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List of Symbols


$ \alpha$ ... Exponent
$ \alpha_n$,$ \alpha_p$ ... Impact ionization rate for electrons and holes
$ \beta$ ... Exponent
$ {\it BV}_{\mathrm{CE0}}$ ... Collector emitter breakdown voltage
$ {\it BV}_{\mathrm{DS}}$ ... On-state breakdown voltage
$ {\it BV}_{\mathrm{DS RF}}$ ... Large signal on-state breakdown voltage
$ {\it BV}_{\mathrm{GD}}$ ... Gate drain diode breakdown voltage
$ {\it BV}_{\mathrm{GS}}$ ... Gate source diode breakdown voltage
$ {\it BV}_{\mathrm{i}}$ ... Breakdown voltage
$ c$ ... Speed of light in vacuum
$ C$ ... Net doping concentration
$ {\it C}_{\mathrm{fringe}}$ ... Fringe contribution to a capacitance
$ {\it C}_{\mathrm{g}}$ ... Total gate capacitance
$ {\it C}_{\mathrm{ds}}$ ... Drain source capacitance
$ {\it C}_{\mathrm{gd}}$ ... Gate drain capacitance
$ {\it C}_{\mathrm{gs}}$ ... Gate source capacitance
$ {\it C}_{\mathrm {im}}$ ... Additional capacitance due to impact ionization
$ {\it C}_{\mathrm {IN}}$ ... Parasitic input capacitance
$ {\it C}_{\mathrm {L}}$ ... Load impedance
$ {\it C}_{\mathrm {met}}$ ... Metal contribution to a capacitance
$ C_{m \nu}$ ... Effective carrier mass bowing parameter of carrier $ \nu$
$ C_{\mu}$ ... Mobility bowing parameter
$ C^{Au}_{\nu}$ ... Auger coefficients
$ {\it c}_{\mathrm{n}}$ ... Heat capacity of the electron gas
$ {\it C}_{\mathrm {OUT}}$ ... Parasitic output capacitance
$ {\it c}_{\mathrm{p}}$ ... Heat capacity of the hole gas
$ {\it C}_{\mathrm{pad}}$ ... Parasitic pad capacitance
$ {\it C}_{\mathrm{pass}}$ ... Contribution to a capacitance due to passivation
$ {\it C}_{\mathrm{pds}}$ ... Parasitic drain source capacitance
$ {\it C}_{\mathrm{pgs}}$ ... Parasitic gate source capacitance
$ {\it C}_{\mathrm{semi}}$ ... Semiconductor contribution to a capacitance
$ {\it C}_{\mathrm{traps}}$ ... Frequency dispersive contribution to $ {\it C}_{\mathrm{gs}}$
$ {\mathbf D}$ ... Dielectric flux
$ \Delta$ ... Step, change, difference
$ {\it d}_\mathrm{DR}$ ... Length double recess
$ \delta E_{\nu}$ ... Effective tunneling correction
$ {\it d}_\mathrm{eff}$ ... Effective gate-to-channel separation
$ {\it d}_\mathrm{gc}$ ... Gate-to-channel separation
$ {\it d}_\mathrm{GG}$ ... Gate gate pitch
$ {\it d}_\mathrm{R}$ ... Recess length
$ \varepsilon$ ... Dielectric constant
$ {\it\varepsilon}_\mathrm{r}$ ... Relative dielectric constant
$ {\mathbf{E}}$ ... Electric field
$ E^{crit}$ ... Critical field
$ E_{crit}$ ... Critical field for the onset of saturation
$ E_{F}$ ... Fermi energy
$ {\it E}_\mathrm{g}$ ... Band gap energy
$ E_\mathrm {gate}$ ... Effective field at the gate
$ {\it E}_\mathrm{g,0}$, $ {\it E}_\mathrm{g,300}$ ... Band gap energy at T= 0 K, and at $ {\it T}_\mathrm{L}$= 300 K
$ E_{i}$ ... Threshold energy
$ {\it E}_\mathrm{off}$ ... Energy offset
$ E_{r,0}$ ... Energy loss per scattering at reference temperature
$ E_{0}$ ... Minimum energy
$ E_{T}$ ... Trap energy
$ E_{V}$ ... Valence band energy
$ E_{W}$ ... Workfunction energy difference
$ {\it f}$ ... Frequency
$ {\it f}_\mathrm{c}$ ... Frequency for k = 1
$ {\it f}_\mathrm{max}$ ... Maximum frequency of oscillation
$ F_n$, $ F_p$ ... Driving force for electrons and holes
$ {\it F}_{\mathrm{min}}$ ... Minimum noise figure
$ {\it f}_\mathrm{T}$ ... Current gain cut-off frequency
$ {\it g}_{\mathrm{ds}}$ ... Output conductance
$ {\it g}_{\mathrm{ds,ext}}$ ... Extrinsic output conductance
$ {\mit g}_{\mathrm{m}}$ ... Transconductance
$ {\mit g}_{\mathrm{mi}}$ ... Intrinsic transconductance
$ {\it g}_{\mathrm{m im}}$ ... Transconductance due to impact ionization
$ {\it g}_{\mathrm{m,max}}$ ... Maximum transconductance
$ {\it G}_{\mathrm{\nu}}$ ... Generation rate
$ \gamma$ ... Exponent in mobility models
$ h$ ... Plank constant
$ H$ ... Heat generation
$ {\it I}_{\mathrm{D}}$ ... Drain current
$ {\it I}_{\mathrm{Dmax}}$ ... Maximum drain current
$ {\it I}_{\mathrm{DS}}$ ... Drain source current
$ {\it I}_{\mathrm{G}}$ ... Gate current
$ I_\mathrm {II}$ ... Impact ionization contribution to the gate current
$ I_\mathrm {TFE}$ ... Thermionic field emission contribution to the gate current
$ {\mathbf{J}}_{\mathrm{n}}$, $ {\mathbf{J}}_{\mathrm{p}}$ ... Current densities for electrons and holes
$ {\it k}_{\mathrm{B}}$ ... Boltzmann constant
$ {\it k}$ ... Stability factor
$ \kappa_\nu$ ... Carrier thermal conductivity
$ \lambda_0$ ... Mean free path for the optical phonon
$ \lambda_B$ ... De Broglie wave length
$ {\it l}_{\mathrm{Co}}$ ... Length contact to recess
$ {\it l}_{\mathrm{g}}$ ... Gate length
$ {\it L}_{\mathrm{S}}$ ... Source inductance
$ {\it ME}$ ... Modulation efficiency
$ \mu^L$ ... Mobility corrected by lattice scattering
$ \mu^{LI}$ ... Mobility corrected by lattice and impurity scattering
$ \mu^{LIF}$ ... High field mobility
$ \mu_\nu^{{min}}$ ... Minimum mobility
$ {\it m}_{\mathrm{n}}$ ... Relative mass electron
$ m^*$ ... Effective carrier mass
$ \mu_\nu$ ... Mobility of the carrier $ \nu$
$ m_{0}$ ... Free electron mass
$ {\it m}_{\mathrm{p}}$ ... Relative mass hole
$ {\it MSA}$ ... Measure of sampling adequacy
$ {\it m}_{\mathrm{t}}$ ... Effective tunneling mass
$ {\it N}_{\mathrm{A}}$ ... Acceptor concentration
$ n$ ... Electron concentration
$ {\it n}_{\mathrm{ac}}$ ... Active doping concentration
$ {\mathbf{n}}$ ... Normal vector
$ {\it N}_{\mathrm{C}}$ ... Effective density of states for electrons
$ {\it n}_{\mathrm{c}}$ ... Reference charge
$ {\it N}_{\mathrm{D}}$ ... Donator concentration
$ {\it n}_{\mathrm{i}}$ ... Intrinsic concentration
$ {\it n}_{\mathrm{nom}}$ ... Nominal doping concentration
$ n_0$ ... Equilibrium concentration at contact
$ {\it n}_{\mathrm{sheet}}$ ... Channel sheet charge density
$ {\it N}_{\mathrm{T}}$ ... Trap concentration
$ {\it N}_{\mathrm{V}}$ ... Effective density of states for holes
PAE ... Power Added Efficiency
$ p$ ... Hole concentration
$ p_0$ ... Equilibrium concentration
$ \phi_B$ ... Barrier height
$ \psi_{bi}$ ... Built-in potential
$ {\it P}_{\mathrm{diss}}$ ... Dissipated power
$ {\it P}_{\mathrm{in}}$ ... Input power
$ {\it P}_{\mathrm{out}}$ ... Output power
$ \psi$ ... Electrostatic potential
$ {\it P}_{\mathrm{sat}}$ ... Saturated output power
$ q$ ... Elementary charge
$ R$ ... Net recombination rate
$ R^{Au}$ ... Auger generation/recombination rate
$ {\it R}_{\mathrm{D}}$ ... Drain resistance
$ {\it R}_{\mathrm{ds}}$ ... Drain source resistance
$ {\it R}_{\mathrm{G}}$ ... Gate resistance
$ {\it R}_{\mathrm{gd}}$ ... Gate drain resistance
$ {\it R}_{\mathrm{gs}}$ ... Gate source resistance
$ R^{II}$ ... Impact ionization generation rate
$ {\it R}_{\mathrm{im}}$ ... Impact ionization resistance
$ {\it R}_{\mathrm{L}}$ ... Load resistance
$ {\it R}_{\mathrm{pgs}}$ ... Gate leakage resistance source side
$ {\it R}_{\mathrm{pgd}}$ ... Gate leakage resistance drain side
$ \rho$ ... Mass density
$ \rho_{ij}$ ... Elements of the correlation matrix
$ {\it R}_{\mathrm{S}}$ ... Source resistance
$ R^{\mathrm{SRH}}$ ... Shockley-Read-Hall recombination rate
$ {\it R}_{\mathrm{th}}$ ... Thermal resistance
$ \sigma$ ... Interface charge density
$ \sigma_T$ ... Trap capture cross section
$ S_{ij}$ ... Scattering parameter, i,j=1,2
$ s_{i}$ ... Variance
$ S_{L}$ ... Lattice heat flux density
$ S_n$,$ S_p$ ... Surface recombination velocities
$ \mathbf{S}_n$, $ \mathbf{S}_p$ ... Electron and hole energy flux density
$ S_{V,1/f,lin}$ ... Noise voltage spectrum, linear approximation
$ t$ ... Time
$ {\it\tau}_{\mathrm{CS}}$ ... Delay time current switch
$ {\it T}_\mathrm{C}$  ... Contact temperature
$ \tau_{ext}$ ... Extrinsic delay time
$ {\it\tau}_{\mathrm{i}}$ ... Intrinsic delay time
$ {\it\tau}_{\mathrm{ind}}$ ... Inductive delay time
$ {\it T}_\mathrm{L}$  ... Lattice temperature
$ \tau_n$, $ \tau_p$ ... Recombination lifetimes for electrons and holes
$ {\it T}_\mathrm{n}$ ... Electron temperature
$ {\it T}_\mathrm{\nu}$ ... Carrier temperature
$ {\it T}_\mathrm{p}$ ... Hole temperature
$ {\it\tau}_{\mathrm{port}}$ ... Port extension
$ {\it\tau }$ ... Phase term of the transconductance $ {\mit g}_{\mathrm{m}}$
$ {\it\tau}_{\mathrm{SF}}$ ... Delay time source follower
$ {\it T}_{\mathrm{sub}}$ ... Substrate temperature
$ \tau_t$ ... Time constant trap
$ {\it\tau}_{{w,n}}$ ... Electron energy relaxation time
$ {\it\tau}_{{w,p}}$ ... Hole energy relaxation time
$ u$ ... Carrier energy relative to the threshold energy $ E_i$
$ {\it U}$ ... Unilateral gain
$ {\it V}_{\mathrm{bar}}$ ... Equivalent potential barrier height
$ {\it V}_{\mathrm{D}}$ ... Drain potential
$ V_{dd}$ ... Operating voltage CMOS
$ {\it V}_{\mathrm{DS}}$ ... Drain source voltage
$ {\it v}_{\mathrm{eff}}$ ... Effective carrier velocity
$ {\it v}_{\mathrm{eff,het}}$ ... Effective carrier velocity in the presence of heterointerfaces
$ {\it V}_{\mathrm{G}}$ ... Gate potential
$ {\it V}_{\mathrm{GD}}$ ... Gate drain voltage
$ {\it V}_{\mathrm{GS}}$ ... Gate source voltage
$ {\it v}_{\mathrm{max}}$ ... Maximum carrier velocity
$ v_{n,p}$ ... Recombination velocity for electrons and holes
$ {\it v}_{{sat}}$ ... Saturation velocity
$ {\it V}_{\mathrm{T}}$ ... Threshold voltage
$ {\it W}_{\mathrm{g}}$ ... Gate width
$ {\it x}_{\mathrm{tun}}$ ... Effective tunneling length


next up previous
Next: List of Abbreviations Up: . Previous: Acknowledgments
Quay
2001-12-21