Device optimizations have shown that the drive current of a MOS transistor can be substantially increased for a fixed off-state current if a doping peak is placed asymmetrically inside the channel region close to the source well (PCD--Peaking Channel Doping). To prevent punchthrough the remainder of the bulk region must be either uniformly doped at a certain level or very lightly doped with a highly doped region under the source well. However, these two methods turned out to result in about the same performance gain, therefore the first, simpler method will be used in this section to investigate the performance enhancement of the PCD device.