next up previous contents
Next: Curriculum Vitae Up: Own Publications Previous: Publications in Journals

Publications in Conference Proceedings

C18
W. Wessner, S. Wagner, T. Grasser, and S. Selberherr, ``Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations,'' in Proc. Asia Pacific Microwave Conference (APMC), (New Delhi, India), 2004.
(cd rom).

C17
S. Wagner, T. Grasser, and S. Selberherr, ``Physical Modeling of Semiconductor Devices for Microwave Applications,'' in Proc. Asia Pacific Microwave Conference (APMC), (New Delhi, India), 2004.
(cd rom, invited).

C16
T. Ayalew, S. Wagner, T. Grasser, and S. Selberherr, ``Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates,'' in Proc. 5th European Conference on Silicon Carbide and Related Materials, (Bologna, Italy), pages 76-77, Sept. 2004.

C15
H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, and S. Selberherr, ``The Evolution of the Resistance and Current Density During Electromigration,'' in Proc. Simulation of Semiconductor Processes and Devices, (Munich, Germany), pages 331-334, Sept. 2004.

C14
S. Wagner, T. Grasser, and S. Selberherr, ``Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation,'' in Proc. Simulation of Semiconductor Processes and Devices SISPAD, (Munich, Germany), pages 351-354, Sept. 2004.

C13
S. Wagner, T. Grasser, and S. Selberherr, ``Mixed-Mode Device and Circuit Simulation,'' in Proc. 11th Intl. Conference Mixed Design of Integrated Circuits and Systems, (Szczecin, Poland), pages 36-41, June 2004.
(invited).

C12
S. Wagner, T. Grasser, and S. Selberherr, ``Evaluation of Linear Solver Modules for Semiconductor Device Simulation,'' in Proc. 5th Intl. Conference on Mathematical Problems in Engineering and Aerospace Sciences ICNPAA, (Timisoara, Romania), June 2004.
(in print).

C11
S. Wagner, T. Grasser, and S. Selberherr, ``Benchmarking Linear Solvers with Semiconductor Simulation Examples,'' in Proc. Intl. Conference on Scientific and Engineering Computation IC-SEC, (Singapore), June 2004.
(cd rom).

C10
S. Holzer, A. Sheikoleslami, S. Wagner, C. Heitzinger, T. Grasser, and S. Selberherr, ``Optimization and Inverse Modeling for TCAD Applications,'' in Proc. Symposium on Nano Devices Technology SNDT, (Hsinchu, Taiwan), pages 113-116, May 2004.

C09
S. Wagner, V. Palankovski, R. Quay, T. Grasser, and S. Selberherr, ``Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs,'' in Proc. Intl. Workshop on the Physics of Semiconductor Devices, (Madras, India), pages 836-838, 2003.

C08
S. Wagner, T. Grasser, C. Fischer, and S. Selberherr, ``A Generally Applicable Approach for Advanced Equation Assembling,'' in Proc. International Conference on Software Engineering and Applications SEA, (Marina del Rey, CA), pages 494-499, 2003.

C07
S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, and S. Selberherr, ``Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren,'' in Beiträge zur Informationstagung Mikroelektronik ME 03, (Vienna, Austria), pages 383-388, 2003.

C06
S. Wagner, T. Grasser, C. Fischer, and S. Selberherr, ``Advanced Equation Assembling Techniques for Numerical Simulators,'' in Proc. 15th European Simulation and Modeling Conference ESMC, (Naples, Italy), pages 390-394, 2003.

C05
V. Palankovski, S. Wagner, and S. Selberherr, ``Numerical Analysis of Compound Semiconductor RF Devices,'' in Proc. GaAs IC Symposium, (San Diego, CA), pages 107-110, 2003.
(invited).

C04
S. Wagner, T. Grasser, C. Fischer, and S. Selberherr, ``A Simulator Module for Advanced Equation Assembling,'' in Proc. 15th European Simulation Symposium ESS, (Delft, The Netherlands), pages 55-64, 2003.

C03
S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, and S. Selberherr, ``A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs,'' in Abstracts Intl. SiGe Technology and Device Meeting, (Nagoya, Japan), pages 83-84, 2003.

C02
V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, and S. Selberherr, ``Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation,'' in Proc. International Symposium on Compound Semiconductors, (Lausanne, Switzerland), pages 303-306, 2002.

C01
S. Wagner, V. Palankovski, R. Quay, T. Grasser, and S. Selberherr, ``Small-Signal Analysis and Direct S-Parameter Extraction,'' in Proc. Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications EDMO, (Manchester, UK), pages 50-55, 2002.


next up previous contents
Next: Curriculum Vitae Up: Own Publications Previous: Publications in Journals

S. Wagner: Small-Signal Device and Circuit Simulation