Symbol | Unit | Description |

V | threshold voltage | |

effective mobility | ||

m | displacement vector | |

1 | displacement tensor | |

1 | strain tensor | |

1 | displacement tensor component | |

1 | strain tensor component | |

Nm | stress vector | |

Nm | stress tensor | |

Nm | elastic stiffness tensor | |

Nm | elastic compilance tensor | |

kg | longitudinal electron mass | |

kg | transversal electron mass | |

Hamiltonian | ||

eV | strain dependent Hamiltonian | |

eV | deformation potential for strain components | |

eV | energy | |

eV | energy shifts of the conduction band edge for valeys | |

along and direction | ||

eV | dilatation deformation potential for a valley of type | |

eV | uniaxial deformation potential for a valley of type | |

eV | shear strain deformation potential | |

m | space vector for dimensions | |

m | wave function in the eigenstate and dimensions | |

eV | eigenenergy of the eigenstate | |

m | wave vector for dimensions | |

Bloch function for dimensions | ||

m | ||

kg | effective mass tensor | |

kg | longitudinal effective mass | |

kg | transversal effective mass | |

concentration of molecule/atom | ||

molar conductivity of an electrolyte in infinite dilution | ||

effective conductivity of an electrolyte | ||

molar conductivities for positive and negative ions | ||

1 | valences for positive and negative ions | |

ionic mobility for positive and negative ions | ||

Kohlrausch coefficient | ||

V | overpotential (applied potential minus built in potential) | |

V | externally aplied potential | |

V | electrochemical potential for material X | |

V | chemical potential for material X | |

V | inner potential of matrial X | |

V | reference electrode potential | |

V | electron affinity X | |

V | flatband voltage | |

V | potential | |

1 | relative permittivity of the solute | |

bulk concentration | ||

charge density of the electrolytic double layer | ||

reaction equilibrium constant for positive charging | ||

reaction equilibrium constant for negative charging | ||

surface charge density | ||

total binding site density | ||

charge density of the semiconductor | ||

valency of the corresponding ion | ||

bulk concentration for the ion with valency | ||

V | chemical potential | |

space charge density | ||

sheet charge density | ||

Debye length | ||

ionic strength | ||

scaled potential | ||

electric field | ||

scaled energy | ||

electron mobility | ||

hole mobility |

T. Windbacher: Engineering Gate Stacks for Field-Effect Transistors