| ADB | Asymmetrically Doped Buried-layer |
|---|---|
| ASCII | American Standard Code for Information Interchange |
| CMOS | Complementary MOS |
| DIBL | Drain-Induced Barrier Lowering |
| DMOS | Double-diffused MOS |
| DOE | Design Of Experiment |
| FIB | Focused Ion Beam |
| GC | Graded Channel |
| GCMOS | Graded Channel MOS |
| HCE | Hot-Carrier Effects |
| II | Impact Ionization |
| LAC | Lateral Asymmetric Channel |
| LATI | Large Angle Tilted Implantation |
| LDC | Laterally Doped Channel |
| LDD | Lightly Doped Drain |
| MOS | Metal Oxide Semiconductor |
| NMOS | N-channel MOS |
| PCD | Peaking Channel Doping |
| PIF | Profile Interchange Format |
| PMOS | P-channel MOS |
| QFL | Quasi-Fermi Level |
| RCP | Retrograde Channel Profile |
| RSM | Response Surface Model |
| SCE | Short-Channel Effect |
| SIA | Semiconductor Industry Association |
| SIESTA | Simulation Environment for Semiconductor Technology Analysis |
| SOI | Semiconductor On Insulator |
| TCAD | Technology Computer Aided Design |
| ULSI | Ultra Large Scale Integration |