References

Abr88

R. ABRAHAM, J.E. MARSDEN, AND T. RATIU. Mainfolds, Tensor Analysis, and Applications, second edition. Springer-Verlag, New York, 1988.

Add91

G. ADDIEGO, J.L. REYNOLDS, K.L. NG, S.W. KWOK, M.J. TILLMANN, E.W. SCHECKLER, AND A.P. LAI. Sample 1.8A. User's Guide, Electronic Research Laboratory, UC Berkeley, June 1991.

Ant78

D.A. ANTONIADIS, S. HANSEN, AND R.W. DUTTON. SUPREM II - A Program for IC Process Modeling and Simulation. Report 5019-2, Stanford University, 1978.

Ant82

D.A. ANTONIADIS AND I. MOSKOWITZ. Diffusion of Substitutional Impurities in Silicon at Short Oxidation Times: An Insight into Point Defect Kinetics. Journal of Applied Physics, Vol. 53, No. 10, 1982, pp. 6788-6796.

Bac88

B. BACCUS, D. COLLARD, E. DUBOIS, AND D. MOREL. IMPACT4 - A General Two-Dimensional Multilayer Process Simulator. In Proceedings: SISDEP III, 1988, pp. 255-266.

Ban80

R.E. BANK AND D.J. ROSE. Parameter Selection for Newton-Like Methods Applicable to Nonlinear Partial Differential Equations. SIAM Journal on Numerical Analysis, Vol. 17, No. 6, 1980, pp. 806-822.

Ban81

R.E. BANK AND D.J. ROSE. Global Approximate Newton Methods. Numerical Mathematics, Springer-Verlag, Vol. 37, 1981, pp. 279-295.

Bau90

R. BAUER. Numerische Bereichstransformation für die zweidimensionale Prozeß-Simulation. Master's thesis, Technical University Vienna, Austria, 1990. (in german).

Bie80

J.P. BIERSACK AND L.G. HAGGMARK. A Monte Carlo Computer Program for the Transport of Energetic Ions in Amorphous Targets. Nuclear Instruments and Methods, Vol. 174, 1980, pp. 257-269.

Bie81

J.P. BIERSACK. Calculation of Projected Ranges - Analytical Solutions and a Simple General Algorithm. Nuclear Instruments and Methods, Vol. 182/183, 1981, pp. 199-206.

Bie82

J.P. BIERSACK. New Projected Range Algorithm as Derived from Transport Equations. Zeitschrift für Physik A - Atoms and Nuclei, Vol. 305, 1982, pp. 95-101.

Bow92

M.D. BOWYER, D.G. ASHWORTH, AND R. OVEN. Representation of Ion Implantation Projected Range Profiles by Pearson Distribution Curves for Silicon Technology. Solid-State Electronics, Vol. 35, No. 8, 1992, pp. 1151-1166.

Bra82

J.U. BRACKBILL AND J.S. SALTZMAN. Adaptive Zoning for Singular Problems in Two Dimensions. Journal of Computational Physics, Vol. 46, 1982, pp. 342-368.

Bro87

G.B. BRONNER AND J.D. PLUMMER. Gettering of Gold in Silicon: A Tool for Understanding the Properties of Silicon. Applied Physics Letters, Vol. 61, No. 12, 1987, pp. 5286-5288.

Bud88

M. BUDIL, H. PöTZL, G. STINGEDER, M. GRASSERBAUER, AND K. GOSER. A New Model of Anomalous Phosphorus Diffusion in Silicon. In Proceedings: Material Science Forum ICDS-15, 1988, pp. 719-723.

Bur79

A.I. BURISENKO AND I.E. TARAPOV. Vector and Tensor Analysis with Applications. Dover Publications, New York, 1979.

Bür90

J.F. BüRGLER. Discretization and Grid Adaption in Semiconductor Device Simulation. Hartung-Gorre Verlag, Konstanz, 1990.

Cer92

H. CERVA AND G. HOBLER. Comparison of Transmission Electron Microscope Cross Sections with Point-Defect Density Calculations. Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 139, No. 12, 1992, pp. 3631-3638.

Chi83

D. CHIN, S.Y. OH, S.M. HU, R.W. DUTTON, AND J.L. MOLL. Two-Dimensional Oxidation. IEEE Transactions on Electron Devices, Vol. 30, No. 7, 1983, pp. 744-749.

Chi91

G.L. CHIAROTTI, F. BUDA, E. SMARGIASSI, R. CAR, AND M. PARRINELLO. First-Principles Molecular Dynamics Studies of Diffusion Processes in Crystalline Silicon. In Proceedings: 2 International Symposium on Process Physics and Modeling in Semiconductor Technology, 1991, The Electrochemical Society, pp. 175-189.

Chr80

L.A. CHRISTEL, J.F. GIBBONS, AND S. MYLROIE. An Application of the Boltzmann Transport Equation to Ion Range and Damage Distribution in Multilayered Targets. Journal of Applied Physics, Vol. 51, No. 12, 1980, pp. 6176-6182.

Cou83

W.M. COUGHRAN, E. GROSSE, AND D.J. ROSE. CAzM: A Circuit Analyzer with Macromodelling. IEEE Transactions on Electron Devices, Vol. 30, No. 10, 1983, pp. 1207-1213.

Cow90

N.E.B. COWERN, H.F.F. JOS, K.T.F. JANSSEN, AND A.J.H. WACHTERS. Anomalous Transient Tail Diffusion of Boron in Silicon: Kinetic Modeling of Diffusion and Cluster Formation. In Proceedings: Materials Research Society Symposion, 1990, Vol. 163, pp. 605-608.

Cra86

M. CRAMPIN AND F.A.E. PIRANI. Applicable Differential Geometry. Cambridge University Press, New York, 1986.

Cra88

T.L. CRANDLE, W.B. RICHARDSON, AND B.J. MULVANEY. A Kinetic Model for Anomalous Diffusion During Post- Implant Annealing. In Proceedings: International Electron Devices Meeting, 1988, pp. 636-639.

Dea65

B.E. DEAL AND A.S. GROVE. General Relationship for the Thermal Oxidation of Silicon. Journal of Applied Physics, Vol. 36, No. 12, 1965, pp. 3770-3778.

Deu74

P. DEUFLHARD. A Modified Newton Method for the Solution of Ill- Conditioned Systems of Nonlinear Equations with Application to Multiple Shooting. Numerical Mathematics, Springer-Verlag, Vol. 22, 1974, pp. 289-315.

Deu90

P. DEUFLHARD. Global Inexact Newton Methods for Very Large Scale Nonlinear Problems. Preprint SC 90-2, Konrad-Zuse-Zentrum für Informationstechnik, Berlin, February 1990.

Dir86

H.J. DIRSCHMID. Mathematische Grundlagen der Elektrotechnik. Vieweg Verlag, Braunschweig, 1986. (in german).

Dun89

S.T. DUNHAM. Interstitial Kinetics Near Oxidizing Silicon Interfaces. Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 136, No. 1, 1989, pp. 250-254.

Dür89

R. DüRR AND P. PICHLER. A Consistent Pair-Diffusion Based Steady-State Model for Phosphorus Diffusion. In Proceedings: ESSDERC, 1989, Elsevier Science Publishers B.V., pp. 297-301.

Eis87

P.R. EISEMAN AND G. ERLEBACHER. Grid Generation for the Solution of Partial Differential Equations. ICASE Report 87-57, NASA Langley Research Center, Hampton, Virginia, 1987.

Fah90

P. FAHEY AND P. GRIFFIN. Investigation of the Mechanism of Si Self-Interstitial Injection from Nitridation of SiO Films. In Proceedings: Semiconductor Silicon, 1990, pp. 486-495.

Fai73

R.B. FAIR AND G.R. WEBER. Relationship between Resistivity and Total Arsenic Concentration in Heavily Doped n- and p-type Silicon. Journal of Applied Physics, Vol. 44, No. 1, 1973, pp. 273-279.

Fai81

R.B. FAIR. Concentration Profiles of Diffused Dopants in Silicon. In: Impurity Doping Processes in Silicon. North Holland, Amsterdam, 1981, pp. 315-442.

Fai88

R.B. FAIR. Low-Thermal-Budget Process Modeling with the PREDICT Computer Program. IEEE Transactions on Electron Devices, Vol. 35, No. 3, 1988, pp. 285-293.

Fai89

R.B. FAIR. Shallow Junctions - Modeling the Dominance of Point Defect Charge States During Transient Diffusion. In Proceedings: International Electron Devices Meeting, 1989, pp. 691-694.

Fas91

F. FASCHING, C. FISCHER, S. HALAMA, H. PIMINGSTORFER, H. READ, S. SELBERHERR, H. STIPPEL, P. VERHáS, AND K. WIMMER. An Integrated Technology CAD Environment. In Proceedings: VLSI Technology, Systems and Applications Symposium, 1991, pp. 147-151.

Fey63

R.P. FEYNMAN, R.B. LEIGHTON, AND M. SANDS. The Feynman lectures on Physics. Addison-Wesley Publication Company, Englewood Cliffs, 1963.

Fic81

W. FICHTNER AND D.J. ROSE. On the Numerical Solution of Nonlinear PDEs arising from Semiconductor Device Modeling. In Proceedings: Elliptic Problem Solvers, 1981, Academic Press, pp. 277-284.

Fur72

S. FURUKAWA, H. MATSUMURA, AND H. ISHIWARA. Theoretical Considerations on Lateral Spread of Implanted Ions. Japanese Journal of Applied Physics, Vol. 11, No. 2, 1972, pp. 134-142.

Gea71

C.W. GEAR. The Automatic Integration of Ordinary Differential Equations. Communications of the ACM, Vol. 14, No. 3, 1971, pp. 176-179.

Ger89

A. GERODOLLE, C. CORBEX, A. PONCET, T. PEDRON, AND S. MARTIN. TITAN 5, a Two-Dimensional Process and Device Simulator. In Proceedings: Lecture Notes NASECODE VI, 1989, Boole Press, pp. 56-67.

Ghe72

R. GHEZ AND Y.L. VAN DER MEULEN. Kinetics of Thermal Growth of Ultra-Thin Layers of SiO on Silicon. Part II: Theory. Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 119, No. 8, 1972, pp. 1100-1106.

Gib68

J.F. GIBBONS. Ion Implantation in Semiconductors - Part I: Range Distribution Theory and Experiments. Proceedings of the IEEE, Vol. 56, No. 3, 1968, pp. 295-313.

Gib72

J.F. GIBBONS. Ion Implantation in Semiconductors - Part II: Damage Production and Annealing. Proceedings of the IEEE, Vol. 60, No. 9, 1972, pp. 1062-1096.

Gib73

J.F. GIBBONS AND S. MYLROIE. Estimation of Impurity Profiles in Ion-Implanted Amorphous Targets Using Joined Half Gaussian Distributions. Applied Physics Letters, Vol. 22, No. 11, 1973, pp. 568-569.

Gib75

J.F. GIBBONS, W.S. JOHNSON, AND S.W. MYLROIE. Projected Range Statistics, second edition. Dowden, Hutchinson and Ross, Stroudsburg, Pennsylvania, 1975.

Gil86

M.D. GILES. Ion Implantation Calculations in Two Dimensions Using the Boltzmann Transport Equation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 5, No. 4, 1986, pp. 679-684.

Gil88

M.D. GILES. Ion Implantation. In: VLSI Technology, Ed. by S.M. SZE, second edition. McGraw-Hill, 1988, Ch. 8, pp. 327-374.

Gil89

M.D. GILES. Defect-Coupled Diffusion at High Concentrations. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 8, No. 5, 1989, pp. 460-467.

GJ89

S.H. GOODWIN-JOHANSSON, R. SUBRAHMANYAN, C.E. FLOYD, AND H.Z. MASSOUD. Two-Dimensional Impurity Profiling with Emission Computed Tomography Techniques. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 8, No. 4, 1989, pp. 323-335.

Gon92

L. GONG, S. BOGEN, L. FREY, W. JUNG, AND H. RYSSEL. Simulation of High Energy Implantation Profiles in Crystalline Silicon. In Proceedings: ESSDERC, 1992, Elsevier Science Publishers B.V., pp. 495-498.

Gue82

E. GUERRERO, H. PöTZL, R. TIELERT, M. GRASSERBAUER, AND G. STINGEDER. Generalized Model for the Clustering of As Dopants in Si. Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 129, No. 8, 1982, pp. 1826-1831.

Hei90

M. HEINRICH, M. BUDIL, AND H. W. PöTZL. Simulation of Arsenic and Boron Diffusion During Rapid Thermal Annealing in Silicon. In Proceedings: ESSDERC, 1990, Elsevier Science Publishers B.V., pp. 205-208.

Hei91a

M. HEINRICH. Simulation der Diffusion in Silizium. PhD thesis, Technical University Vienna, April 1991. (in german).

Hei91b

G. HEISER. Design an Implementation of a Three-Dimensional, General Purpose Semiconductor Device Simulator. Hartung-Gorre Verlag, Konstanz, 1991.

Hei92

O. HEINREICHSBERGER, S. SELBERHERR, M. STIFTINGER, AND K.P. TRAAR. Fast Iterative Solution of Carrier Continuity Equations for 3D Device Simulations. SIAM Journal on Scientific and Statistical Computing, Vol. 13, No. 1, 1992, pp. 289-306.

Hil88a

A. HILGENSTOCK. A Fast Method for the Elliptic Generation of Three-Dimensional Grids with Full Boundary Control. In Proceedings: Numerical Grid Generation in Computational Fluid Dynamics, 1988, Pineridge Press, pp. 137-146.

Hil88b

S.J. HILLENIUS. VLSI Process Integration. In: VLSI Technology, Ed. by S.M. SZE, second edition. McGraw-Hill, 1988, Ch. 11, pp. 466-515.

Ho83a

C.P. HO AND S.E. HANSEN. SUPREM III - A Program for Integrated Circuit Process Modeling and Simulation. Technical Report SEL 83-001, Integrated Circuits Laboratory, Stanford University, July 1983.

Ho83b

C.P. HO, J.D. PLUMMER, S.E. HANSEN, AND R.W. DUTTON. VLSI Process Modeling - SUPREM III. IEEE Transactions on Electron Devices, Vol. 30, No. 11, 1983, pp. 1438-1453.

Hob87a

G. HOBLER, E. LANGER, AND S. SELBERHERR. Two-Dimensional Modeling of Ion Implantation with Spatial Moments. Solid-State Electronics, Vol. 30, No. 4, 1987, pp. 445-455.

Hob87b

G. HOBLER AND S. SELBERHERR. Verification of Ion Implantation Models by Monte Carlo Simulations. In Proceedings: ESSDERC, 1987, Elsevier Science Publishers B.V., pp. 445-448.

Hob88a

G. HOBLER. Simulation der Ionenimplantation in ein-, zwei- und dreidimensionalen Strukturen. PhD thesis, Technical University Vienna, Austria, November 1988. (in german).

Hob88b

G. HOBLER AND S. SELBERHERR. Two-Dimensional Modeling of Ion Implantation Induced Point Defects. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 7, No. 2, 1988, pp. 174-180.

Hob89

G. HOBLER AND S. SELBERHERR. Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 8, No. 5, 1989, pp. 450-459.

Hob91

G. HOBLER AND H. PöTZL. Simulation of Two-dimensional Implantation Profiles with a Large Concentration Range in Crystall Silicon Using an Advanced Monte Carlo Method. In Proceedings: International Electron Devices Meeting, 1991, pp. 693-696.

Hof75a

W.K. HOFKER. Concentration Profiles of Boron Implanted in Amorphous and Polycrystalline Silicon. Philips Research Report, Vol. Suppl. 8, 1975, pp. 41-57.

Hof75b

W.K. HOFKER. Determination of Moments of Experimental Range Distributions of Boron Implanted in Silicon. Radiation Effects, Vol. 25, 1975, pp. 205-206.

Hof75c

W.K. HOFKER, D.P. OOSTHOEK, N.J. KOEMAN, AND H.A.M. DE GREFTE. Concentration Profiles of Boron Implantations in Amorphous and Polycrystalline Silicon. Radiation Effects, Vol. 24, 1975, pp. 223-231.

Hor88

T. HORI AND K. KURIMOTO. A New p-Channel MOSFET with Large-Tilt-Angle Implanted Punchthrough Stopper (LATIPS). IEEE Electron Device Letters, Vol. 9, No. 12, 1988, pp. 641-643.

Hu68

S.M. HU AND S. SCHMIDT. Interactions in Sequential Diffusion Processes in Semiconductors. Journal of Applied Physics, Vol. 39, No. 9, 1968, pp. 4272-4283.

Hu72

S.M. HU. Diffusion of Heavily Doped Semiconductors: Local Charge Neutrality and One-Band Approximations. Journal of Applied Physics, Vol. 43, No. 4, 1972, pp. 2015-2018.

Hu73

S.M. HU. Diffusion in Silicon and Germanium. In: Atomic Diffusion in Semiconductors, Ed. by D. SHAW. Plenum Press, London, New York, 1973, pp. 217-350.

Hu74

S.M. HU. Formation of Stacking Faults and Enhanced Diffusion in the Oxidation of Silicon. Journal of Applied Physics, Vol. 45, No. 4, 1974, pp. 1567-1573.

Hu83

S.M. HU. Kinetics of Interstitial Supersaturation During Oxidation of Silicon. Applied Physics Letters, Vol. 43, No. 5, 1983, pp. 449-451.

Hu84

S.M. HU. Thermal Oxidation of Silicon: Chemisorption and Linear Rate Constant. Journal of Applied Physics, Vol. 55, No. 11, 1984, pp. 4095-4105.

Hu85

S.M. HU. Kinetics of Interstitial Supersaturation and Enhanced Diffusion in Short-Time/Low Temperature Oxidation of Silicon. Journal of Applied Physics, Vol. 57, No. 10, 1985, pp. 4527-4532.

Hu92a

S.M. HU. Nonequilibrium Point Defects and Diffusion in Silicon. In Proceedings: NASECODE VIII, 1992, Boole Press, pp. 9-11.

Hu92b

S.M. HU. Vacancies and Self-Interstitials in Silicon: Generation and Interaction in Diffusion. Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 139, No. 7, 1992, pp. 2066-2075.

Hün90

R. HüNLICH, U. KRAUSE, R. MODEL, A. POMP, H. STEPHAN, N. STRECKER, AND S. UNGER. Der 2D-Technologiesimulator DIOS. In Proceedings: 6. Symposium Physikalische Grundlagen zu Bauelementtechnologien und Mikroelektronik, 1990, pp. 1-14.

Ire78

E.A. IRENE. Silicon Oxidation Studies: Some Aspects of the Initial Oxidation Regime. Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 125, No. 10, 1978, pp. 1708-1714.

Ish75

H. ISHIWARA, S. FURUKAWA, J. YAMADA, AND M. KAWAMURA. In Proceedings: Fourth International Conference on Ion Implantation, 1975, Plenum Press, p. 423.

Jah81

F. JAHNEL, H. RYSSEL, G. PRINKE, K. HOFFMANN, K. MüLLER, J.P. BIERSACK, AND R. HENKELMANN. Description of Arsenic and Boron Profiles Implanted in , and Using Pearson Distributions with Four Moments. Nuclear Instruments and Methods, Vol. 182/183, 1981, pp. 223-229.

Joh70

N.L. JOHNSON AND S. KOTZ. Continuous Univariate Distributions - 1. Houghton Mifflin Company, Boston, 1970.

Jon88

S.K. JONES AND C. HILL. Modelling Dopant Diffusion in Polysilicon. In Proceedings: SISDEP III, 1988, pp. 441-449.

Jon91

S.K. JONES AND A. GERODOLLE. 2D Process Simulation of Dopant Diffusion in Polysilicon. COMPEL, Vol. 10, No. 4, 1991, pp. 401-410.

Kao88

D.B. KAO, J.P. MCVITTE, W.D. NIX, AND K.S. SARASWAT. Two-Dimensional Thermal Oxidation of Silicon-II. Modeling Stress Effects in Wet Oxides. IEEE Transactions on Electron Devices, Vol. 35, No. 1, 1988, pp. 25-37.

Kim89

Y. KIM, H.Z. MASSOUD, AND R.B. FAIR. The Effect of Ion-Implantation Damage on Dopant Diffusion in Silicon During Shallow-Junction Formation. Journal on Electronic Materials, Vol. 18, No. 2, 1989, pp. 143-150.

Kin55

G.H. KINCHIN AND R.S. PEASE. The Displacement of Atoms in Solids by Radiation. Reports on Progress in Physics, Vol. 18, No. 1, 1955, pp. 1-51.

Kle92

K.M. KLEIN, C. PARK, AND A.F. TASCH. Monte Carlo Simulation of Boron Implantation into Single- Crystal Silicon. IEEE Transactions on Electron Devices, Vol. 39, No. 7, 1992, pp. 1614-1621.

Kre87

J.P. KRESKOVSKY. A Hybrid Central Difference Scheme for Solid-State Device Simulation. IEEE Transactions on Electron Devices, Vol. 34, No. 5, 1987, pp. 1128-1133.

Lau90

F. LAU. Modeling of Polysilicon Diffusion Sources. In Proceedings: International Electron Devices Meeting, 1990, pp. 737-740.

Law88

M.E. LAW AND R.W. DUTTON. Verification of Analytic Point Defect Models Using SUPREM IV. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 7, No. 2, 1988, pp. 181-190.

Lev90

R.F. LEVER, P.A. RONSHELM, AND W.A. RAUSCH. Oxidation Enhanced Diffusion of Boron in Silicon at Low Temperatures. In Proceedings: 177 Meeting Electrochemical Society, 1990, p. 375.

Lin63

J. LINDHARD, M. SCHARFF, AND H.E. SCHIøTT. Range Concepts and Heavy Ion Ranges. Matematisk-fysiske Meddelelser Det Kongelige Danske Videnskabernes Selskab, Vol. 33, No. 14, 1963, pp. 1-42.

Lin79

A.M. LIN, R.W. DUTTON, AND D.A. ANTONIADIS. The Lateral Effect of Oxidation on Boron Diffusion in <100> Silicon. Applied Physics Letters, Vol. 35, No. 10, 1979, pp. 799-801.

Liu92

T.M. LIU, G.M. CHIN, M.D. MORRIS, D.Y JEON, V. D. ARCHER, H.H. KIM, M. CERULLO, K.F. LEE, J. M. SUNG, K. LAU, T.-Y. CHIU, A.M. VOSCHENKOV, AND R.G. SWARTZ. An Ultra High Speed ECL-Bipolar CMOS Technology with Silicon Fillet Self-alligned Contacts. In Proceedings: Symposion on VLSI Technology Digest of Technical Papers, 1992, IEEE Electron Devices Society, Japan Society of Applied Physics, pp. 30-31.

Lor85

J. LORENZ, J. PELKA, H. RYSSEL, A. SACHS, A. SEIDL, AND M. SVOBODA. COMPOSITE - A Complete Modeling Program of Silicon Technology. IEEE Transactions on Electron Devices, Vol. 32, No. 10, 1985, pp. 1977-1986.

Lor89

J. LORENZ, W. KRüGER, AND A. BARTHEL. Simulation of the Lateral Spread of Implanted Ions: Theory. In Proceedings: NASECODE VI, 1989, Boole Press, pp. 513-520.

Mae89

K. MAEX AND L. VAN DEN HOVE. The Effect of Silicides on the Induction and Removal of Defects in Silicon. Materials Science and Engineering, Vol. B 4, 1989, pp. 321-329.

Mal83

C.D. MALDONADO, F.Z. CUSTODE, S.A. LOUIE, AND R. PANCHOLY. Two-Dimensional Simulation of a 2-m CMOS Process Using ROMANS II. IEEE Transactions on Electron Devices, Vol. 30, No. 11, 1983, pp. 1462-1469.

Mar82

P.A. MARKOWICH. A Theory for the Approximation of Solutions of Boundary Value Problems on Infinite Intervals. SIAM Journal on Mathematical Analysis, Vol. 13, No. 3, 1982, pp. 484-513.

Mar83

P.A. MARKOWICH. Analysis of Boundary Value Problems on Infinite Intervals. SIAM Journal on Mathematical Analysis, Vol. 14, No. 1, 1983, pp. 11-37.

Maz84

A.M. MAZZONE AND G. ROCCA. Three-Dimensional Monte Carlo Simulations - Part 1: Implanted Profiles for Dopants in Submicron Devices. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 3, No. 1, 1984, pp. 64-71.

Maz92

C. MAZURé, R. SUBRAHMANYAN, C. GUNDERSON, AND M.ORLOWSKI. Design Consideration for Sub- Buried Channel P-MOSFET Devices. In Proceedings: Symposion on VLSI Technology Digest of Technical Papers, 1992, IEEE Electron Devices Society, Japan Society of Applied Physics, pp. 92-93.

Mic87

A.E. MICHEL, W. RAUSCH, P.A. RONSHEIM, AND R.H. KASTL. Rapid Annealing and the Anomalous Diffusion of Ion Implanted Boron into Silicon. Applied Physics Letters, Vol. 50, No. 7, 1987, pp. 416-418.

Mic89

A.E. MICHEL. Anomalous Transient Diffusion of Ion Implanted Dopants: A Phenomenological Model. Nuclear Instruments and Methods, Vol. B37/38, 1989, pp. 379-383.

Mij91

S. MIJALKOVIC, D. PANTIC, Z. PRIJIC, S. MITROVIC, AND N. STOJADINOVIC. MUSIC - A Multigrid Simulator for IC Fabrication Processes. In Proceedings: NASECODE VII, 1991, Boole Press, pp. 111-113.

Mit80

A.R. MITCHELL AND D.F. GRIFFITHS. The Finite Difference Method in Partial Differential Equations. John Wiley and Sons Ltd., Chichester - New York - Brisbane - Toronto, 1980.

Miz82

S. MIZUO AND H. HIGUCHI. Effect of Back-Side Oxidation on B and P Diffusion in Si Directly Masked with Films. Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 129, No. 10, 1982, pp. 2292-2295.

Moc83

M.S. MOCK. Analysis of Mathematical Models of Semiconductor Devices. Boole Press, 1983.

Mor54

F.J. MORIN AND J.P. MAITA. Electrical Properties of Silicon Containing Arsenic and Boron. Physical Review, Vol. 96, No. 1, 1954, p. 28.

Mor86

F.F. MOREHEAD AND R.F. LEVER. Enhanced Tail Diffusion of Phosphorus and Boron in Silicon. Applied Physics Letters, Vol. 48, No. 2, 1986, pp. 151-153.

Mor89

F.F. MOREHEAD AND R.F. LEVER. The Steady-State Model for Coupled Defect-Impurity Diffusion in Silicon. Journal of Applied Physics, Vol. 66, No. 11, 1989, pp. 5349-5352.

Mul87

B.J. MULVANEY AND W.B. RICHARDSON. Model for Defect-Impurity Pair Diffusion in Silicon. Applied Physics Letters, Vol. 51, No. 18, 1987, pp. 1439-1441.

Mul89

B.J. MULVANEY, W.B. RICHARDSON, AND T.L. CRANDLE. PEPPER - A Process Simulator for VLSI. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 8, No. 4, 1989, pp. 336-349.

Mul91

B.J. MULVANEY AND W.B. RICHARDSON. Physical Models for Impurity Diffusion in Silicon. In Proceedings: NASECODE VII, 1991, Boole Press, pp. 15-17.

Mur82

W.D. MURPHY, W.F. HALL, C.D. MALDONADO, AND S.A. LOUIE. MEMBRE: An Efficient Two-Dimensional Process Code for VLSI. COMPEL, Vol. 1, No. 4, 1982, pp. 219-239.

Nam75

Ed. by S. NAMBA. Fourth International Conference on Ion Implantation, 1975, Plenum Press.

Nic89

C.S. NICHOLS, C.G. VAN DE WALLE, AND S.T. PANTELIDES. Mechanisms of Dopant Impurity Diffusion in Silicon. Physical Review B, Vol. 40, No. 8, 1989, p. 5484.

Nis89

K. NISHI, K. SAKAMOTO, S. KURODA, J. UEDA, T. MIYOSHI, AND S. USHIO. A General-Purpose Two-Dimensional Process Simulator - OPUS - for Arbitrary Structures. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 8, No. 1, 1989, pp. 23-33.

Oda88

S. ODANAKA, H. UMIMOTO, M. WAKABAYASHI, AND H. ESAKI. SMART-P: Rigorous Three-Dimensional Process Simulator on a Supercomputer. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 7, No. 6, 1988, pp. 675-683.

Ohg87

M. OHGO, Y. TAKANO, A. MONIWA, SH. YAMAMOTO, Y. SAKAI, H. MASUDA, AND H. SUNAMI. A Two-Dimensional Integrated Process Simulator: SPIRIT-I. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 6, No. 3, 1987, pp. 439-445.

Orl90

M. ORLOWSKI. Impurity and Point Defect Redistribution in the Presence of Crystal Defects. In Proceedings: International Electron Devices Meeting, 1990, pp. 729-732.

Orl91a

M. ORLOWSKI. Challenges for Process Modelling and Simulation in the 90s - an Industrial Perspective. In Proceedings: SISDEP IV, 1991, Hartung-Gorre Verlag, pp. 3-22.

Orl91b

M. ORLOWSKI, R. SUBRAHMANYAN, AND K. WIMMER. A Knock-in Implantation Method for Ultra Shallow Junctions. Patent Disclosure, Engineering logsheet No. 1158226-1158228, Motorola Inc., Austin, Texas, August 1991.

Orl92

M. ORLOWSKI, H.-H. TSENG, R. HANCE, AND P.J. TOBIN. Fractal Network Diffusion of Fluorine and Boron in Polysilicon Gates. In Proceedings: NUPAD IV, 1992, pp. 35-40.

Ort70

J.M. ORTEGA AND W.C. RHEINHOLD. Iterative Solution of Nonlinear Equations in Several Variables. Academic Press, San Diego, 1970.

Ouw89

G.J.L. OUWERLING. Non-Destructive Measurement of 2D Doping Profiles by Inverse Modeling. In Proceedings: NASECODE VI, 1989, Boole Press, pp. 534-539.

Ozo90

S. OZONO, H. UDA, AND N. OWADA. Redistribution of Heavily Doped Arsenic in Poly-Si Film on Single Silicon Substrate During its Solid Phase Epitaxial Growth. In Proceedings: Semiconductor Silicon, 1990, pp. 515-522.

Paf90

M. PAFFRATH AND K. STEGER. Numerical Solution of Diffusion Equations in Time-Variant Domains. In Proceedings: NUPAD III, 1990, pp. 11-12.

Pan89

D. PANTIC, S. MIJALKOVIC, AND N. STOJADINOVIC. A New Multi-layer Ion Implantation Model for Process Simulation. Microelectronics Journal, Vol. 20, No. 6, 1989, pp. 5-10.

Par90

C. PARK, K.M. KLEIN, AND A.F. TASCH. Efficient Modeling Parameter Extraction for Dual Pearson Approach to Simulation of Implanted Impurity Profiles in Silicon. Solid-State Electronics, Vol. 33, No. 6, 1990, pp. 645-650.

Pen83

B. R. PENUMALLI. A Comprehensive Two-Dimensional VLSI Process Simulation Program, BICEPS. IEEE Transactions on Electron Devices, Vol. 30, No. 9, 1983, pp. 986-992.

Pen90

J.P. PENG, D. CHIDAMBARRAO, AND G.R. SRINIVASAN. Viscoelastic Modeling of Thermal Oxidation of Silicon. In Proceedings: 177 Meeting Electrochemical Society, 1990, pp. 425-426.

Pfi90

J.R. PFIESTER, L.C. PARRILLO, AND F.K. BAKER. A Physical Model for Boron Penetration Through Thin Gate Oxides from p Polysilicon Gate. IEEE Electron Device Letters, Vol. 11, No. 6, 1990, pp. 247-249.

Pic85a

P. PICHLER, W. JüNGLING, S. SELBERHERR, E. GUERRERO, AND H. PöTZL. Simulation of Critical IC-Fabrication Steps. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 4, 1985, pp. 384-397.

Pic85b

P.J. PICHLER. Numerische Simulation kritischer Prozeßschritte in der Halbleitertechnik. PhD thesis, Technical University Vienna, Austria, September 1985. (in german).

Pic90

P. PICHLER AND R. DüRR. ICECREM 4.2 - Simulation Program for Processing Steps in Semiconductor Production. User's Guide, Fraunhofer Arbeitsgruppe für Integrierte Schaltungen, July 1990.

Pic91

P. PICHLER. Private Communication, July 1991.

Poo87

E.L. POOLE AND J.M. ORTEGA. Multicolor ICCG Methods for Vector Computers. SIAM Journal on Numerical Analysis, Vol. 24, No. 6, 1987, pp. 1394-1418.

Pre85

F.P. PREPARATA AND M.I. SHAMOS. Computational Geometry. Springer-Verlag, New York, 1985.

Raf91

C.S. RAFFERTY. Simulation of Stress-Dependent Oxidation. In Proceedings: 2 International Symposium on Process Physics and Modeling in Semiconductor Technology, 1991, The Electrochemical Society, pp. 756-771.

Rob63

M.T. ROBINSON AND O.S. OEN. Computer Studies of the Slowing Down of Energetic Atoms in Crystals. Physical Review, Vol. 132, No. 6, 1963, pp. 2385-2398.

Rob74

M.T. ROBINSON AND I.M. TORRENS. Computer Simulation of Atomic-Displacement Cascades in Solids in the Binary-Collision Approximation. Physical Review B, Vol. 9, No. 12, 1974, pp. 5008-5024.

Ros91

J.E. ROSE, A.B. COWEN, D. MATHIOT, AND S. KENKEL. Model Development in PREDICT2. In Proceedings: NASECODE VII, 1991, Boole Press, pp. 20-24.

Run77

H. RUNGE. Distribution of Implanted Ions under Arbitrarily Shaped Mask Edges. Physica Status Solidi A, Vol. 39, 1977, pp. 595-599.

Rys81

H. RYSSEL, G. PRINKE, K. HABERGER, K. HOFFMANN, K. MüLLER, AND R. HENKELMANN. Range Parameters of Boron Implanted into Silicon. Applied Physics A, Vol. 24, 1981, pp. 39-43.

Rys83a

H. RYSSEL. Implantation and Diffusion Models for Process Simulation. In Proceedings: VLSI Process and Device Modeling, 1983, Katholieke Universiteit Leuven, pp. 1-41.

Rys83b

H. RYSSEL AND K. HOFFMANN. Ion Implantation. In: Process and Device Simulation for MOS-VLSI Circuits. Martinus Nijhoff Publishers, 1983, pp. 125-179.

Rys86a

H. RYSSEL AND J.P. BIERSACK. Ion Implantation Models for Process Simulation. In: Process and Device Modeling, Ed. by W. ENGL. Elsevier Science Publishers B.V., North-Holland, 1986, pp. 31-69.

Rys86b

H. RYSSEL AND I. RUGE. Ion-Implantation. Wiley, 1986.

Rys87

H. RYSSEL, W. KRüGER, AND J. LORENZ. Comparison of Monte Carlo Simulations and Analytical Models for the Calculation of Implantation Profiles in Multilayer Targets. Nuclear Instruments and Methods, Vol. B19/20, 1987, pp. 40-44.

Sal83

K.A. SALSBURG AND H.H. HANSEN. FEDSS - Finite-Element Diffusion-Simulation System. IEEE Transactions on Electron Devices, Vol. 30, No. 9, 1983, pp. 1004-1011.

Sch69

D.L. SCHARFETTER AND H.K. GUMMEL. Large-Signal Analysis of a Silicon Read Diode Oscillator. IEEE Transactions on Electron Devices, Vol. 16, No. 1, 1969, pp. 64-77.

Sch85

S.A. SCHAFER AND S.A. LYON. New Model of the Rapid Initial Oxidation of Silicon. Applied Physics Letters, Vol. 47, No. 2, 1985, pp. 154-156.

Sch91

C. SCHIEBL. PROMIS - The New Ion-Implantation Capability. CEC-Vienna Report 3/91, Digital Equipment Corporation, Campusbased Engineering Center Vienna, Vienna, Austria, July 1991.

Sei83

A. SEIDL. Mathematical Implementation of Segregation Model for Two-dimensional Process Simulation. IEEE Transactions on Electron Devices, Vol. 30, No. 7, 1983, pp. 722-723.

Sel81

S. SELBERHERR AND E. GUERRERO. Simple and Accurate Representation of Implantation Parameters by Low Order Polynomials. Solid-State Electronics, Vol. 24, No. 6, 1981, pp. 591-593.

Sel84

S. SELBERHERR. Analysis and Simulation of Semiconductor Devices. Springer-Verlag, Wien - New York, 1984.

Sel90

S. SELBERHERR, W. HäNSCH, M. SEAVEY, AND J. SLOTBOOM. The Evolution of the MINIMOS Mobility Model. Solid-State Electronics, Vol. 33, No. 11, 1990, pp. 1425-1436.

Sho54

W. SHOCKLEY. Forming Semiconductor Devices by Ionic Bombardment. US Patent 2787564, Bell Laboratories, 1954.

Shr80

R. SHRIVASTAVA AND A.H. MARSHAK. Charge Neutrality and the Internal Electric Field Produced by Impurity Diffusion. Solid-State Electronics, Vol. 23, No. 1, 1980, pp. 73-74.

Sig69

P. SIGMUND. On the Number of Atoms Displaced by Implanted Ions or Energetic Recoil Atoms. Applied Physics Letters, Vol. 14, No. 3, 1969, pp. 114-117.

Sim82

J.G. SIMMONDS. A Brief on Tensor Analysis. Springer-Verlag, New York, 1982.

Smi82

G.E. SMITH AND A.J. STECKL. RECIPE - A Two-Dimensional VLSI Process Modeling Program. IEEE Transactions on Electron Devices, Vol. 29, No. 2, 1982, pp. 216-221.

SN85

M. SIMARD-NORMADIN AND C. SLABY. Empirical Modeling of Low Energy Implants in Silicon. Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 132, No. 9, 1985, pp. 2218-2223.

Sol90

S. SOLMI, E. LANDI, AND F. BARUFFALDI. High-Concentration Boron Diffusion in Silicon: Simulation of the Precipitation Phenomena. Journal of Applied Physics, Vol. 68, No. 7, 1990, pp. 3250-3258.

Sol92

H.R. SOLEIMANI. Modelling of High-Dose Ion Implantation-Induced Dopant Transient Diffusion, and Dopant Transient Activation in Silicon (Boron and Arsenic Diffusion). Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 139, No. 11, 1992, pp. 3275-3284.

Son89

T. SONAR. Grid Generation Using Elliptic Partial Differential Equations. Technical Report FB 89/15, Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt, Braunschweig, March 1989.

Sto83

J. STOER. Einführung in die numerische Mathematik I, third edition. Springer-Verlag, Berlin, 1983.

Sub90

R. SUBRAHMANYAN, H.Z. MASSOUD, AND R. B. FAIR. Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon. Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 137, No. 5, 1990, pp. 1573-1578.

Sub91

R. SUBRAHMANYAN, M. ORLOWSKI, AND K. WIMMER. Differential Knock-in Implantation Method for Ultra Shallow n-p-n Junctions and Band Gap Engineering. Patent Disclosure, Engineering logsheet No. 1158233-1158235, Motorola Inc., Austin, Texas, August 1991.

Sub92

R. SUBRAHMANYAN. Measurement of Two-dimensional Doping Profiles. In Proceedings: ESSDERC, 1992, Elsevier Science Publishers B.V., pp. 585-592.

Tak83

T. TAKEDA AND A. YOSHII. A Two-Dimensional Boltzmann Transport Equation Approach to Ion Implantation in Silicon. IEEE Electron Device Letters, Vol. 4, No. 12, 1983, pp. 430-432.

Tak89

M. TAKAI, M. IZUMI, T. YAMAMOTO, S. NAMBA, AND T. MINAMISONO. Rapid Thermal Annealing of Arsenic-Implanted Poly-Si Layers on Insulator. Nuclear Instruments and Methods, Vol. B39, 1989, pp. 352-356.

Tan85

T.Y. TAN AND U. GöSELE. Point-defects, Diffusion-Processes, and Swirl Defect Formation in Silicon. Applied Physics A, Vol. 37, No. 1, 1985, pp. 1-17.

Tas89

A.F. TASCH, H. SHIN, C. PARK, J. ALVIS, AND S. NOVAK. An Improved Approach to Accurately Model Shallow and Implants in Silicon. Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 136, No. 3, 1989, pp. 810-814.

Tho85

J.F. THOMPSON, Z.U.A WARSI, AND C.W. MASTIN. Numerical Grid Generation. North-Holland, 1985.

Tsa80

M.Y. TSAI, F.F. MOREHEAD, J.E.E. BAGLIN, AND A.E. MICHEL. Shallow Junctions by High-Dose As Implants in Si: Experiments and Modeling. Journal of Applied Physics, Vol. 51, No. 6, 1980, pp. 3230-3235.

Umi89

H. UMIMOTO, S. ODANAKA, I. NAKAO, AND H. ESAKI. Numerical Modeling of Nonplanar Oxidation with Stress Effects. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 8, No. 6, 1989, pp. 599-607.

Vem81

V. VEMURI AND W.J. KARPLUS. Digital Computer Treatment of Partial Differential Equations. Prentice-Hall Inc., Englewood Cliffs, New Jersey, 1981.

vS89

E. VAN SCHIE AND J. MIDDELHOEK. Two Methods to Improve the Performance of Monte Carlo Simulations of Ion Implantation in Amorphous Targets. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 8, No. 2, 1989, pp. 108-113.

Wie89

R.J. WIERZBICKI, J. LORENZ, AND A. BARTHEL. Simulation of Ion Implantation into Multilayer Structures. In Proceedings: ESSDERC, 1989, Elsevier Science Publishers B.V., pp. 193-197.

Wil80

R.G. WILSON. The Pearson IV Distribution and its Application to Ion Implanted Depth Profiles. Radiation Effects, Vol. 46, 1980, pp. 141-148.

Wim90

K. WIMMER, R. BAUER, AND S. SELBERHERR. Body-Fitting Coordinate Generation for Two-Dimensional Process-Simulation. In Proceedings: AMSE Signals and Systems, 1990, Vol. 8, AMSE Press, Tassin, France, pp. 86-96.

Wim91a

K. WIMMER. Knock-in Ion Implantation - A Monte Carlo Study. Technical Report, APRDL/TSG Motorola Inc., Austin, Texas, August 1991.

Wim91b

K. WIMMER, R. BAUER, S. HALAMA, G. HOBLER, AND S. SELBERHERR. Transformation Methods for Nonplanar Process Simulation. In Proceedings: SISDEP IV, 1991, Hartung-Gorre Verlag, pp. 251-256.

Win86

K.B. WINTERBON. Calculating Moments of Range Distributions. Nuclear Instruments and Methods, Vol. B16, 1986, pp. 301-309.

Wol89

D.R. WOLTERS AND A.T.A. ZEGERS-VANDUYNHOVEN. Kinetics of Dry Oxidation of Silicon. Applied Surface Science, Vol. 39, No. 1, 1989, pp. 81-88.

Zie85

J.F. ZIEGLER, J.P. BIERSACK, AND U. LITTMARK. The Stopping and Range of Ions in Solids. Pergamon Press, 1985.