List of Symbols

$\alpha$	...	Exponent
$\alpha_n$,$\alpha_p$	...	Impact ionization rate for electrons and holes
$\beta$	...	Exponent
${\it BV}_{\mathrm{CE0}}$	...	Collector emitter breakdown voltage
${\it BV}_{\mathrm{DS}}$	...	On-state breakdown voltage
${\it BV}_{\mathrm{DS RF}}$	...	Large signal on-state breakdown voltage
${\it BV}_{\mathrm{GD}}$	...	Gate drain diode breakdown voltage
${\it BV}_{\mathrm{GS}}$	...	Gate source diode breakdown voltage
${\it BV}_{\mathrm{i}}$	...	Breakdown voltage
$c$	...	Speed of light in vacuum
$C$	...	Net doping concentration
${\it C}_{\mathrm{fringe}}$	...	Fringe contribution to a capacitance
${\it C}_{\mathrm{g}}$	...	Total gate capacitance
${\it C}_{\mathrm{ds}}$	...	Drain source capacitance
${\it C}_{\mathrm{gd}}$	...	Gate drain capacitance
${\it C}_{\mathrm{gs}}$	...	Gate source capacitance
${\it C}_{\mathrm {im}}$	...	Additional capacitance due to impact ionization
${\it C}_{\mathrm {IN}}$	...	Parasitic input capacitance
${\it C}_{\mathrm {L}}$	...	Load impedance
${\it C}_{\mathrm {met}}$	...	Metal contribution to a capacitance
$C_{m \nu}$	...	Effective carrier mass bowing parameter of carrier $\nu$
$C_{\mu}$	...	Mobility bowing parameter
$C^{Au}_{\nu}$	...	Auger coefficients
${\it c}_{\mathrm{n}}$	...	Heat capacity of the electron gas
${\it C}_{\mathrm {OUT}}$	...	Parasitic output capacitance
${\it c}_{\mathrm{p}}$	...	Heat capacity of the hole gas
${\it C}_{\mathrm{pad}}$	...	Parasitic pad capacitance
${\it C}_{\mathrm{pass}}$	...	Contribution to a capacitance due to passivation
${\it C}_{\mathrm{pds}}$	...	Parasitic drain source capacitance
${\it C}_{\mathrm{pgs}}$	...	Parasitic gate source capacitance
${\it C}_{\mathrm{semi}}$	...	Semiconductor contribution to a capacitance
${\it C}_{\mathrm{traps}}$	...	Frequency dispersive contribution to ${\it C}_{\mathrm{gs}}$
${\mathbf D}$	...	Dielectric flux
$\Delta$	...	Step, change, difference
${\it d}_\mathrm{DR}$	...	Length double recess
$\delta E_{\nu}$	...	Effective tunneling correction
${\it d}_\mathrm{eff}$	...	Effective gate-to-channel separation
${\it d}_\mathrm{gc}$	...	Gate-to-channel separation
${\it d}_\mathrm{GG}$	...	Gate gate pitch
${\it d}_\mathrm{R}$	...	Recess length
$\varepsilon$	...	Dielectric constant
${\it\varepsilon}_\mathrm{r}$	...	Relative dielectric constant
${\mathbf{E}}$	...	Electric field
$E^{crit}$	...	Critical field
$E_{crit}$	...	Critical field for the onset of saturation
$E_{F}$	...	Fermi energy
${\it E}_\mathrm{g}$	...	Band gap energy
$E_\mathrm {gate}$	...	Effective field at the gate
${\it E}_\mathrm{g,0}$, ${\it E}_\mathrm{g,300}$	...	Band gap energy at T= 0 K, and at ${\it T}_\mathrm{L}$= 300 K
$E_{i}$	...	Threshold energy
${\it E}_\mathrm{off}$	...	Energy offset
$E_{r,0}$	...	Energy loss per scattering at reference temperature
$E_{0}$	...	Minimum energy
$E_{T}$	...	Trap energy
$E_{V}$	...	Valence band energy
$E_{W}$	...	Workfunction energy difference
${\it f}$	...	Frequency
${\it f}_\mathrm{c}$	...	Frequency for k = 1
${\it f}_\mathrm{max}$	...	Maximum frequency of oscillation
$F_n$, $F_p$	...	Driving force for electrons and holes
${\it F}_{\mathrm{min}}$	...	Minimum noise figure
${\it f}_\mathrm{T}$	...	Current gain cut-off frequency
${\it g}_{\mathrm{ds}}$	...	Output conductance
${\it g}_{\mathrm{ds,ext}}$	...	Extrinsic output conductance
${\mit g}_{\mathrm{m}}$	...	Transconductance
${\mit g}_{\mathrm{mi}}$	...	Intrinsic transconductance
${\it g}_{\mathrm{m im}}$	...	Transconductance due to impact ionization
${\it g}_{\mathrm{m,max}}$	...	Maximum transconductance
${\it G}_{\mathrm{\nu}}$	...	Generation rate
$\gamma$	...	Exponent in mobility models
$h$	...	Plank constant
$H$	...	Heat generation
${\it I}_{\mathrm{D}}$	...	Drain current
${\it I}_{\mathrm{Dmax}}$	...	Maximum drain current
${\it I}_{\mathrm{DS}}$	...	Drain source current
${\it I}_{\mathrm{G}}$	...	Gate current
$I_\mathrm {II}$	...	Impact ionization contribution to the gate current
$I_\mathrm {TFE}$	...	Thermionic field emission contribution to the gate current
${\mathbf{J}}_{\mathrm{n}}$, ${\mathbf{J}}_{\mathrm{p}}$	...	Current densities for electrons and holes
${\it k}_{\mathrm{B}}$	...	Boltzmann constant
${\it k}$	...	Stability factor
$\kappa_\nu$	...	Carrier thermal conductivity
$\lambda_0$	...	Mean free path for the optical phonon
$\lambda_B$	...	De Broglie wave length
${\it l}_{\mathrm{Co}}$	...	Length contact to recess
${\it l}_{\mathrm{g}}$	...	Gate length
${\it L}_{\mathrm{S}}$	...	Source inductance
${\it ME}$	...	Modulation efficiency
$\mu^L$	...	Mobility corrected by lattice scattering
$\mu^{LI}$	...	Mobility corrected by lattice and impurity scattering
$\mu^{LIF}$	...	High field mobility
$\mu_\nu^{{min}}$	...	Minimum mobility
${\it m}_{\mathrm{n}}$	...	Relative mass electron
$m^*$	...	Effective carrier mass
$\mu_\nu$	...	Mobility of the carrier $\nu$
$m_{0}$	...	Free electron mass
${\it m}_{\mathrm{p}}$	...	Relative mass hole
${\it MSA}$	...	Measure of sampling adequacy
${\it m}_{\mathrm{t}}$	...	Effective tunneling mass
${\it N}_{\mathrm{A}}$	...	Acceptor concentration
$n$	...	Electron concentration
${\it n}_{\mathrm{ac}}$	...	Active doping concentration
${\mathbf{n}}$	...	Normal vector
${\it N}_{\mathrm{C}}$	...	Effective density of states for electrons
${\it n}_{\mathrm{c}}$	...	Reference charge
${\it N}_{\mathrm{D}}$	...	Donator concentration
${\it n}_{\mathrm{i}}$	...	Intrinsic concentration
${\it n}_{\mathrm{nom}}$	...	Nominal doping concentration
$n_0$	...	Equilibrium concentration at contact
${\it n}_{\mathrm{sheet}}$	...	Channel sheet charge density
${\it N}_{\mathrm{T}}$	...	Trap concentration
${\it N}_{\mathrm{V}}$	...	Effective density of states for holes
PAE	...	Power Added Efficiency
$p$	...	Hole concentration
$p_0$	...	Equilibrium concentration
$\phi_B$	...	Barrier height
$\psi_{bi}$	...	Built-in potential
${\it P}_{\mathrm{diss}}$	...	Dissipated power
${\it P}_{\mathrm{in}}$	...	Input power
${\it P}_{\mathrm{out}}$	...	Output power
$\psi$	...	Electrostatic potential
${\it P}_{\mathrm{sat}}$	...	Saturated output power
$q$	...	Elementary charge
$R$	...	Net recombination rate
$R^{Au}$	...	Auger generation/recombination rate
${\it R}_{\mathrm{D}}$	...	Drain resistance
${\it R}_{\mathrm{ds}}$	...	Drain source resistance
${\it R}_{\mathrm{G}}$	...	Gate resistance
${\it R}_{\mathrm{gd}}$	...	Gate drain resistance
${\it R}_{\mathrm{gs}}$	...	Gate source resistance
$R^{II}$	...	Impact ionization generation rate
${\it R}_{\mathrm{im}}$	...	Impact ionization resistance
${\it R}_{\mathrm{L}}$	...	Load resistance
${\it R}_{\mathrm{pgs}}$	...	Gate leakage resistance source side
${\it R}_{\mathrm{pgd}}$	...	Gate leakage resistance drain side
$\rho$	...	Mass density
$\rho_{ij}$	...	Elements of the correlation matrix
${\it R}_{\mathrm{S}}$	...	Source resistance
$R^{\mathrm{SRH}}$	...	Shockley-Read-Hall recombination rate
${\it R}_{\mathrm{th}}$	...	Thermal resistance
$\sigma$	...	Interface charge density
$\sigma_T$	...	Trap capture cross section
$S_{ij}$	...	Scattering parameter, i,j=1,2
$s_{i}$	...	Variance
$S_{L}$	...	Lattice heat flux density
$S_n$,$S_p$	...	Surface recombination velocities
$\mathbf{S}_n$, $\mathbf{S}_p$	...	Electron and hole energy flux density
$S_{V,1/f,lin}$	...	Noise voltage spectrum, linear approximation
$t$	...	Time
${\it\tau}_{\mathrm{CS}}$	...	Delay time current switch
${\it T}_\mathrm{C}$	...	Contact temperature
$\tau_{ext}$	...	Extrinsic delay time
${\it\tau}_{\mathrm{i}}$	...	Intrinsic delay time
${\it\tau}_{\mathrm{ind}}$	...	Inductive delay time
${\it T}_\mathrm{L}$	...	Lattice temperature
$\tau_n$, $\tau_p$	...	Recombination lifetimes for electrons and holes
${\it T}_\mathrm{n}$	...	Electron temperature
${\it T}_\mathrm{\nu}$	...	Carrier temperature
${\it T}_\mathrm{p}$	...	Hole temperature
${\it\tau}_{\mathrm{port}}$	...	Port extension
${\it\tau }$	...	Phase term of the transconductance ${\mit g}_{\mathrm{m}}$
${\it\tau}_{\mathrm{SF}}$	...	Delay time source follower
${\it T}_{\mathrm{sub}}$	...	Substrate temperature
$\tau_t$	...	Time constant trap
${\it\tau}_{{w,n}}$	...	Electron energy relaxation time
${\it\tau}_{{w,p}}$	...	Hole energy relaxation time
$u$	...	Carrier energy relative to the threshold energy $E_i$
${\it U}$	...	Unilateral gain
${\it V}_{\mathrm{bar}}$	...	Equivalent potential barrier height
${\it V}_{\mathrm{D}}$	...	Drain potential
$V_{dd}$	...	Operating voltage CMOS
${\it V}_{\mathrm{DS}}$	...	Drain source voltage
${\it v}_{\mathrm{eff}}$	...	Effective carrier velocity
${\it v}_{\mathrm{eff,het}}$	...	Effective carrier velocity in the presence of heterointerfaces
${\it V}_{\mathrm{G}}$	...	Gate potential
${\it V}_{\mathrm{GD}}$	...	Gate drain voltage
${\it V}_{\mathrm{GS}}$	...	Gate source voltage
${\it v}_{\mathrm{max}}$	...	Maximum carrier velocity
$v_{n,p}$	...	Recombination velocity for electrons and holes
${\it v}_{{sat}}$	...	Saturation velocity
${\it V}_{\mathrm{T}}$	...	Threshold voltage
${\it W}_{\mathrm{g}}$	...	Gate width
${\it x}_{\mathrm{tun}}$	...	Effective tunneling length