| AFM | Atomic Force Microscope |
| ARC | Antireflective Coating |
| ASC | Antiscattering Coating |
| BC | Boundary Condition |
| BVP | Boundary Value Problem |
| BiCMOS | Bipolar Complimentary Metal Oxide Semiconductor |
| CAD | Computer-Aided Design |
| CAR | Chemically Amplified Resists |
| CD | Critical Dimension |
| CEL | Contrast Enhancement Layer |
| CMOS | Complimentary Metal Oxide Semiconductor |
| CPU | Central Processing Unit |
| DOE | Design Of Experiments |
| DQN | Diazonaphthoquinone Novolac |
| DUV | Deep Ultraviolet |
| ECAD | Electronic Computer-Aided Design |
| EM | Electromagnetic |
| EUV | Extreme Ultraviolet |
| FFT | Fast Fourier Transform |
| GB | Giga Byte |
| GUI | Graphical User Interface |
| HMDS | Hexamethyldisilazane |
| IC | Integrated Circuit |
| IPL | Ion Projection Lithography |
| IVP | Initial Value Problem |
| MB | Mega Byte |
| MOS | Metal Oxide Semiconductor |
| NMOS | Negative Metal Oxide Semiconductor |
| ODE | Ordinary Differential Equation |
| OPC | Optical Proximity Correction |
| PAC | Photoactive Compound |
| PAG | Photoacid Generator |
| PDE | Partial Differential Equation |
| PHS | Polyhydroxystyrene |
| PMMA | Polymethyl Methacrylate |
| PSM | Phase-Shifting Mask |
| RSM | Response Surface Modeling |
| SCALPEL | Scattering with Angular Limitation Projection Electron-Beam
Lithography |
| STM | Scanning Tunneling Microscope |
| TCAD | Technology Computer-Aided Design |
| TCC | Transmission Cross Coefficients |
| TE | Transversal-Electric |
| TFT | Thin-Film Transistor |
| TL | Top Layer |
| TM | Transversal-Magnetic |
| UV | Ultraviolet |
| VLSI | Very Large Scale Integration |
| WWW | World Wide Web |
