| CFL | Courant-Friedrichs-Levy |
| CMOS | Complementary Metal Oxide Semiconductor |
| CVD | Chemical Vapor Deposition |
| DIRECT | Dividing Rectangles |
| DNA | Deoxyribonucleic Acid |
| DOE | Design of Experiments |
| DRAM | Dynamic Random Access Memory |
| EGO | Extensible Genetic Optimizer |
| ELSA | Enhanced Level Set Applications |
| HDP | High Density Plasma |
| HPCVD | High Pressure Chemical Vapor Deposition |
| ILD | Interlevel Dielectric |
| LPCVD | Low Pressure Chemical Vapor Deposition |
| MOS | Metal Oxide Semiconductor |
| MOSFET | Metal Oxide Semiconductor Field Effect Transistor |
| PDE | Partial Differential Equation |
| PECVD | Plasma Enhanced Chemical Vapor Deposition |
| PIF | Profile Interchange Format |
| PVD | Physical Vapor Deposition |
| RSM | Response Surface Methodology |
| SEM | Scanning Electron Microscope |
| SIA | Semiconductor Industry Association |
| SIESTA | Simulation Environment for Semiconductor Technology Analysis |
| SIMS | Secondary Ion Mass Spectrometry |
| SRAM | Static Random Access Memory |
| RTA | Rapid Thermal Annealing |
| TCAD | Technology Computer Aided Design |
| TED | Transient Enhanced Diffusion |
| TEOS | Tetraethoxysilane,
|
| ULSI | Ultra Large Scale Integration |
| VISTA | Viennese Integrated System for TCAD Applications |
| VLSI | Very Large Scale Integration |
Clemens Heitzinger 2003-05-08