| BCD | ... | Bipolar, CMOS, and DMOS |
| BJT | ... | Bipolar junction transistor |
| BTE | ... | Boltzmann transport equation |
| CMOS | ... | Complementary MOS |
| DD | ... | Drift-diffusion |
| DMOS | ... | Double-diffused MOS |
| EPI | ... | Epitaxial (layer) |
| ESD | ... | Electrostatic discharge |
| GTO | ... | Gate turn off |
| HBM | ... | Human body model |
| HCD | ... | Hot-carrier degradation |
| HD | ... | Hydro dynamic |
| IEEE | ... | The Institute of Electrical and Electronics Engineering |
| IGBT | ... | Insulated gate bipolar transistor |
| LDD | ... | Lightly doped drain extension |
| LDMOS | ... | Lateral double-diffused MOSFET |
| MC | ... | Monte Carlo |
| MOS | ... | Metal-oxide-semiconductor, often used as synonym for MOSFET |
| MOSFET | ... | MOS field-effect transistor |
| MP | ... | Multiple-particle (in context of HCD) |
| MTTF | ... | Mean time to failure |
| NBTI | ... | Negative bias temperature instability |
| RESURF | ... | Reduced surface field |
| RF | ... | Radio frequency |
| SOI | ... | Silicon on insulator |
| SILC | ... | Stress-induced leakage current |
| SIMS | ... | Secondary ion mass spectrometry |
| SP | ... | Single-particle (in context of HCD) |
| SRH | ... | Shockley-Read-Hall |
| TCAD | ... | Technology computer-aided design |
| TDDB | ... | Time dependent dielectric breakdown |
| TLP | ... | Transmission line pulse |