| AP |
... |
Acoustic phonons |
| CMOS |
... |
Complementary MOS |
| CNT |
... |
Carbon nanotube |
| CNT-FET |
... |
Carbon nanotube FET |
| CVD |
... |
Chemical vapor deposition |
| DG |
... |
Double-gate |
| DOS |
... |
Density of states |
| FET |
... |
Field-effect transistor |
| ITRS |
... |
International Technology Roadmap for Semiconductors |
| MOS |
... |
Metal-oxide-semiconductor |
| MOSFET |
... |
MOS field-effect transistor |
| NEGF |
... |
Non-equilibrium GREEN's function |
| OP |
... |
Optical phonons |
| RBM |
... |
Radial breathing mode |
| SEM |
... |
Scanning electron microscopy |
| SB |
... |
SCHOTTKY barrier |
| SG |
... |
Single-gate |
| TB |
... |
Tight-binding |
| VSP |
... |
VIENNA SCHRÖDINGER-POISSON solver |
| SW-CNT |
... |
Single wall CNT |
| MW-CNT |
... |
Multi wall CNT |
