3.1 Diffusion in Silicon

  Diffusion in silicon is directly associated with native point-defects and impurity-related defects. Impurity related defects arise from the introduction of group-III elements or group-V elements into the silicon lattice. Their most important properties are that they are highly soluble in silicon, dissolve almost and completely on substitutional lattice sites and are easily ionized. Native point-defects are existing in the pure silicon lattice. The most basic ones are vacancies (V) and interstitials (I), although more complex combinations (such as V-V pairs) are also possible. Every material transport in silicon like self- and dopant diffusion is influenced by point-defects. Therefore, a thorough knowledge of the properties of the point-defects is essential.

• 3.1.1 Intrinsic Point Defects
• 3.1.2 Sources and Sinks for Point Defects
• 3.1.3 Intrinsic Dopant Diffusion
• 3.1.4 Extrinsic Dopant Diffusion
• 3.1.5 High Concentration Effects