   }

where electron and hole tunneling is turned on. The values of a and b can be chosen to fit measurement results. The electron tunnel current is not entered into the continuity equation of the neighboring segments using the consistent keyword.

A. Gehring: Simulation of Tunneling in Semiconductor Devices