Publications in Conference Proceedings

C01

E. Ungersboeck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, and S. Selberherr, "Optimization of Carbon Nanotube Field Effect Transistors," in Proceedings of the Symposium on Nano Device Technology, (Hsinchu), pp. 117-120, 2004.
Talk: Symposium on Nano Device Technology (SNDT).

C02

M. Pourfath, E. Ungersboeck, A. Gehring, B.-H. Cheong, H. Kosina, and S. Selberherr, "Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors," in Simulation of Semiconductor Processes and Devices 2004, (Munich), pp. 149-152, Springer, 2004.
Talk: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD).

C03

M. Pourfath, E. Ungersboeck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, and S. Selberherr, "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors," in Nano and Giga Challenges in Microelectronics Book of Abstracts, (Krakau), p. 201, 2004.
Talk: Nano and Giga Challenges in Microelectronics (NGCM).

C04

M. Pourfath, E. Ungersboeck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, and S. Selberherr, "Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors," in Proceeding of the 34th European Solid-State Device Research Conference, (Leuven), pp. 429-432, IEEE, 2004.
Talk: European Solid-State Device Research Conference (ESSDERC).

C05

M. Pourfath, E. Ungersboeck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, and S. Selberherr, "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors," in $\mathrm{10^{th}}$ International Workshop on Computational Electronics Book Abstracts, (West Lafayette), pp. 237-238, 2004.
Poster: International Workshop on Computational Electronics (IWCE).

C06

M. Pourfath, B.-H. Cheong, W. Park, H. Kosina, and S. Selberherr, "High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration," in ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference, (Bologna), pp. 95-98, 2005.
Talk: International Conference on Ultimate Integration of Silicon (ULIS).

C07

M. Pourfath, A. Gehring, B. Cheong, W. Park, H. Kosina, and S. Selberherr, "Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration," in NSTI Nanotech Technical Proceedings, vol. 3, (Anaheim), pp. 128-131, 2005.
Talk: The Nanotechnology Conference and Trade Show.

C08

M. Pourfath, B. Cheong, H. Kosina, and S. Selberherr, "Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors," in 5th International Conference on Large-Scale Scientific Computations, no. 50-51, (Sozopol), 2005.
Talk: International Conference on Large-Scale Scientific Computations (LSSC).

C09

M. Pourfath, H. Kosina, B.-H. Cheong, W. Park, and S. Selberherr, "The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors," in Proceedings of the 2005 5th IEEE Conference on Nanotechnology, (Nagoya), 2005.
Talk: 5th IEEE Conference on Nanotechnology (IEEE-Nano).

C10

M. Pourfath, B.-H. Cheong, W. Park, and H. Kosina, "Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistors," in Simulation of Semiconductor Processes and Devices 2005, (Tokyo), pp. 91-94, 2005.
Talk: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD).

C11

M. Pourfath, H. Kosina, B. Cheong, W. Park, and S. Selberherr, "Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors," in Proceeding of the 35th European Solid-State Device Research Conference, (Grenoble), pp. 541-544, 2005.
Talk: European Solid-State Device Research Conference (ESSDERC).

C12

M. Pourfath, H. Kosina, and S. Selberherr, "On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors," in Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006, 2006.
Oral: Iranian Conference on Electrical Engineering (ICEE).

C13

M. Pourfath, H. Kosina, and S. Selberherr, "Tunneling CNTFETs," in 11th International Workshop on Computational Electronics Book of Abstracts, (Vienna), pp. 291-292, 2006.
Poster: International Workshop on Computational Electronics (IWCE).

C14

M. Pourfath, H. Kosina, and S. Selberherr, "Dissipative Transport in CNTFETs," in 11th International Workshop on Computational Electronics Abstracts, (Vienna), pp. 345-346, 2006.
Oral: International Workshop on Computational Electronics (IWCE).

C15

M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, and S. Selberherr, "VSP-A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications," in 11th International Workshop on Computational Electronics Abstracts, (Vienna), pp. 255-256, 2006.
Poster: International Workshop on Computational Electronics (IWCE).

C16

M. Pourfath, H. Kosina, , and S. Selberherr, "Optimizing the Performance of Carbon Nanotube Transistors," in Sixth IEEE Conference on Nanotechnology, vol. 2, (Cincinnati), pp. 520-523, 2006.
Poster: IEEE Conference on Nanotechnology (IEEE-NANO).

C17

M. Pourfath and H. Kosina, "On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors," in Proceedings Trends in Nanotechnology, (Grenoble), p. 2 pages, 2006.
Poster: Trends in Nanotechnology Conference (TNT).

C18

M. Pourfath, H. Kosina, B.-H. Cheong, and J. Park, "The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs," in International Conference on Simulation of Semiconductor Processes and Devices 2006, (Monterey), pp. 208-211, 2006.
Poster: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD).

C19

M. Pourfath, H. Kosina, and S. Selberherr, "Optimal Design for Carbon Nanotube Transistors," in Proceedings of the 36th European Solid-State Device Research Conference, (Montreux), pp. 210-213, 2006.
Talk: European Solid-State Device Research Conference (ESSDERC).

C20

M. Pourfath, H. Kosina, and S. Selberherr, "A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters," in International Electron Devices Meeting 2006 Technical Digest, (San Francisco), pp. 31.5.1-31.5.4, 2006.
Talk: International Electron Devices Meeting (IEDM).

C21

M. Pourfath, H. Kosina, and S. Selberherr, "Carbon Nanotube Based Transistors: A Computational Study," in Physics of Semiconductors: 28 International Conference on the Physics of Semiconductors - ICPS 2006, vol. 893 of American Institute of Physics Conference Series, pp. 1041-1042, 2007.

C22

O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, and H. Kosina, "Adaptive Energy Integration of Non-Equilibrium Green's Function," in NSTI Nanotech Technical Proceedings, vol. 3, (Santa Clara), pp. 145-148, 2007.
Poster: The Nanotechnology Conference and Trade Show.

C23

M. Pourfath and H. Kosina, "The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNTFETs," 2007 accepted.
Poster: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD).

C24

M. Pourfath, H. Kosina, and S. Selberherr, "The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FET," 2007 accepted.
Talk: European Solid-State Device Research Conference (ESSDERC). M. Pourfath: Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors


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