Publications Tesfaye Ayalew
17 records
| 7. | T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 295 - 298 doi:10.1007/978-3-7091-0624-2_69. BibTeX |
| 6. | T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93. BibTeX |
| 5. | T. Ayalew, S. Kim, T. Grasser, S. Selberherr: "SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode""; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 476 - 477. BibTeX |
| 4. | T. Ayalew, S. Wagner, T. Grasser, S. Selberherr: "Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 76 - 77. BibTeX |
| 3. | S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr: "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 492 - 493. BibTeX |
| 2. | T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr: "Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 581 - 584. BibTeX |
| 1. | T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr: "Modeling and Simulation of SiC MOSFETs"; Talk: International Conference on Applied Modelling and Simulation, Marbella; 2003-09-03 - 2003-09-05; in "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9, 552 - 556. BibTeX |
| 2. | T. Ayalew, A. Gehring, T. Grasser, S. Selberherr: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 2004-10-04 - 2004-10-08; . BibTeX |
| 1. | T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2003-10-07 - 2003-10-10; . BibTeX |
| 1. | T. Ayalew: "SiC Semiconductor Devices Technology, Modeling and Simulation"; Reviewer: S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 2004, oral examination: 2004-02-26 doi:10.34726/hss.2004.04281063. BibTeX |
| 1. | T. Ayalew: "Design and Evaluation of Variable Gain Cross-Coupled Controller for Biaxial Positioning System"; Supervisor: A. Weinmann, W. Prechelmacher; E360, 2000, . BibTeX |
| 1. | H. Ceric, S. Holzer, A. Sheikholeslami, T. Ayalew, R. Wittmann, S. Selberherr: "VISTA Status Report June 2004"; (2004), 28 page(s) . BibTeX |