- I. Starkov, H. Enichlmair, S. Tyaginov, and T. Grasser:
"Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs";
in Proceedings of the 19th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2012, 6 pages;
Talk at the IPFA, Singapore; 2010-07-02 - 2010-07-06.
- S.E. Tyaginov, I.A. Starkov, O. Triebl, M. Karner, Ch. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, and T. Grasser:
"Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation";
in Proceedings of the 19th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2012, 5 pages;
Poster at the IPFA, Singapore; 2010-07-02 - 2010-07-06.
- I. Starkov, H. Enichlmair, T. Grasser:
"Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET";
in Abstract Booklet of the 17th Workshop on Dielectrics in Microelectronics, 2012, p. 40.
Talk at the WODIM, Dresden, Germany; 2012-06-25 - 2012-06-27.
- I. Starkov, H. Enichlmair, S. Tyaginov, T. Grasser:
"Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress";
in Conference Proceedings of International Reliability Physics Symposium, 2012, 6 pages;
Poster at the IRPS, California, USA; 2012-04-17 - 2012-04-19.
- I. Starkov, A. Starkov, S. Tyaginov, H. Enichlmair, H. Ceric, and T. Grasser:
"An Analytical Model for MOSFET Local Oxide Capacitance";
in Proceedings of the International Semiconductor Device Research Symposium, 2011, 2 pages;
Poster at the ISDRS, Washington DC, USA; 2011-12-07 - 2011-12-09.
- S. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
in Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, 2011, pp. 1525-1529;
Talk at the ESREF, Bordeaux, France; 2011-10-03 - 2011-10-07.
- I. Starkov, S. Tyaginov, H. Enichlmair, J. M. Park, H. Ceric, and T. Grasser:
"Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements";
Solid State Phenomena, vol. 178-179, pp. 267-272, 2011.
- S. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Microelectronics Reliability, vol. 51, pp. 1525-1529, 2011.
- S. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling";
in Proceedings of the 41st European Solid-State Device Research Conference, 2011, pp. 151-154;
Talk at the ESSDERC, Helsinki, Finland; 2011-09-12 - 2011-09-16.
- S. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Modeling";
in Meet. Abstr. - Electrochem. Soc. 2011, 2011, 1 page;
Talk at the ECS Meeting, Montreal, Canada; 2011-05-01 - 2011-05-06.
- I. Starkov, S. Tyaginov, H. Ceric, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET";
in Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics, 2011, pp. 197-200;
Talk at the PRIME, Madonna di Campiglio, Italy; 2011-03-07 - 2011-07-07.
- S. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Models";
in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics, ECS Transactions, 2011, pp. 321-352.
- I.Starkov and H. Ceric:
"Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress";
in Extended Abstracts of 2011 International Conference on Solid State Devices and Materials, 2011, pp. 90-91;
Poster at the SSDM, Nagoya, Japan; 2011-28-10 - 2011-30-10.
- I. Starkov, S. Tyaginov, H. Enichlmair, J. M. Park, H. Ceric, and T. Grasser:
"Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements";
in GADEST 2011: Abstract Booklet, 2011, pp. 105-106;
Talk at the GADEST, Loipersdorf, Austria; 2011-25-09 - 2011-30-09.
- I. Starkov, H. Ceric, S. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs";
in Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices, 2011, 4 pages;
Talk at the SISPAD, Osaka, Japan; 2011-09-08 - 2011-09-10.
- S. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET";
in Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices, 2011, 4 pages;
Talk at the SISPAD, Osaka, Japan; 2011-09-08 - 2011-09-10.
- I. Starkov, S. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J. M. Park, H. Ceric, and T. Grasser:
"Hot-carrier degradation caused interface state profile - Simulation versus experiment";
J. Vac. Sci. Technol. B, vol. 29, pp. 01AB09-1-01AB09-8, 2011.
- S.E. Tyaginov, I.A. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner,
Ch. Kernstock , E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations";
in: Proceedings of the 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2010, pp. 341-345;
Talk at the IPFA, Singapore; 2010-07-05 - 2010-07-09.
- I.A. Starkov, S.E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, Ch. Kernstock,
E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations";
in Proceedings of the 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2010, pp. 139-144;
Poster at the IPFA, Singapore; 2010-07-05 - 2010-07-09.
- I.Starkov, S. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"HC degradation model: interface state profile - simulations vs. experiment";
in Book of Abstracts WoDiM 2010, 2010, p. 128;
Poster at the WoDiM, Bratislava, Slovakia; 2010-06-28 - 2010-06-30.
- S.E. Tyaginov, I.A. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, Ch. Kernstock,
E.Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface states charges as a vital component for HC degradation modeling";
in Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, 2010, pp. 1267-1272;
Talk at the ESREF, Gaeta, Italy; 2010-10-11 - 2010-10-15.
- S.E. Tyaginov, I.A. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park,
H. Enichlmair, M. Karner, Ch. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-Of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Microelectronics Reliability, vol. 50, pp. 1267-1272, 2010.
- I. Starkov, S. Tyaginov, T. Grasser:
"Green's Function Asymptotic in Two-Layered Periodic Medium";
in Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology, 2009, pp. 111 - 112;
Talk at the ISNPT, Minsk; 2009-06-22 - 2009-06-26.
- S. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Microelectronics Reliability, vol. 49, pp. 998 - 1002, 2009.
- S. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
in Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, 2009, pp. 998-1002;
Talk at the ESREF, Bordeaux, France; 2009-10-05 - 2009-10-09.
I. Starkov: Comprehensive Physical Modeling of Hot-Carrier Induced Degradation
