... | Exponent | |

, | ... | Impact ionization rate for electrons and holes |

... | Exponent | |

... | Collector emitter breakdown voltage | |

... | On-state breakdown voltage | |

... | Large signal on-state breakdown voltage | |

... | Gate drain diode breakdown voltage | |

... | Gate source diode breakdown voltage | |

... | Breakdown voltage | |

... | Speed of light in vacuum | |

... | Net doping concentration | |

... | Fringe contribution to a capacitance | |

... | Total gate capacitance | |

... | Drain source capacitance | |

... | Gate drain capacitance | |

... | Gate source capacitance | |

... | Additional capacitance due to impact ionization | |

... | Parasitic input capacitance | |

... | Load impedance | |

... | Metal contribution to a capacitance | |

... | Effective carrier mass bowing parameter of carrier | |

... | Mobility bowing parameter | |

... | Auger coefficients | |

... | Heat capacity of the electron gas | |

... | Parasitic output capacitance | |

... | Heat capacity of the hole gas | |

... | Parasitic pad capacitance | |

... | Contribution to a capacitance due to passivation | |

... | Parasitic drain source capacitance | |

... | Parasitic gate source capacitance | |

... | Semiconductor contribution to a capacitance | |

... | Frequency dispersive contribution to | |

... | Dielectric flux | |

... | Step, change, difference | |

... | Length double recess | |

... | Effective tunneling correction | |

... | Effective gate-to-channel separation | |

... | Gate-to-channel separation | |

... | Gate gate pitch | |

... | Recess length | |

... | Dielectric constant | |

... | Relative dielectric constant | |

... | Electric field | |

... | Critical field | |

... | Critical field for the onset of saturation | |

... | Fermi energy | |

... | Band gap energy | |

... | Effective field at the gate | |

, | ... | Band gap energy at T= 0 K, and at = 300 K |

... | Threshold energy | |

... | Energy offset | |

... | Energy loss per scattering at reference temperature | |

... | Minimum energy | |

... | Trap energy | |

... | Valence band energy | |

... | Workfunction energy difference | |

... | Frequency | |

... | Frequency for k = 1 | |

... | Maximum frequency of oscillation | |

, | ... | Driving force for electrons and holes |

... | Minimum noise figure | |

... | Current gain cut-off frequency | |

... | Output conductance | |

... | Extrinsic output conductance | |

... | Transconductance | |

... | Intrinsic transconductance | |

... | Transconductance due to impact ionization | |

... | Maximum transconductance | |

... | Generation rate | |

... | Exponent in mobility models | |

... | Plank constant | |

... | Heat generation | |

... | Drain current | |

... | Maximum drain current | |

... | Drain source current | |

... | Gate current | |

... | Impact ionization contribution to the gate current | |

... | Thermionic field emission contribution to the gate current | |

, | ... | Current densities for electrons and holes |

... | Boltzmann constant | |

... | Stability factor | |

... | Carrier thermal conductivity | |

... | Mean free path for the optical phonon | |

... | De Broglie wave length | |

... | Length contact to recess | |

... | Gate length | |

... | Source inductance | |

... | Modulation efficiency | |

... | Mobility corrected by lattice scattering | |

... | Mobility corrected by lattice and impurity scattering | |

... | High field mobility | |

... | Minimum mobility | |

... | Relative mass electron | |

... | Effective carrier mass | |

... | Mobility of the carrier | |

... | Free electron mass | |

... | Relative mass hole | |

... | Measure of sampling adequacy | |

... | Effective tunneling mass | |

... | Acceptor concentration | |

... | Electron concentration | |

... | Active doping concentration | |

... | Normal vector | |

... | Effective density of states for electrons | |

... | Reference charge | |

... | Donator concentration | |

... | Intrinsic concentration | |

... | Nominal doping concentration | |

... | Equilibrium concentration at contact | |

... | Channel sheet charge density | |

... | Trap concentration | |

... | Effective density of states for holes | |

PAE | ... | Power Added Efficiency |

... | Hole concentration | |

... | Equilibrium concentration | |

... | Barrier height | |

... | Built-in potential | |

... | Dissipated power | |

... | Input power | |

... | Output power | |

... | Electrostatic potential | |

... | Saturated output power | |

... | Elementary charge | |

... | Net recombination rate | |

... | Auger generation/recombination rate | |

... | Drain resistance | |

... | Drain source resistance | |

... | Gate resistance | |

... | Gate drain resistance | |

... | Gate source resistance | |

... | Impact ionization generation rate | |

... | Impact ionization resistance | |

... | Load resistance | |

... | Gate leakage resistance source side | |

... | Gate leakage resistance drain side | |

... | Mass density | |

... | Elements of the correlation matrix | |

... | Source resistance | |

... | Shockley-Read-Hall recombination rate | |

... | Thermal resistance | |

... | Interface charge density | |

... | Trap capture cross section | |

... | Scattering parameter, i,j=1,2 | |

... | Variance | |

... | Lattice heat flux density | |

, | ... | Surface recombination velocities |

, | ... | Electron and hole energy flux density |

... | Noise voltage spectrum, linear approximation | |

... | Time | |

... | Delay time current switch | |

... | Contact temperature | |

... | Extrinsic delay time | |

... | Intrinsic delay time | |

... | Inductive delay time | |

... | Lattice temperature | |

, | ... | Recombination lifetimes for electrons and holes |

... | Electron temperature | |

... | Carrier temperature | |

... | Hole temperature | |

... | Port extension | |

... | Phase term of the transconductance | |

... | Delay time source follower | |

... | Substrate temperature | |

... | Time constant trap | |

... | Electron energy relaxation time | |

... | Hole energy relaxation time | |

... | Carrier energy relative to the threshold energy | |

... | Unilateral gain | |

... | Equivalent potential barrier height | |

... | Drain potential | |

... | Operating voltage CMOS | |

... | Drain source voltage | |

... | Effective carrier velocity | |

... | Effective carrier velocity in the presence of heterointerfaces | |

... | Gate potential | |

... | Gate drain voltage | |

... | Gate source voltage | |

... | Maximum carrier velocity | |

... | Recombination velocity for electrons and holes | |

... | Saturation velocity | |

... | Threshold voltage | |

... | Gate width | |

... | Effective tunneling length |

2001-12-21