Several applications of industrial interest employ devices operating in a wide
temperature range. Therefore, our models have been designed to meet this
challenge in addition to the conventional Silicon applications. MINIMOS-NT has
been successfully used for simulation of heterostructure devices, such as HEMTs
and HBTs. Physics-based DC-simulations, mixed-mode device/circuit simulations,
small-signal RF-parameter simulations, and device reliability investigations of
high practical value were performed.
In the thesis, simulation results for several different types of GaAs-based and Si-based HBTs demonstrating the extended capabilities of MINIMOS-NT are shown, most of them in comparison with experimental data. Special emphasis is put on the simulation of high-power AlGaAs/GaAs and InGaP/GaAs HBTs. Two-dimensional DC-simulations of four different types of one-finger devices in very good agreement with measured data in a wide temperature range are demonstrated. Self-heating effects are accounted for the output device characteristics. The work is extended with transient simulation of small-signal parameters to connect DC- and RF-operation. A comparison between simulated and measured S-parameters is presented. Device reliability investigations which confirm the usefulness of device simulation for practical applications are also offered. In particular, the influence of the InGaP ledge on the device performance of InGaP/GaAs-HBTs is analyzed. Examples of SiGe HBTs and polysilicon emitter BJT conclude the work presented in the thesis.