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2.4 The RF-Silicon and Silicon Germanium Devices

The enormous economic momentum of Complementary Metal Oxide Semiconductor (CMOS) technologies based on Si and related technologies now addresses analog and mixed-signal RF applications. It is to be expected that everything that can be done in silicon and related technologies will be done using CMOS technologies due to the integration capability and the large scale process with 12 inch substrates available. Alternatives using other materials than Si must demonstrate significantly superior performance to cope with this capability. For an overview, see [177].