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Acronyms

ADB Asymmetrically Doped Buried-layer
ASCII American Standard Code for Information Interchange
CMOS Complementary MOS
DIBL Drain-Induced Barrier Lowering
DMOS Double-diffused MOS
DOE Design Of Experiment
FIB Focused Ion Beam
GC Graded Channel
GCMOS Graded Channel MOS
HCE Hot-Carrier Effects
II Impact Ionization
LAC Lateral Asymmetric Channel
LATI Large Angle Tilted Implantation
LDC Laterally Doped Channel
LDD Lightly Doped Drain
MOS Metal Oxide Semiconductor
NMOS N-channel MOS
PCD Peaking Channel Doping
PIF Profile Interchange Format
PMOS P-channel MOS
QFL Quasi-Fermi Level
RCP Retrograde Channel Profile
RSM Response Surface Model
SCE Short-Channel Effect
SIA Semiconductor Industry Association
SIESTA Simulation Environment for Semiconductor Technology Analysis
SOI Semiconductor On Insulator
TCAD Technology Computer Aided Design
ULSI Ultra Large Scale Integration


next up previous contents
Next: List of Figures Up: Michael Stockinger's Dissertation Previous: Contents
Michael Stockinger
2000-01-05