Eigene Publikationen

P1

M. Knaipp, T. Simlinger, and S. Selberherr.
Analysis of Leakage Currents in Smart Power Devices.
In H. Grünbacher, editor, ESSDERC'96 - Proc. 26th European Solid-State Device Research Conference, Bologna, Italy, pp.645-648 1996. Editions Frontieres.

P2

M. Knaipp, and S. Selberherr.
Investigation on Hydrodynamic Impact Ionization (II) in n-MOSFETs.
In Abstracts Intl. Conf. on Computational Physics, Singapore, pp.37-38, 1997.

P3

M. Knaipp, T. Grasser, and S. Selberherr.
A Physically Based Substrate Current Simulation.
In H. Grünbacher, editor, ESSDERC'97 - Proc. 26th European Solid-State Device Research Conference, Stuttgart, Germany, pp.196-199 1997. Editions Frontieres.

P4

M. Knaipp, and S. Selberherr.
A Physically Based Substrate Current Simulation.
In Proceedings 5th Intl. Conf. on VLSI and CAD, Seoul, Korea, pp.558-560, 1997.

P5

T. Grasser, R. Strasser, M. Knaipp, H. Masuda, and S. Selberherr.
Calibration of a Mobility Model for Quartermicron CMOS Devices.
In Proceedings European Simulation Multiconference ESM 98, Manchester, England, pp.75-77, 1998.

P6

V. Palankovski, M. Knaipp, and S. Selberherr.
Influence of the Material Composition and Doping Profiles on HBTs Device Performance.
In Proceedings IASTED Intl. Conf. on Modelling and Simulation, Pittsburgh, USA, pp.7-10, 1998.

P7

T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, and S. Selberherr.
Device Simulator Calibration for Quartermicron CMOS Devices.
In K. De Mayer, S. Biesemans, editor, SISPAD'98 - Proc. Simulation of Semiconductors Processes and Devices, Leuven, Belgium, pp.93-96, 1998, Springer.

P8

K. Dragosits, M. Knaipp, and S. Selberherr.
Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells.
In K. De Mayer, S. Biesemans, editor, SISPAD'98 - Proc. Simulation of Semiconductors Processes and Devices, Leuven, Belgium, pp.368-371, 1998, Springer.

P9

M. Knaipp, W. Kanert, and S. Selberherr.
Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure.
Submitted to IEEE Trans. Electron Devices.