next up previous contents
Next: 4.1.1 The Test Device Up: 4. Simulation Application Previous: 4. Simulation Application

4.1 GaAs versus SiGe HBTs

In addition to devices based on III-V semiconductor materials several simulations of SiGe HBTs are performed as well. Simplified device structures are used in the early development of MINIMOS-NT for testing the graded material composition and temperature dependent models of the simulator.



Subsections

Vassil Palankovski
2001-02-28