5.1 Low Field Electron Mobility in Undoped Layers

In undoped layers scattering on ionized impurities and plasmon scattering can be neglected and thus these scattering mechanisms are not included in the scattering operator in this section.
Subsections

5.1.1 Si layers on $\textrm {Si}_{1-y}\textrm {Ge}_{y}$ substrates
- 5.1.1.1 Ge Composition Dependence of Perpendicular and In-plane Components
- 5.1.1.2 Substrate Orientation Dependence
5.1.2 $\textrm {Si}_{1-x}\textrm {Ge}_{x}$ layers on $\textrm {Si}_{1-y}\textrm {Ge}_{y}$ substrates

S. Smirnov:


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