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| AlN | ... | Aluminum nitride |
|---|---|---|
| ASIPM | ... | Application specific IPM |
| BJT | ... | Bipolar junction transistor |
| BiCMOS | ... | Bipolar CMOS |
| BTE | ... | Boltzmann transport equation |
| BV | ... | Breakdown voltage |
| CMOS | ... | Complementary MOS |
| DC | ... | Direct current |
| DMOS | ... | Double diffused MOS |
| DGLILET | ... | Double gate lateral inversion layer emitter transistor |
| DMOSFET | ... | Double-diffused MOS transistor |
| FACT | ... | Flexible AC transmission |
| FBSOA | ... | Forward biased safe operating area |
| FG-LDMOST | ... | Folded gate LDMOSFET |
| FOX | ... | Field oxide |
| GaN | ... | Gallium nitride |
| GTO | ... | Gate turn-off thyristor |
| HD | ... | Hydrodynamic |
| HV | ... | High-voltage |
| HVDC | ... | High-voltage direct current |
| HVIC | ... | High-voltage IC |
| IC | ... | Integrated circuit |
| IEGT | ... | Injection-enhanced gate transistor |
| IGBT | ... | Insulated gate bipolar transistor |
| IPM | ... | Intelligent power module |
| IV | ... | Current voltage |
| JFET | ... | Junction field-effect transistor |
| JI | ... | Junction isolation |
| LDD | ... | Lightly doped drain |
| LDMOSFET | ... | Lateral double diffused MOS transistor |
| LIGBT | ... | Lateral IGBT |
| LMCT | ... | Lateral MCT |
| LUDMOSFET | ... | Lateral U-diode MOSFET |
| LV | ... | Low-voltage |
| MCT | ... | MOS-controlled thyristor |
|---|---|---|
| MM6 | ... | MINIMOS mobility model |
| MOS | ... | Metal-oxide semiconductor |
| MOSFET | ... | Metal-oxide semiconductor field-effect transistor |
| NMOS | ... |  -channel MOS |
| PIC | ... | Power IC |
| PMOS | ... |  -channel MOS |
| P-SOI | ... | Partial-SOI |
| RESURF | ... | Reduced surface field |
| RF | ... | Radio frequency |
| SA-LIGBT | ... | Shorted-anode LIGBT |
| SCR | ... | Silicon controlled rectifier |
| SIT | ... | Static induction transistor |
| SiC | ... | Silicon carbide |
| SiN | ... | Silicon nitride |
| SJ | ... | Super-junction |
| SMPS | ... | Switch-mode power supply |
| SOA | ... | Safe operating area |
| SOI | ... | Silicon on insulator |
| SRH | ... | Shockley-Read-Hall |
| TCAD | ... | Technology computer aided design |
| TLPM/S | ... | Trench lateral power MOSFETs with a trench bottom source contact |
| ULSI | ... | Ultra large scale integration |
| UMOSFET | ... | U-shape metal-oxide semiconductor field-effect transistor |
| UPS | ... | Uninterruptible power supply |
| VCR | ... | Videocassette recorder |
| VDMOSFET | ... | Vertical DMOSFET |
| VLSI | ... | Very large scale integration |
Jong-Mun Park 2004-10-28