Symbol | Unit | Description | ||

ms | Hopping rate between two sites | |||

cm | Inverse localization length | |||

s | Attempt to escape frequency | |||

eV | Energy at site | |||

eV | Energy at site | |||

cm | Distance between site and | |||

1 | Occupation probability of site | |||

1 | Occupation probability of site | |||

s | Time | |||

eV | Chemical potential at site | |||

eV | Chemical potential at site | |||

S/cm | Conductivity between sites and | |||

eV | Voltage drop over a single hopping distance | |||

J/K | Boltzmann constant | |||

K | Temperature | |||

eV | Energy drop over a single hopping distance | |||

S/cm | Hopping conductivity | |||

cm | Maximum hopping distance between two sites | |||

eV | Maximum hopping energy of innitial or finial site | |||

cm | Sites density in percolation theory | |||

cm | Bonds density in percolation theory | |||

cmeV | Density of states | |||

1 | Unit step function |

Symbol | Unit | Description | ||

eV | Transport energy | |||

cm | Total hole concentration | |||

cm | Mobile hole concentration | |||

cm | Electron concentration | |||

V | Potential | |||

1 | Fraction of occupied states | |||

cm | Concentration of trap states | |||

S/cm | Critical conductivity in percolation theory | |||

eV | Fermi energy | |||

K | Width of exponetion DOS | |||

eV | Width of Gaussian DOS | |||

1 | Distance vector between sites and | |||

V/m | Electric field | |||

m | Average hopping distance along the electric field | |||

m | Nearest hopping range | |||

eV | Variance of Gaussian DOS | |||

S/cm | Conductivity prefactor in percolation theory | |||

eV | Thermal equilibrium energy of hopping carriers | |||

eV | Activation energy | |||

cm | Total concentration of dopant states | |||

K | Width of exponential DOS for dopants | |||

A/cm | Current density | |||

eV | Barrier height between metal and organic semiconductor | |||

kg | Effective mass | |||

m | Critical distance | |||

Fm | Relative dielectric constant | |||

S/cm | Sheet conductance | |||

A/cm | Drain current density | |||

V | Gate voltage | |||

s | Relaxiation time for hopping transport | |||

Ling Li: Charge Transport in Organic Semiconductor Materials and Devices