| ABMC |
... |
Monte Carlo simulation based on analytical band description |
| nMOS |
... |
n-channel MOS |
| pMOS |
... |
p-channel MOS |
| BTE |
... |
Boltzmann transport equation |
| CESL |
... |
Contact etch stop liner |
| CMOS |
... |
Complementary MOS |
| DSL |
... |
Dual stress liner |
| EPM |
... |
Empirical pseudopotential method |
| FBMC |
... |
Monte Carlo simulation based on full band description |
| FET |
... |
Field-effect transistor |
| HOT |
... |
Hybrid orientation technology |
| ITRS |
... |
International Technology Roadmap for Semiconductors |
| MC |
... |
Monte Carlo |
| MOS |
... |
Metal-oxide-semiconductor |
| MOSFET |
... |
MOS field-effect transistor |
| RTA |
... |
Relaxation-time approximation |
| SEG |
... |
Selective epitaxial growth |
| SGOI |
... |
SiGe on insulator |
| SIA |
... |
Semiconductor Industry Association |
| SMT |
... |
Stress memorization technique |
| SOI |
... |
Silicon on insulator |
| SSGOI |
... |
Strained Si on SiGe on insulator |
| SSDOI |
... |
Strained Si directly on insulator |
| STI |
... |
Shallow trench isolation |
| TCAD |
... |
Technology computer-aided design |
| UTB |
... |
Ultra-thin-body |
| VLSI |
... |
Very large scale integration |
