| nMOS | ... | n-type MOS |
| pMOS | ... | p-type MOS |
| BTE | ... | BOLTZMANN's transport equation |
| CMOS | ... | Complementary MOS |
| CNT | ... | Carbon nanotube |
| CSB | ... | Central shutter barrier |
| CV | ... | Capacitance-voltage |
| DIBL | ... | Drain-induced barrier lowering |
| DRAM | ... | Dynamical RAM |
| ECB | ... | Electrons from the conduction band |
| EED | ... | Electron energy distribution |
| EEPROM | ... | Electrically erasable programmable read-only memory |
| EOT | ... | Effective oxide thickness |
| EVB | ... | Electrons from the valence band |
| FET | ... | Field-effect transistor |
| FN | ... | FOWLER-NORDHEIM |
| FWHM | ... | Full-width half-maximum |
| HED | ... | Hole energy distribution |
| HVB | ... | Holes from the valence band |
| ITRS | ... | International Technology Roadmap for Semiconductors |
| IV | ... | Current-voltage |
| LDD | ... | Lightly doped drain |
| MOCVD | ... | Metal-organic chemical vapor deposition |
| MOS | ... | Metal-oxide-semiconductor |
| MPU | ... | Microprocessor unit |
| MOSFET | ... | MOS field-effect transistor |
| NEGF | ... | Non-equilibrium GREEN's function |
| NTRS | ... | National Technology Roadmap for Semiconductors |
| NVM | ... | Non-volatile memory |
| PIF | ... | PROFILE INTERCHANGE FORMAT |
| PLEDM | ... | Planar localized-electron device memory |
| PLEDTR | ... | Planar localized-electron device transistor |
| QTBM | ... | Quantum transmitting boundary method |
| QBS | ... | Quasi-bound state |
| RAM | ... | Random-access memory |
| RTA | ... | Relaxation-time approximation |
| SIA | ... | Semiconductor Industry Association |
| SILC | ... | Stress-induced leakage current |
| SIMS | ... | Secondary ion mass spectroscopy |
| SOI | ... | Silicon on insulator |
| SONOS | ... | Silicon-oxide-nitride-oxide-silicon |
| SRAM | ... | Static random-access memory |
| STI | ... | Shallow trench isolation |
| TAT | ... | Trap-assisted tunneling |
| TCAD | ... | Technology computer-aided design |
| TEM | ... | Transmission electron microscopy |
| TM | ... | Transfer matrix |
| WKB | ... | WENTZEL-KRAMERS-BRILLOUIN |
| WSS | ... | WAFER-STATE SERVER |
A. Gehring: Simulation of Tunneling in Semiconductor Devices