Literaturverzeichnis

1

D.C. COLE, E.M. BUTURLA, S.S. FURKAY, K. VARAHRAMYAN, J. SLINKMAN, J.A. MANDELMAN, D.P. FOTY, O. BULA, A.W. STRONG, J.W. PARK, T.D. LINTON JR., J.B. JOHNSON, M.V. FISCHETTI, S.E. LAUX, P.E. COTTRELL, H.G. LUSTIG, F. PILEGGI, D. KATCOFF. The Use of Simulation in Semiconductor Technology Development. Solid-State Electronics, Vol. 33, No. 6, 1990, pp. 591-623.

2

W. LEE, S.E. LAUX, M.V. FISCHETTI, G. BACCARANI, A. GNUDI, J.M.C. STORK, J.A. MANDELMAN, E.F. CRABBé, M.R. WORDMAN, F. ODEH. Numerical Modeling of Advanced Semiconductor Devices. IBM Journal of Research and Development, Vol. 36, No. 2, 1992, pp. 208-232.

3

H. KOSINA, E. LANGER, S. SELBERHERR. Device Modelling for the 1990s. Microelectronics Journal, Vol. 26, No. 2/3, 1995, pp. 217-233.

4

H. STIPPEL, E. LEITNER, CH. PICHLER, H. PUCHNER, E. STRASSER, S. SELBERHERR. Process Simulation for the 1990s. Microelectronics Journal, Vol. 26, No. 2/3, 1995, pp. 203-215.

5

M.B. CHANG, K.M. CHANG, C. KUO, S.K. CHENG. A New Scalable Floating-Gate EEPROM Cell. Solid-State Electronics, Vol. 35, No. 10, 1992, pp. 1521-1528.

6

S. MINAMI, Y. KAMIGAKI. New Scaling Guidelines for MNOS Nonvolatile Memory Devices. IEEE Transactions on Electron Devices, Vol. 38, No. 11, 1991, pp. 2519-2526.

7

J.G. ROLLINS, V. AXELRAD, S.J. MOTZNY. Carrier Temperature Dependent Gate Current Modeling for EEPROM Simulation. Microelectr.Eng., Vol. 19, 1992, pp. 265-268.

8

M.-B. CHANG, U. SHARMA, S.K. CHENG. An Improved Model for the Erase Operation of a FLOTOX EEPROM Cell. Solid-State Electronics, Vol. 35, No. 10, 1992, pp. 1513-1520.

9

C. PAPADAS, G. GHIBAUDO, G. PANANAKAKIS, C. RIVA. Numerical Transient Simulation of the Programming Window Degradation in FLOTOX EEPROM Cells. Solid-State Electronics, Vol. 36, No. 9, 1993, pp. 1303-1311.

10

A. CONCANNON, S. KEENEY, A. MATHEWSON, R. BEZ, C. LOMBARDI. Two-Dimensional Numerical Analysis of Floating-Gate EEPROM Devices. IEEE Transactions on Electron Devices, Vol. 40, No. 7, 1993, pp. 1258-1262.

11

S. KEENEY, R. BEZ, D. CANTARELLI, F. PICCININI, A. MATHEWSON, L. RAVAZZI, C. LOMBARDI. Complete Transient Simulation of Flash EEPROM Devices. IEEE Transactions on Electron Devices, Vol. 39, No. 12, 1992, pp. 2750-2757.

12

K.T. SAN, C. KAYA, D.K.Y. LIU, T.-P. MA, P. SHAH. A New Technique for Determining the Capacitive Coupling Coefficients in Flash EEPROM's. IEEE Electron Device Letters, Vol. 13, No. 6, 1992, pp. 328-331.

13

J. VAN HOUDT, L. HASPESLAGH, D. WELLEKENS, L. DEFERM, G. GROESENEKEN, H.E. MAES. HIMOS-A High Efficiency Flash EPROM Cell for Embedded Memory Applications. IEEE Transactions on Electron Devices, Vol. 40, No. 12, 1993, pp. 2255-2263.

14

J. VAN HOUDT, G. GROESENEKEN, H.E. MAES. An Analytical Model for the Optimization of High Injection MOS Flash EPROM Devices. Microelectr.Eng., Vol. 19, 1992, pp. 257-260.

15

S. MINAMI, Y. KAMIGAKI. A Novel MONOS Nonvolatile Memory Device Ensuring 10-Year Data Retention after 10 Erase/Write Cycles. IEEE Transactions on Electron Devices, Vol. 40, No. 11, 1993, pp. 2011-2017.

16

P. HEREMANS. Hot-Carrier Phenomena in MOS Field-Effect Transistors: Analysis, Techniques, Injection Mechanism and Degradation Models. Dissertation, IMEC, Katholieke Universiteit Leuven, 1990.

17

C.M. SNOWDEN. Semiconductor Device Modelling. Peter Peregrinus Ltd., 1988.

18

G. ADAM, O. HITTMAIR. Wärmetheorie. Vieweg, 1977.

19

D.K. FERRY, J.R. BARKER, C. JACOBONI. Physics of Nonlinear Transport in Semiconductors. Plenum Press, 1980.

20

D.K. FERRY. Semiconductors. Macmillan Publishing Company, 1991.

21

O. HITTMAIR. Einführung in die Quantentheorie. Verlag Karl Thiemig, 1972.

22

K. HESS. Monte Carlo Device Simulation: Full Band and Beyond. Kluwer, 1991.

23

H. KOSINA. Simulation des Ladungstransportes in elektronischen Bauelementen mit Hilfe der Monte-Carlo-Methode. Dissertation, Institut für Mikroelektronik, Technische Universität Wien, 1992.

24

S. SELBERHERR. MOS Device Modeling at 77K. IEEE Transactions on Electron Devices, Vol. 36, No. 8, 1989, pp. 1464-1474.

25

M.R. PINTO. PISCES IIB. Stanford University, 1985.

26

G. BACCARANI, M.R. WORDEMAN. An Investigation of Steady-State Velocity Overshoot in Silicon. Solid-State Electronics, Vol. 28, No. 4, 1985, pp. 407-416.

27

R.K. COOK, J. FREY. An Efficient Technique for Two-Dimensional Simulation of Velocity Overshoot Effects in Si and GaAs Devices. pp. 65-87.

28

C.L. GARDNER. Numerical Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device. IEEE Transactions on Electron Devices, Vol. 38, No. 2, 1991, pp. 392-398.

29

A. GNUDI, F. ODEH. An Efficient Discretization Scheme for the Energy-Continuity Equation in Semiconductors. In Proceedings: Simulation of Semiconductor Devices and Processes, Bologna, 1988, Vol. 3, Ed. by G. BACCARANI, M. RUDAN, Tecnoprint, pp. 387-390.

30

N. GOLDSMAN, J. FREY. Efficient and Accurate Use of the Energy Transport Method in Device Simulation. IEEE Transactions on Electron Devices, Vol. 35, No. 9, 1988, pp. 1524-1529.

31

M. RUDAN, F. ODEH. Multi-Dimensional Discretization Scheme for the Hydrodynamical Model of Semiconductor Devices. Computational Electronics, Vol. 6, No. 3, 1986, pp. 149-183.

32

W. HäNSCH, M. MIURA-MATTAUSCH. The Hot-Electron Problem in Small Semiconductor Devices. Journal of Applied Physics, Vol. 60, No. 2, 1986, pp. 650-656.

33

B. MEINERZHAGEN, W.L. ENGL. The Influence of the Thermal Equilibrium on the Accuracy of Classical Two-Dimensional Numerical Modeling of Silicon Submicrometer MOS Devices. IEEE Transactions on Electron Devices, Vol. 35, No. 5, 1988, pp. 689-697.

34

H. REES. Calculations of Steady State Distribution Functions by Exploiting Stability. Physics Lett.A, Vol. 26, No. 9, 1968, pp. 416-417.

35

C. JACOBONI, L. REGGIANI. The Monte Carlo Method for the Solution of Charge Transport in Semiconductors with Application to Covalent Materials. Review of Modern Physics, Vol. 55, No. 3, 1983, pp. 645-705.

36

C. JACOBONI, P. LUGLI. The Monte Carlo Method for Semiconductor Device Simulation. Springer-Verlag, 1989.

37

A. PHILLIPS, P.J. PRICE. Monte Carlo Calculation on Hot Electron Energy Tails. Applied Physics Letters, Vol. 30, No. 10, 1977, pp. 528-530.

38

P.J. PRICE. Calculation of Hot Electron Phenomena. Solid-State Electronics, Vol. 21, 1978, pp. 9-16.

39

O. MADELUNG. Festkörpertheorie I. Springer-Verlag, 1972.

40

C. KITTEL. Einführung in die Festkörperphysik. Oldenburg, 1988.

41

C. KITTEL, C.Y. FONG. Quantentheorie der Festkörper. Oldenburg, 1988.

42

O. MADELUNG. Festkörpertheorie II. Springer-Verlag, 1972.

43

A. MESSIAH. Quantenmechanik II. de Gruyter, 1979.

44

W. FAWCETT, A.D. BOARDMAN, S. SWAIN. Monte Carlo Determination of Electron Transport in Gallium Arsenide. Journal of Physics and Chemistry of Solids, Vol. 31, 1970, pp. 1963-1990.

45

H. KOSINA, S. SELBERHERR. A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis. IEEE Transactions on CAD, Vol. 13, No. 2, 1994, pp. 201-210.

46

E. SANGIORGI, B. RICCò, F. VENTURI. MOS: An Efficient Monte Carlo Simulator for MOS Devices. IEEE Transactions on CAD, Vol. 7, No. 2, 1988, pp. 259-271.

47

F. VENTURI, R.K. SMITH, E. SANGIORGI, M.R. PINTO, B. RICCò. A General Purpose Device Simulatior Coupling Poisson and Monte Carlo Transport with Application to Deep Submicron MOSFET's. IEEE Transactions on CAD, Vol. 8, No. 4, 1989, pp. 360-369.

48

F. VENTURI, R.K. SMITH, E. SANGIORGI, M.R. PINTO, B. RICCò. A New Coupling Scheme for a Self-Consistent Poisson and Monte Carlo Device Simulator. In Proceedings: Simulation of Semiconductor Devices and Processes III, 1988, pp. 383-386.

49

D. ARNOLD, E. CARTIER, D.J. DIMARIA. Acoustic-Phonon Runaway and Impact Ionization by Hot Electrons in Silicon Dioxide. Physical Review B, Vol. 45, No. 3, 1992, pp. 1477-1480.

50

D.J. DIMARIA, E. CARTIER, D. ARNOLD. Impact Ionization, Trap Creation, Degradation, and Breakdown in Silicon Dioxide Films on Silicon. Journal of Applied Physics, Vol. 73, No. 7, 1993, pp. 3367-3384.

51

A. ABRAMO, F. VENTURI, E. SANGIORGI, J.M. HIGMAN, B. RICCò. A Numerical Method to Compute Isotropic Band Models from Anisotropic Semiconductor Band Structures. pp. 1327-1336.

52

M.V. FISCHETTI. Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures-Part I: Homogeneous Transport. IEEE Transactions on Electron Devices, Vol. 38, No. 3, 1991, pp. 634-649.

53

E.O. KANE. Band Structure of Indium Antimonide. Journal of Physics and Chemistry of Solids, Vol. 1, 1956, pp. 249-261.

54

E.O. KANE. Zener Tunneling in Semiconductors. Journal of Physics and Chemistry of Solids, Vol. 12, 1959, pp. 181-188.

55

E.O. KANE. Theory of Tunneling. Journal of Applied Physics, Vol. 32, No. 1, 1961, pp. 83-91.

56

P.N. ARGYRES. Theory of Tunneling and its Dependence on a Longitudinal Magnetic Field. Physical Review, Vol. 126, No. 4, 1962, pp. 1386-1393.

57

J.Y. TANG, K. HESS. Impact Ionization of Electrons in Silicon (steady state). Journal of Applied Physics, Vol. 54, No. 9, 1983, pp. 5139-5144.

58

R. BRUNETTI, C. JACOBONI, F. VENTURI, E. SANGIORGI, B. RICCò. A Many-Band Silicon Model for Hot-Electron Transport at High Energies. Solid-State Electronics, Vol. 32, No. 12, 1989, pp. 1663-1667.

59

T. VOGELSANG, W. HäNSCH. A Novel Approach for Including Band Structure Effects in a Monte Carlo Simulation of Electron Transport in Silicon. Journal of Applied Physics, Vol. 70, No. 3, 1991, pp. 1493-1499.

60

A. ABRAMO, F. VENTURI, E. SANGIORGI, J.M. HIGMAN, C. FIEGNA, B. RICCò. A Numerical Method to Compute Isotropic Band Models From Anisotropic Semiconductor Band Structures. In Proceedings: Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits NUPAD IV, Seattle, 1992, pp. 85-90.

61

H. SHICHIJO, K. HESS, G.E. STILLMAN. Simulation of High-Field Transport in GaAs Using a Monte Carlo Method and Pseudopotential Band Structures. Applied Physics Letters, Vol. 38, 1981, pp. 89-91.

62

J.R. CHELIKOWSKY, M.L. COHEN. Electronic Structure of Silicon. Physical Review B, Vol. 10, No. 12, 1974, pp. 5095-5107.

63

M.L. COHEN, J.R. CHELIKOWSKY. Electronic Structure and Optical Properties of Semiconductors, Vol. 75 of Springer Series in Solid-State Sciences. Springer, 1988.

64

R.W. JANSEN, O.F. SANKEY. Ab initio Linear Combination of Pseudo-Atomic-Orbital Scheme for the Electronic Properties of Semiconductors: Results for Ten Materials. Physical Review B, Vol. 36, No. 12, 1987, pp. 6520-6531.

65

J. ROBERTSON. Electronic Structure of Amorphous Semiconductors. Advances in Physics, Vol. 32, No. 3, 1983, pp. 361-452.

66

M.V. FISCHETTI, S.E. LAUX. Monte Carlo Analysis of Electron Transport in Small Semiconductor Devices Including Band-Structure and Space-Charge Effects. Physical Review B, Vol. 38, No. 14, 1988, pp. 9721-9745.

67

J.R. BARKER. Quantum Transport Theory of High-Field Conduction in Semiconductors. J.Phys.C, Vol. 6, 1973, pp. 2663-2684.

68

J.R. BARKER. High Field Collision Rates in Polar Semiconductors. Solid-State Electronics, Vol. 21, 1978, pp. 267-271.

69

M.V. FISCHETTI, S.E. LAUX. Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures-Part II: Submicrometer MOSFET's. IEEE Transactions on Electron Devices, Vol. 38, No. 3, 1991, pp. 634-649.

70

A. ABRAMO, R. BRUNETTI, C. JACOBONI, F. VENTURI, E. SANGIORGI. Monte Carlo Simulation of Carrier-Carrier Interaction for Silicon Devices. In Proceedings: Simulation of Semiconductor Devices and Processes, 1993, Vol. 5, Ed. by S. SELBERHERR, H. STIPPEL, E. STRASSER, Springer, pp. 181-184.

71

M.V. FISCHETTI. Effect of the Electron-Plasmon Interaction on the Electron Mobility in Silicon. Physical Review B, Vol. 44, No. 11, 1991, pp. 5527-5534.

72

H. BROOKS. Scattering by Ionized Impurities in Semiconductors. Physical Review, Vol. 83, 1951, pp. 879-887.

73

E. CONWELL, V.F. WEISSKOPF. Theory of Impurity Scattering in Semiconductors. Physical Review, Vol. 77, No. 3, 1950, pp. 388-390.

74

B.K. RIDLEY. Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for Charged-Impurity Scattering in Semiconductors: Third-Body Interference. Journal of Physics C, Vol. 10, 1977, pp. 1589-1593.

75

D. CHATTOPADHYAY, H.J. QUEISSER. Electron Scattering by Ionized Impurities in Semiconductors. Review of Modern Physics, Vol. 53, No. 4, 1981, pp. 745-768.

76

J. DEWEY, M.A. OSMAN. Ionized Impurity Scattering Model for Monte Carlo Calculations. In Proceedings: Int. Workshop on Computational Electronics, University of Leeds, August 1993, pp. 231-235.

77

L.E. KAY, T.-W. TANG. An Improved Ionized-Impurity Scattering Model for Monte Carlo Simulations. Journal of Applied Physics, Vol. 70, No. 3, 1991, pp. 1475-1482.

78

L.E. KAY, T.-W. TANG. Monte Carlo Calculation of Strained and Unstrained Electron Mobilities in SiGe Using an Improved Ionized-Impurity Model. Journal of Applied Physics, Vol. 70, No. 3, 1991, pp. 1483-1488.

79

J. BARDEEN, W. SHOCKLEY. Deformation Potentials and Mobilities in Non-Polar Crystals. Physical Review, Vol. 80, No. 1, 1950, pp. 72-80.

80

W.A. HARRISON. Scattering of Electrons by Lattice Vibrations in Nonpolar Crystals. Physical Review, Vol. 104, No. 5, 1956, pp. 1281-1290.

81

D.J. ROBINS. Aspects of the Theory of Impact Ionization in Semiconductors. Physica status solidi (b), Vol. 97, No. 9, 1980, pp. 9-50.

82

A. GHETTI, L. SELMI, E. SANGIORGI, A. ABRAMO, F. VENTURI. A Combined Transport-Injection Model for Hot-Electron and Hot-Hole Injection in the Gate Oxide of MOS Structures. In Proceedings: International Electron Devices Meeting, 1994, pp. 363-366.

83

T.P. PEARSALL, F. CAPASSO, R.E. NAHORY, M.A. POLLACK, J.R. CHELIKOWSKY. The Band Structure Dependence of Impact Ionization by Hot Carriers in Semiconductors: GaAs. Solid-State Electronics, Vol. 21, 1978, pp. 297-302.

84

R. THOMA, H.J. PEIFER, W.L. ENGL, W. QUADE, R. BRUNETTI, C. JACOBONI. An Improved Impact-Ionization Model for High-Energy Electron Transport in Si with Monte Carlo Simulation. Journal of Applied Physics, Vol. 69, No. 4, 1991, pp. 2300-2311.

85

C. FIEGNA, E. SANGIORGI, F. VENTURI, A. ABRAMO, B. RICCÓ. Modeling of High Energy Electrons in n-MOSFETs. In Proceedings: International Electron Devices Meeting, 1991, pp. 119-122.

86

C. CANALI, C. JACOBONI, F. NAVA, G. OTTAVIANI, A.A. QUARANTA. Electron Drift Velocity in Silicon. Physical Review B, Vol. 12, No. 4, 1975, pp. 2265-2284.

87

A. ABRAMO, L. BAUDRY, R. BRUNETTI, R. CASTAGNE, M. CHAREF, F. DESSENNE, P. DOLLFUS, R. DUTTON, W.L. ENGL, R. FAUQUEMBERGUE, C. FIEGNA, M.V. FISCHETTI, S. GALDIN, N. GOLDSMAN, M. HACKEL, C. HAMAGUCHI, K. HESS, K. HENNACY, P. HESTO, J.M. HIGMAN, T. IIZUKA, C. JUNGEMANN, Y. KAMAKURA, H. KOSINA, T. KUNIKIYO, S.E. LAUX, H. LIN, C. MAZIAR, H. MIZUNO, H.J. PEIFER, S. RAMASWAMY, N. SANO, P.G. SCROBOHACI, S. SELBERHERR, M. TAKENAKA, T.-W. TANG, K. TANIGUCHI, J.L. THOBEL, R. THOMA, K. TOMIZAWA, M. TOMIZAWA, T. VOGELSANG, S.-L. WANG, X. WANG, C.-S. YAO, P.D. YODER, A. YOSHII. A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport in Silicon. IEEE Transactions on Electron Devices, Vol. 41, No. 9, 1994, pp. 1646-1654.

88

P.D. YODER, J.M. HIGMAN, J. BUDE, K. HESS. Monte Carlo Simulation of Hot Electron Transport in Si Using a Unified Pseudopotential Description of the Crystal. Semiconductor Science and Technology, Vol. 7, 1992, pp. B357-359.

89

T. KUNIKIYO, Y. KAMAKURA, M. YAMAJI, H. MIZUNO, M. TAKENAKA, K. TANAGUCHI, C. HAMAGUCHI. Adjustable Parameter Free Monte Carlo Simulation for Electron Transport in Silicon Including Full Band Structure. In Proceedings: Int. Workshop on VLSI Process and Device Modeling (1993 VPAD), Nara, Japan, 1993, Jap.Soc.Appl.Phys., pp. 40-41.

90

H. FRöHLICH. Theory of Electrical Breakdown in Ionic Crystals. Proc.Roy.Soc.A, Vol. 160, 1937, pp. 230-241.

91

R.J. SEEGER, E. TELLER. On the Electrical Breakdown of the Alkali Halides. Physical Review, Vol. 54, 1938, pp. 515-519.

92

H.B. CALLEN. Electric Breakdown in Ionic Crystals. Physical Review, Vol. 76, No. 9, 1949, pp. 1394-1402.

93

R. STRATTON. The Influence of Interelectronic Collisions on Conduction and Breakdown in Polar Crystals. Proc.Roy.Soc.A, Vol. 246, 1958, pp. 406-422.

94

K.K. THORNBER, R.P. FEYNMAN. Velocity Aquired by an Electron in a Finite Electric Field in a Polar Crystal. Physical Review B, Vol. 1, No. 10, 1970, pp. 4099-4114.

95

K.K. THORNBER. High-Field Electronic Conduction in Insulators. Solid-State Electronics, Vol. 21, 1978, pp. 259-256.

96

F.L. GALEENER, G. LUCOVSKY. Longitudinal Optical Vibrations in Glasses: GeO and SiO. Phys.Rev.Lett., Vol. 37, No. 22, 1976, pp. 1474-1478.

97

W.T. LYNCH. Calculation of Electric Field Breakdown in Quartz Determined by Dielectric Dispersion Analysis. Journal of Applied Physics, Vol. 43, No. 8, 1972, pp. 3274-3278.

98

J. LLACER, E.L. GARWIN. Electron-Phonon Interaction in Alkali Halides. I. The Transport of Secondary Electrons with Energies between 0.25 and 7.5 eV. Journal of Applied Physics, Vol. 40, No. 7, 1969, pp. 2766-2775.

99

J. LLACER, E.L. GARWIN. Electron-Phonon Interaction in Alkali Halides. II. Transmission Secondary Emission from Alkali Halides. Journal of Applied Physics, Vol. 40, No. 7, 1969, pp. 2776-2792.

100

L.H. HOLWAY, JR, D.W. FRADIN. Electron Avalanche Breakdown by Laser Radiation in Insulating Crystals. Journal of Applied Physics, Vol. 46, No. 1, 1975, pp. 279-291.

101

R.C. HUGHES. Charge-Carrier Transport in Amorphous SiO: Direct Measurement of the Drift Mobility and Lifetime. Physical Review Letters, Vol. 30, No. 26, 1973, pp. 1333-1336.

102

R.C. HUGHES. High Field Electronic Properties of SiO. Solid-State Electronics, Vol. 21, 1978, pp. 251-258.

103

R.C. HUGHES. Time-Resolved Hole Transport in -SiO. Physical Review B, Vol. 15, No. 4, 1977, pp. 2012-2020.

104

D. EMIN. Phonon-Assisted Transition Rates I. Optical-Phonon-Assisted Hopping in Solids. Advances in Physics, Vol. 24, 1974, pp. 305-348.

105

H. KöSTNER, JR, K. HüBNER. Statistics and Transport Behaviour of Electrons in SiO. Phys.Stat.Sol.B, Vol. 118, 1983, pp. 293-301.

106

D.K. FERRY. Electron Transport and Breakdown in SiO. Journal of Applied Physics, Vol. 50, No. 3, 1979, pp. 1422-1427.

107

H.-J. FITTING, J.-U. FRIEMANN. Monte-Carlo Studies of the Electron Mobility in SiO. Physica status solidi (a), Vol. 69, 1982, pp. 349-358.

108

M. SPARKS, D.L. MILLS, R. WARREN, T. HOLSTEIN, A.A. MARADUDIN, L.J. SHAM, E. LOH, JR, D.F. KING. Theory of Electron-Avalanche Breakdown in Solids. Physical Review B, Vol. 24, No. 6, 1981, pp. 3519-3536.

109

M.V. FISCHETTI. Monte Carlo Solution to the Problem of High-Field Electron Heating in SiO. Phys.Rev.Lett., Vol. 53, No. 18, 1984, pp. 1755-1758.

110

M.V. FISCHETTI, D.J. DIMARIA, S.D. BRORSON, T.N. THEIS, J.R. KIRTLEY. Theory of High-Field Transport in Silicon Dioxide. Physical Review B, Vol. 31, No. 11, 1985, pp. 8124-8142.

111

M.V. FISCHETTI, D.J. DIMARIA. Quantum Monte Carlo Simulation of High-Field Electron Transport: An Application to Silicon Dioxide. Phys.Rev.Lett., Vol. 55, No. 22, 1985, pp. 2475-2478.

112

M.V. FISCHETTI, D.J. DIMARIA. Hot Electron in SiO: Ballistic to Steady-State Transport. Solid-State Electronics, Vol. 31, No. 3/4, 1988, pp. 629-634.

113

W. POROD, D.K. FERRY. Monte Carlo Study of High-Energy Electrons in Silicon Dioxide. Physical Review Letters, Vol. 54, No. 11, 1985, pp. 1189-1191.

114

W. POROD, D.K. FERRY. Monte Carlo Study of High Electric Field Quantum Transport in SiO. Physica B, Vol. 134, 1985, pp. 137-141.

115

G. SCHUMICKI, P. SEEGEBRECHT. Prozeßtechnologie. Springer-Verlag, 1991.

116

S.M. SZE. Physics of Semicoductor Devices. John Wiley, 1981.

117

J.R. CHELIKOWSKY, M. SCHLüTER. Electron States in -Quartz: A Self-Consistent Pseudopotential Calculation. Physical Review B, Vol. 15, No. 8, 1977, pp. 4020-4029.

118

PH.M. SCHNEIDER, W.B. FOWLER. One-Electron Energy Bands of Silicon Dioxide in the Ideal -Cristolite Structure. Physical Review B, Vol. 18, No. 12, 1978, pp. 7122-7133.

119

E. CALABRESE, W.B. FOWLER. Electronic Energy-Band Structure of -Quartz. Physical Review B, Vol. 18, No. 6, 1978, pp. 2888-2896.

120

T.N. THEIS, J.R. KIRTLEY, D.J. DIMARIA, D.W. DONG. Light Emission from Electron-Injector Structures. Phys.Rev.Lett., Vol. 50, No. 10, 1983, pp. 750-754.

121

T.N. THEIS, D.J. DIMARIA, J.R. KIRTLEY, D.W. DONG. Strong Electric Field Heating of Conduction-Band Electrons in SiO. Phys.Rev.Lett., Vol. 52, No. 16, 1984, pp. 1445-1448.

122

K.M. GLASSFORD, J.R. CHELIKOWSKY. Structural and Electronic Properties of Titanium Dioxide. Physical Review B, Vol. 46, No. 3, 1992, pp. 1284-1298.

123

M. HACKEL, H. KOSINA, S. SELBERHERR. Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields. In Proceedings: Simulation of Semiconductor Devices and Processes V, 1993, pp. 65-68.

124

E. CARTIER, F.R. MCFEELY. Hot-Electron Transport Studies in SiO Using Soft-X Ray Induced Internal Photoemission. In Proceedings: Insulating Films on Semiconductors 1991, Liverpool, 1991, Ed. by W. ECCLESTON, M. UREN, Adam Hilger, pp. 43-51. Proc. INFOS'91.

125

E. CARTIER, F.R. MCFEELY. Hot-Electron Dynamics in SiO studied by Soft-X-Ray-Induced Core-Level Photoemission. Physical Review B, Vol. 44, No. 19, 1991, pp. 10689-10705.

126

M.V. FISCHETTI, S.E. LAUX, D.J. DIMARIA. The Physics of Hot-Electron Degradation of Si MOSFETs: Can We Understand it? Applied Surface Science, Vol. 39, 1989, pp. 578-596.

127

D.J. DIMARIA, T.N. THEIS, J.R. KIRTLEY, F.L. PESAVENTO, D.W. DONG, S.D. BRORSON. Electron Heating in Silicon Dioxide and Off-Stoichiometric Silicon Dioxide Films. Journal of Applied Physics, Vol. 57, No. 4, 1985, pp. 1214-1238.

128

S.D. BRORSON, D.J. DIMARIA, M.V. FISCHETTI, F.L. PESAVENTO, P.M. SOLOMON, D.W. DONG. Direct Measurement of the Energy Distribution of Hot Electrons in Silicon Dioxide. Journal of Applied Physics, Vol. 58, No. 3, 1985, pp. 1302-1313.

129

S.D. PANTELIDES. The Physics of SiO and its Interfaces. Pergamon Press, 1978.

130

H. FRöHLICH. Electrons in Lattice Fields. Advances in Physics, Vol. 3, 1954, pp. 325-361.

131

P. HABAS. Analysis of Physical Effects in Small Silicon MOS Devices. Dissertation, Institut für Mikroelektronik, Technische Universität Wien, 1993.

132

Y. NISSAN-COHEN, J. SHAPPIR, D. FROHMAN-BENTCHKOWSKY. Dynamic Model of Trapping-Detrapping in SiO. Journal of Applied Physics, Vol. 58, No. 6, 1985, pp. 2252-2261.

133

Y. NISSAN-COHEN, J. SHAPPIR, D. FROHMAN-BENTCHKOWSKY. Trap Generation and Occupation Dynamics in SiO under Charge Injection Stress. Journal of Applied Physics, Vol. 60, No. 6, 1986, pp. 2024-2035.

134

D.A. BUCHANAN, D.J. DIMARIA. Interface and Bulk Trap Generation in Metal-Oxide-Semiconductor Capacitors. Journal of Applied Physics, Vol. 67, No. 12, 1990, pp. 7439-7452.

135

D.J. DIMARIA, J.W. STASIAK. Trap Creation in Silicon Dioxide Produced by Hot Electrons. Journal of Applied Physics, Vol. 65, No. 6, 1989, pp. 2342-2356.

136

J.F. ZHANG, S. TAYLOR, W. ECCLESTON. Electron Trap Generation in Thermally Grown SiO under Fowler-Nordheim Stress. Journal of Applied Physics, Vol. 71, No. 2, 1992, pp. 725-734.

137

D.J. DIMARIA, J.H. STATHIS. Trapping and Trap Creation Studies on Nitrided and Reoxidized-Nitrided Silicon Dioxide Films on Silicon. Journal of Applied Physics, Vol. 70, No. 3, 1991, pp. 1500-1509.

138

D.J. DIMARIA, M.V. FISCHETTI, E. TIERNEY, S.D. BRORSON. Direct Observation of the Threshold for Electron Heating in Silicon Dioxide. Phys.Rev.Lett., Vol. 56, No. 12, 1986, pp. 1284-1286.

139

D.J. DIMARIA, M.V. FISCHETTI, J. BATEY, L. DORI, E. TIERNEY, J. STASIAK. Direct Observation of Ballistic Electrons in Silicon Dioxide. Phys.Rev.Lett., Vol. 57, No. 25, 1986, pp. 3213-3216.

140

D.J. DIMARIA, M.V. FISCHETTI. Vacuum Emission of Hot Electrons From Silicon Dioxide at Low Temperatures. Journal of Applied Physics, Vol. 64, No. 9, 1988, pp. 4683-4691.

141

D.J. DIMARIA, M.V. FISCHETTI, M. ARIENZO, E. TIERNEY. Electron Heating Studies in Silicon Dioxide: Low Fields and Thick Films. Journal of Applied Physics, Vol. 60, No. 5, 1986, pp. 1719-1726.

142

F.R. MCFEELY, E. CARTIER, L.J. TERMINELLO, A. SANTONI, M.V. FISCHETTI. Soft-X-Ray-Induced Core-Level Photoemission as a Probe of Hot-Electron Dynamics in SiO. Phys.Rev.Lett., Vol. 65, No. 15, 1990, pp. 1937-1940.

143

R.H. FOWLER, L. NORDHEIM. Electron Emission in Intense Electric Fields. Proc.Roy.Soc.A, Vol. 119, 1928, pp. 173-181.

144

M. LENZINGER, E.H. SNOW. Fowler-Nordheim Tunneling into Thermally Grown SiO. Journal of Applied Physics, Vol. 40, No. 1, 1969, pp. 278-283.

145

T.H. NING, C.M. OSBURN, H.N. YU. Emission Probability of Hot Electrons from Silicon into Silicon Dioxide. Journal of Applied Physics, Vol. 48, No. 1, 1977, pp. 286-293.

146

C.N. BERGLUND, R.J. POWELL. Photoinjection into SiO: Electron Scattering in the Image Force Potential Well. Journal of Applied Physics, Vol. 42, No. 2, 1970, pp. 573-579.

147

J. MASERJIAN, N. ZAMANI. Behavior of the Si/SiO Interface Observed by Fowler-Nordheim Tunneling. Journal of Applied Physics, Vol. 53, No. 1, 1982, pp. 559-567.

148

M.V. FISCHETTI, D.J. DIMARIA, L. DORI, J. BATEY, E. TIERNEY, J. STASIAK. Ballistic Electron Transport in Thin Silicon Dioxide Films. Physical Review B, Vol. 35, No. 9, 1987, pp. 4404-4415.

149

S.N. MOHAMMAD, G. FIORENZA, A. ACOVIC, J.B. JOHNSON, R.L. CARTER. Fowler-Nordheim Tunneling of Carriers in MOS Transistors: Two-Dimensional Simulations of Gate Current Employing FIELDAY. Solid-State Electronics, Vol. 38, No. 4, 1995, pp. 807-814.

150

C. FIEGNA, L. SELMI, E. SANGIORGI. Oxide-Field Dependence of Electron Injection from Silicon into Silicon Dioxide. IEEE Transactions on Electron Devices, Vol. 40, No. 11, 1993, pp. 2018-2022.

151

C. FIEGNA, E. SANGIORGI, L. SELMI. Author's Reply. IEEE Transactions on Electron Devices, Vol. 41, No. 9, 1994, pp. 1681-1683.

152

M.V. FISCHETTI. Comments on ``Oxide-Field Dependence of Electron Injection from Silicon into Silicon Dioxide''. IEEE Transactions on Electron Devices, Vol. 41, No. 9, 1994, pp. 1680-1681.

153

A. PURI, W.L. SCHAICH. Comparison of Image-Potential Theories. Physical Review B, Vol. 28, No. 4, 1983, pp. 1781-1784.

154

C. HUANG, T. WANG, C.N. CHEN, J. FU. Modeling Hot-Electron Gate Currents in Si MOSFETs Using a Coupled Drift-Diffusion and Monte Carlo Method. IEEE Transactions on Electron Devices, Vol. 39, No. 11, 1992, pp. 2562-2568.

155

K.S. WEN, H.-H. LI, C.-Y. WU. A New Gate Current Simulation Technique Considering Si/SiO Interface Trap Generation. Solid-State Electronics, Vol. 38, No. 4, 1995, pp. 851-859.

156

M.V. FISCHETTI, Z.A. WEINBERG, J.A. CALISE. The Effect of Gate Metal and SiO Thickness on the Generation of Donor States at the Si-SiO Interface. Journal of Applied Physics, Vol. 57, No. 2, 1985, pp. 418-425.

157

J.Y. TANG, K. HESS. Theory of Hot Electron Emission from Silicon into Silicon Dioxide. Journal of Applied Physics, Vol. 54, No. 9, 1983, pp. 5145-5151.

158

C. FISCHER, P. HABAS, O. HEINREICHSBERGER, H. KOSINA, PH. LINDORFER, P. PICHLER, H. PöTZL, C. SALA, A. SCHüTZ, S. SELBERHERR, M. STIFTINGER, M. THURNER. MINIMOS 6.0 User's Guide. Technische Universität Wien, 1994.

159

L. SELMI, E. SANGIORGI, R. BEZ, B. RICCò. Measurement of the Hot Hole Injection Probability from Si into SiO in p-MOSFETs. In Proceedings: International Electron Devices Meeting, 1993, pp. 333-336.

160

L. SELMI. Experimental Data for Device NPR5. Private communication, 1995.

161

A. V. SCHWERIN. Experimental Data for a -nMOS Transistor. Private communication, 1995.

162

R.L. KAMOCSAI, W. POROD. Hot Electrons and Traps in a-SiO. Solid-State Electronics, Vol. 32, No. 12, 1989, pp. 1825-1829.

163

R.L. KAMOCSAI, W. POROD. A Monte Carlo Model of Hot Electron Trapping and Detrapping in SiO. Journal of Applied Physics, Vol. 69, No. 4, 1991, pp. 2264-2275.

164

A. VON SCHWERIN. Dissertation. Dissertation, Leopold-Franzens-Universität Innsbruck, 1988.

165

F. WANG, R. SCHWARZ. High-Temperature Annealing Behavior of Products of Electrons and Holes in a-Si:H. Journal of Applied Physics, Vol. 71, No. 2, 1992, pp. 791-795.

166

L. REGGIANI, V. MITIN. Recombination and Ionization Processes at Impurity Centres in Hot-Electron Semiconductor Transport. Rivista del Nuovo Cimento, Vol. 12, No. 11, 1989, pp. 1-90.