9.3.1 The Inverse Modeling Problem

In this example we will demonstrate how a doping profile of an NMOS transistor can be determined on the basis of I/V-measurements. Transfer curves as well as output characteristics have been measured for devices with gates of $0.18\mu \textrm {m}$, $0.25\mu \textrm {m}$, and $0.5\mu \textrm {m}$ gate length. Each device was measured at 0.V and -1.V bulk bias. This means we have 12 sets of I/V-curves in total.