Physical Quantities

Symbol		Unit		Description
$\ensuremath {\mathrm{q}}\chi_\mathrm{CNT}$		eV		Electron affinity of a CNT
$\ensuremath {\mathrm{q}}\Phi_\mathrm{CNT}$		eV		Work function of a CNT
$\ensuremath {\mathrm{q}}\Phi_\mathrm{M}$		eV		Work function of the metal
$\ensuremath {\mathrm{q}}\Phi_\mathrm{Be}$		eV		Energy barrier height for electrons
$\ensuremath {\mathrm{q}}\Phi_\mathrm{Bh}$		eV		Energy barrier height for holes
$\phi$		V		Electrostatic potential
$\hbar \omega$		eV		Phonon energy
$D_\mathrm{OP}$		eV$^2$		Electron-optical-phonon coupling coefficient
$D_\mathrm{AP}$		eV$^2$		Electron-acoustic-phonon coupling coefficient
$E$		eV		Energy
$E_\mathrm{f}$		eV		FERMI energy
$E_\mathrm{c}$		eV		Conduction band edge energy
$E_\mathrm{v}$		eV		Valence band edge energy
$E_\mathrm{g}$		eV		Band gap energy
$E_\mathrm{i}$		eV		Intrinsic energy
$g$		m$^{-1}$eV$^{-1}$		Density of states
$\mathbf{J}$		A		Current
$k$		m$^{-1}$		Wave number
$\mathbf{k}$		m$^{-1}$		Wave number vector
$\varepsilon$		AsV$^{-1}$m$^{-1}$		Dielectric permittivity
$L_\mathrm{GS}$		m		Gate-source spacer length
$L_\mathrm{DS}$		m		Drain-source space length
$m$		kg		Mass
$\widetilde{M}_\mathrm{OP}$		eV/Å		Reduced matrix elements of electron-optical-phonon interaction
$\widetilde{M}_\mathrm{AP}$		eV		Reduced matrix elements of electron-acoustic-phonon interaction
$n_\mathrm{B}$		1		Bose-EINSTEIN distribution function
$n_\mathrm{F}$		1		FERMI-DIRAC distribution function
$n$		m$^{-1}$		Electron concentration
$p$		m$^{-1}$		Hole concentration
$\ensuremath {N_\mathrm{D}}$		m$^{-1}$		Concentration of donors
$\ensuremath {N_\mathrm{A}}$		m$^{-1}$		Concentration of acceptors
$\mathbf{r}$		m		Space vector
$\varrho$		m$^{-1}$		Carrier concentration
$t$		s		Time
$T$		K		Temperature
$U$		eV		Potential energy
$V_\mathrm{GS}$		V		Gate-source voltage
$V_\mathrm{DS}$		V		Drain-source voltage

M. Pourfath: Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors