Next: 1. Introduction Up: Dissertation Ivan Starkov Previous: List of Tables
| AC | alternating current |
|---|---|
| AI | acceleration integral |
| BTE | Boltzmann's transport equation |
| BTI | bias temperature instability |
| CMOS | complementary metal-oxide- semiconductor |
| CP | charge pumping |
| DC | direct current |
| DD | drift-diffusion |
| DEMOS | drain extended metal-oxide-semiconductor |
| DF | distribution function |
| DOS | density-of-states |
| HC | hot carrier |
| HCD | hot-carrier degradation |
| HD | hydrodynamic |
| HV | high voltage |
| LDMOS | lateral diffused metal-oxide-semiconductor |
| MC | Monte Carlo |
| MOS | metal-oxide-semiconductor |
| MOSFET | metal-oxide-semiconductor field-effect-transistor |
| MP | multiple particle |
| MR | multiple refresh |
| NBTI | negative bias temperature instability |
| NSC | non-self-consistent |
| SC | self-consistent |
| SHE | spherical harmonics expansion |
| SP | single particle |
| STI | shallow trench isolation |
| STM | scanning tunneling microscope |
| TCAD | technology computer-aided design |
| WCC | worst-case conditions |
| D | Deuterium |
|---|---|
| H | Mobile hydrogen |
| Si-D | Silicon deuterium |
| Si-H | Silicon hydrogen |
| SiO2 | Silicon dioxide |
| SiON | Silicon oxynitride |