Physical Quantities

$\varepsilon$	...	permittivity
$\mu$	...	permeability
$\mu_b$	...	mobility in band $b$
$\nu_b$	...	carrier concentration
$\varrho$	...	space charge density
$\sigma$	...	conductivity
$\kappa_b$	...	thermal conductivity
$\tau_{\mathcal{E} \, b}$	...	energy relaxation time
$\psi$	...	electrostatic potential
$\ensuremath{\boldsymbol{\mathrm{A}}}$	...	vector potential
$D_b$	...	diffusion coefficient
$N_b$	...	density of states
$N_D^+$	...	concentration of ionized donors
$N_A^-$	...	concentration of ionized acceptors
$U_T$	...	temperature voltage
$n$	...	electron concentration
$p$	...	hole concentration
$T_b$	...	carrier temperature
$T_\mathrm{L}$	...	lattice temperature
$\beta_b$	...	kurtosis
$s_b$	...	sign of the carrier charge
$t$	...	simulation time
$w_b$	...	average energy of the carriers
$w_0$	...	average energy of the carriers in equilibrium with the lattice

$\ensuremath{\boldsymbol{\mathrm{B}}}$	...	magnetic flux density
$\ensuremath{\boldsymbol{\mathrm{D}}}$	...	dielectric flux density
$\ensuremath{\boldsymbol{\mathrm{E}}}$	...	electric field
$\ensuremath{\boldsymbol{\mathrm{H}}}$	...	magnetic field
$\ensuremath{\boldsymbol{\mathrm{F}}}_b$	...	particle flux density
$\ensuremath{\boldsymbol{\mathrm{J}}}_b$	...	current density
$\ensuremath{\boldsymbol{\mathrm{S}}}_b$	...	energy flux density
$\ensuremath{\boldsymbol{\mathrm{K}}}_b$	...	kurtosis flux density
$V_\mathrm{G}$	...	gate voltage
$V_\mathrm{D}$	...	drain voltage
$V_\mathrm{S}$	...	source voltage
$I_\mathrm{D}$	...	drain current
$\ensuremath{\boldsymbol{\mathrm{v}}}$	...	group velocity
$\ensuremath{\boldsymbol{\mathrm{p}}}$	...	momentum
$\ensuremath{\boldsymbol{\mathrm{k}}}$	...	wave vector
$\tau_m$	...	momentum relaxation time
$\tau_\mathcal{E}$	...	energy relaxation time
$\tau_S$	...	energy flux density relaxation time
$\tau_\beta$	...	kurtosis relaxation time
$\tau_K$	...	kurtosis flux density relaxation time
$R$	...	net recombination rate
$G_{\mathcal{E}\, n}$	...	net energy generation rate
$G_{\beta \, n}$	...	net kurtosis generation rate
$c_n$	...	rate constant for electron capture
$e_n$	...	rate constant for electron emission
$c_p$	...	rate constant for hole capture
$e_p$	...	rate constant for hole emission
$\mathcal{E}_\mathrm{C}$	...	conduction band edge energy
$\mathcal{E}_\mathrm{V}$	...	valence band edge energy
$\mathcal{E}_\mathrm{F}$	...	quasi FERMI energy level in thermal equilibrium
$F_n$	...	quasi FERMI energy level for electrons
$F_p$	...	quasi FERMI energy level for holes
$\mathcal{E}_t$	...	trap energy level

M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF